S-LM1MA142WAT3G LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. z• Fast trr, < 10 ns • Low CD, < 15 pF z z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LM1MA141WAT1G S-LM1MA141WAT1G LM1MA142WAT1G S-LM1MA142WAT1G SC-70/SOT-323 PACKAGE COMMON ANODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT DEVICE MARKING AND ORDERING INFORMATION Device Package Shipping LM1MA141WAT1G S-LM1MA141WAT1G SOT-323/SC-70 3000/Tape&Reel LM1MA141KWA3G S-LM1MA141WAT3G SOT-323/SC-70 10000/Tape&Reel LM1MA142WAT1G S-LM1MA142WAT1G SOT-323/SC-70 3000/Tape&Reel LM1MA142WAT3G S-LM1MA142WAT3G SOT-323/SC-70 10000/Tape&Reel 3 1 2 CASE 419–04, STYLE 4 SOT–323 /SC – 70 ANODE 3 DEVICE MARKING LM1MA141WAT1G = MN LM1MA142WAT1G=MO MAXIMUM RATINGS (TA = 25°C) Rating Symbol Reverse Voltage LM1MA141WAT1G VR LM1MA142WAT1G Peak Reverse Voltage LM1MA141WAT1G VRM Forward Current Peak Forward Current Peak Forward Surge Current LM1MA142WAT1G Single Dual Single Dual Single Dual 1 Value 40 80 40 IF IFM IFSM(1) 80 100 150 225 340 500 750 2 CATHODE Unit Vdc Marking Symbol Type No. 141WA142WA Symbol MN MO Vdc mAdc MNX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. mAdc mAdc THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Symbol PD TJ Max 150 150 Unit mW °C Storage Temperature Tstg –55 ~ +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Reverse Voltage Leakage Current LM1MA141WAT1G IR LM1MA142WAT1G Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery VF LM1MA141WAT1G VR LM1MA142WAT1G Time CD trr(2) Condition VR = 35 V Min — Max 0.1 Unit µAdc VR = 75 V — 0.1 IF = 100 mA IR = 100 µA — 40 80 1.2 — — Vdc Vdc VR=0, f=1.0 MHz — 15 pF IF=10mA,VR=6.0V RL=100Ω,Irr=0.1 IR — 10 ns 1. t = 1 SEC 2. trr Test Circuit Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LM1MA141WAT1G, S-LM1MA141WAT1G LM1MA142WAT1G, S-LM1MA142WAT1G RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t Irr = 0.1 IR 90% VR IR , REVERSE CURRENT (µA) TA = -40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 TA = 150°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 TA = 25°C 10 0 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.75 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 85°C IF = 10 mA VR = 6 V RL = 100 Ω tp = 2 µs tr = 0.35 ns 10 100 10 t 10% RL A trr IF 1.5 1.25 1.0 0.75 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance Rev.O 2/3 50 LESHAN RADIO COMPANY, LTD. LM1MA141WAT1G, S-LM1MA141WAT1G LM1MA142WAT1G, S-LM1MA142WAT1G SC-70/SOT-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A DIM L A B C D G H J K L N S 3 B S 1 2 D G C 0.05 (0.002) J N INCHES MILLIMETERS MIN MA X MIN MA X 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 0.032 0.040 0.80 1.00 0.012 0.016 0.30 0.40 0.047 0.055 1.20 1.40 0.000 0.004 0.00 0.10 0.004 0.010 0.10 0.25 0.017 REF 0.425 REF 0.026 BSC 0.650 BSC 0.028 REF 0.700 REF 0.079 0.095 2.00 2.40 K H 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm Rev.O 3/3