General Purpose Transistors LMBT3906WT1G S

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
LMBT3906WT1G
●FEATURES
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
S-LMBT3906WT1G
3
1
2
●DEVICE MARKING AND ORDERING INFORMATION
Shipping
Device
Marking
3000/Tape&Reel
LMBT3906WT1G
2A
10000/Tape&Reel
LMBT3906WT3G
2A
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Symbol
VCEO
Collector–Emitter Voltage
VCBO
Collector–Base Voltage
VEBO
Emitter–Base Voltage
IC
Collector Current — Continuous
●THERMAL CHARACTERISTICS
Total Device Dissipation,
(Note 1) @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient
Junction and Storage temperature
SC–70
3
COLLECT OR
Limits
–40
–40
–5
–200
Unit
Vdc
Vdc
Vdc
mAdc
PD
150
mW
RΘJA
833
℃/W
TJ,Tstg
−55∼+150
℃
1
B ASE
2
EMIT T ER
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
OFF CHARACTERISTICS
Characteristic
Symbol
Collector–Emitter Breakdown Voltage(Note 2) VBR(CEO)
(IC = –1.0 mAdc, I B = 0)
VBR(CBO)
Collector–Base Breakdown Voltage
(I C = –10 μAdc, I E = 0)
Emitter–Base Breakdown Voltage
VBR(EBO)
(I E = –10 μAdc, I C = 0)
Collector Cutoff Current
ICEX
( V CE = –30 Vdc, V EB =– 3.0Vdc)
Base Cutoff Current
IBL
(V CE = –30 Vdc, V EB = –3.0Vdc)
Min.
Typ.
Max.
–40
–
–
–40
–
–
Unit
V
V
V
–5
–
–
nA
–
–
–50
–
–
–50
nA
2.Pulse Test: Pulse Width≦300 μs; Duty Cycle≦2.0%.
June,2015
Rev.A 1/6
LESHAN RADIO COMPANY, LTD.
LMBT3906WT1G,S-LMBT3906WT1G
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)(Continued)
ON CHARACTERISTICS (Note 1.)
Characteristic
Symbol
DC Current Gain
hFE
(I C = –0.1 mAdc, V CE = –1.0 Vdc)
(I C = –1.0 mAdc, V CE = –1.0 Vdc)
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –50 mAdc, V CE =– 1.0 Vdc)
(I C = –100 mAdc, V CE =– 1.0 Vdc)
Collector–Emitter Saturation Voltage(3)
VCE(sat)
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50mAdc, I B =– 5.0 mAdc)
Base–Emitter Saturation Voltage
VBE(sat)
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50mAdc, I B =– 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
fT
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
Output Capacitance
Cobo
(V CB = –5.0 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
Cibo
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
hie
(V CE=– 10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
hre
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V CE=–10 Vdc, I C =– 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V CE=–10 Vdc, I C =–1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE=–5V, IC=–100μA, RS=1.0k Ω , f =1.0kHz)
SWITCHING CHARACTERISTICS
Delay Time
(V CC = –3.0 Vdc, V BE=
Rise Time
0.5 Vdc,I C = –10 mAdc, I
B1 =– 1.0 mAdc)
Storage Time
(V CC =– 3.0 Vdc, I C = –
10 mAdc,I B1 = I B2 = –1.0
Fall Time
mAdc)
Min.
Typ.
Max.
60
80
100
60
30
–
–
–
–
–
–
–
300
–
–
Unit
V
–
–
–
–
–0.25
–0.4
–0.65
–
–
–
–0.85
–0.95
V
MHz
250
–
–
–
–
4.5
–
–
10
pF
pF
kΩ
2
–
12
X 10 –4
0.1
–
10
100
–
400
hfe
μmhos
hoe
3
–
60
NF
dB
–
–
4
td
tr
–
–
–
–
35
35
ts
–
–
225
tf
–
–
75
ns
3.Pulse Test: Pulse Width≦300 μs; Duty Cycle≦2.0%.
June,2015
Rev.A 2/6
LESHAN RADIO COMPANY, LTD.
LMBT3906WT1G,S-LMBT3906WT1G
Electrical Characteristics Curves
1000
C,Capacitance(pF)
HFE, DC Current Gain
10
100
10
1
1
0.1
0.1
1
10
VR, Reverse Voltage (V)
Cobo
Cibo
Figure 1. Capacitance
100
-55℃
25℃
Figure 3. DC Current Gain
June,2015
150℃
1
VCE, Collector Emitter Voltage (V)
HFE, DC Current Gain
VCE=1V
0.01
0.1
IC, Collector Current (A)
10
Figure 2. Current Gain
1000
10
0.001
1
IC, Collector Current (mA)
1
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
IB, Base Current (mA)
IC=-1mA
IC=-10mA
IC=-30mA
IC=-100mA
10
Figure 4. Collector Saturation Region
Rev.A 3/6
LESHAN RADIO COMPANY, LTD.
LMBT3906WT1G,S-LMBT3906WT1G
Electrical Characteristics Curves
0.45
VBEsat, Base-Emitter Saturation
Voltage (V)
VCEsat, Collector-Emitter
Saturation Voltage (V)
0.50
IC/IB=10
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
IC, Collecotr Current (A)
-55℃
25℃
150℃
VBEon, Base-Emitter Voltage (V)
Figure 5. Collector Emitter Saturation Voltage vs.
Collector Current
1.4
IC/IB=10
1.2
1.0
0.8
0.6
0.4
0.2
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
IC, Collector Current (A)
-55℃
25℃
150℃
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
1.4
VCE=1V
1.2
1.0
0.8
0.6
0.4
0.2
1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
IC, Collector Current (A)
-55℃
25℃
150℃
Figure 7. Base Emitter Voltage vs. Collector Current
June,2015
Rev.A 4/6
LESHAN RADIO COMPANY, LTD.
LMBT3906WT1G,S-LMBT3906WT1G
3V
3V
+9.1 V
< 1 ns
275
275
< 1 ns
10 k
10 k
0
CS < 4 pF*
+10.6 V
300 ns
1N916
10 < t1 < 500 ms
DUTY CYCLE = 2%
DUTY CYCLE = 2%
t1
CS < 4 pF*
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 8. Delay and Rise Time Equivalent Test
June,2015
Figure 9. Storage and Fall Time Equivalent Test
Rev.A 5/6
LESHAN RADIO COMPANY, LTD.
LMBT3906WT1G,S-LMBT3906WT1G
SC-70
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
DIM
L
A
B
C
D
G
H
J
K
L
N
S
3
B
S
1
2
D
G
C
0.05 (0.002)
J
N
INCHES MILLIMETERS
MIN
MA X
MIN
MA X
0.071 0.087
1.80
2.20
0.045 0.053
1.15
1.35
0.032 0.040
0.80
1.00
0.012 0.016
0.30
0.40
0.047 0.055
1.20
1.40
0.000 0.004
0.00
0.10
0.004 0.010
0.10
0.25
0.017 REF
0.425 REF
0.026 BSC
0.650 BSC
0.028 REF
0.700 REF
0.079 0.095
2.00
2.40
K
H
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
June,2015
Rev.A 6/6