LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. z• Fast trr, < 3.0 ns • Low Crr , < 2.0 pF z LM1MA141KT1G LM1MA142KT1G SC–70/SOT–323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V–100 mA SURFACE MOUNT z We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION 3 Device Package Shipping LM1MA141KT1G SOT-323/SC-70 3000/Tape&Reel LM1MA141KT3G SOT-323/SC-70 10000/Tape&Reel LM1MA142KT1G SOT-323/SC-70 3000/Tape&Reel LM1MA142KT3G SOT-323/SC-70 10000/Tape&Reel 1 2 SOT–323 /SC – 70 CATHODE 3 DEVICE MARKING LM1MA141KT1G = MH LM1MA142KT1G=MI MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage LM1MA141KT1G LM1MA142KT1G Peak Reverse Voltage L M1MA141KT1G L M1MA142KT1G 1 Symbol VR Forward Current Peak Forward Current Peak Forward Surge Current Value 40 80 40 VRM 80 100 225 500 IF IFM IFSM(1) Unit Vdc Vdc mAdc mAdc mAdc 2 NO CONNECTION ANODE Marking Symbol Type No. 141K 142K Symbol MH MI MHX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD Max 150 Unit mW TJ Tstg 150 –55 ~ +150 °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current LM1MA141KT1G LM1MA142KT1G Forward Voltage Reverse Breakdown Voltage LM1MA141KT1G Symbol Condition Min Max Unit IR VR = 35 V VR = 75 V IF = 100 mA IR = 100 µA — — — 40 0.1 0.1 1.2 — µAdc 80 — — — 2.0 3.0 VF VR L M1MA142KT1G Diode Capacitance Reverse Recovery Time CD trr(2) VR=0, f=1.0 MHz IF=10mA,VR=6.0V RL=100Ω,Irr=0.1 IR Vdc Vdc pF ns 1. t = 1 SEC 2. trr Test Circuit 1/3 LESHAN RADIO COMPANY, LTD. LM1MA141KT1G LM1MA142KT1G INPUT PULSE OUTPUT PULSE IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) RECOVERY TIME EQUIVALENT TEST CIRCUIT VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current C D, DIODE CAPACITANCE (pF) Figure 1. Forward Voltage VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance 2/3 LESHAN RADIO COMPANY, LTD. LM1MA141KT1G LM1MA142KT1G SC-70/SOT-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A DIM L A B C D G H J K L N S 3 B S 1 2 D G C 0.05 (0.002) J N INCHES MILLIMETERS MIN MA X MIN MA X 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 0.032 0.040 0.80 1.00 0.012 0.016 0.30 0.40 0.047 0.055 1.20 1.40 0.000 0.004 0.00 0.10 0.004 0.010 0.10 0.25 0.017 REF 0.425 REF 0.026 BSC 0.650 BSC 0.028 REF 0.700 REF 0.079 0.095 2.00 2.40 K H 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm 3/3