LDAN222T1G

LESHAN RADIO COMPANY, LTD.
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC–89 package which is designed for low
power surface mount applications, where board space is at a premium.
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LDAN222T1G
S-LDAN222T1G
Fast trr
Low C D
Available in 8 mm Tape and Reel
We declare that the material of product compliance
with RoHS requirements.
SC-89
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
1
ANODE
3
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Marking
LDAN222T1G
S-LDAN222T1G
N9
LDAN222T3G
S-LDAN222T3G
N9
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
VR
80
Vdc
VRM
80
Vdc
IF
100
mAdc
IFM
300
mAdc
IFSM(1)
2.0
Adc
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Power Dissipation
Rating
PD
150
mW
Junction Temperature
TJ
150
°C
Tstg
–55 to +150
°C
Storage Temperature Range
1. t = 1 µS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
IR
VR = 70 V
—
0.1
µAdc
Forward Voltage
VF
IF = 100 mA
—
1.2
Vdc
Reverse Breakdown Voltage
VR
IR = 100 µA
80
—
Vdc
Diode Capacitance
CD
VR = 6.0 V, f = 1.0 MHz
—
3.5
pF
trr(2)
IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR
—
4.0
ns
Reverse Recovery Time
2. trr Test Circuit on following page.
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LDAN222T1G, S-LDAN222T1G
Electrical characteristic curves
Figure 1. Forward Voltage
Figure 2. Reverse Current
Figure 3. Diode Capacitance
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LDAN222T1G, S-LDAN222T1G
SC-89
Dimension Outline:
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
Soldering Footprint:
Rev.O 3/3