LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low power surface mount applications, where board space is at a premium. • • • • • LDAN222T1G S-LDAN222T1G Fast trr Low C D Available in 8 mm Tape and Reel We declare that the material of product compliance with RoHS requirements. SC-89 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 ANODE 3 CATHODE 2 ANODE ORDERING INFORMATION Device Marking LDAN222T1G S-LDAN222T1G N9 LDAN222T3G S-LDAN222T3G N9 Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc IFM 300 mAdc IFSM(1) 2.0 Adc Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation Rating PD 150 mW Junction Temperature TJ 150 °C Tstg –55 to +150 °C Storage Temperature Range 1. t = 1 µS ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V — 0.1 µAdc Forward Voltage VF IF = 100 mA — 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 µA 80 — Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz — 3.5 pF trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR — 4.0 ns Reverse Recovery Time 2. trr Test Circuit on following page. Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDAN222T1G, S-LDAN222T1G Electrical characteristic curves Figure 1. Forward Voltage Figure 2. Reverse Current Figure 3. Diode Capacitance RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDAN222T1G, S-LDAN222T1G SC-89 Dimension Outline: NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. Soldering Footprint: Rev.O 3/3