LESHAN RADIO COMPANY, LTD. DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site LMBT4401DW1T1G S-LMBT4401DW1T1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 6 5 Device 4 Marking Shipping 2X 3000/Tape&Reel 2X 10000/Tape&Reel LMBT4401DW1T1G S-LMBT4401DW1T1G LMBT4401DW1T3G S-LMBT4401DW1T3G 1 2 3 MAXIMUM RATINGS SOT-363/SC-88 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc Collector Current — Continuous EBO IC Total Package Dissipation(1) TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 5 4 C1 B2 E2 Q2 Q1 THERMAL CHARACTERISTICS Characteristic 6 Symbol Max Unit PD 150 mW RJA 833 °C/W TJ, Tstg –55 to +150 °C E1 B1 C2 1 2 3 DEVICE MARKING LMBT4401DW1T1G = 2X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max 40 — 60 — 6.0 — — 0.1 — 0.1 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (2) (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 0.1 mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 0.1 mAdc, I C = 0) Base Cutoff Current (V CE = 35 Vdc, V EB = 0.4 Vdc) Collector Cutoff Current (V CE = 35 Vdc, V EB = 0.4 Vdc) V (BR)CEO Vdc V (BR)CBO V Vdc Vdc (BR)EBO µAdc I BEV µAdc I CEX 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. 2. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LMBT4401DW1T1G ;S-LMBT4401DW1T1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS ( 2 ) DC Current Gain (I C = 0.1 mAdc, V CE = 1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 150 mAdc, V CE = 1.0 Vdc) (I C = 500 mAdc, V CE = 2.0 Vdc) Collector–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) Base–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) hFE –– 20 40 80 100 40 –– –– –– 300 –– –– –– 0.4 0.75 0.75 –– 0.95 1.2 250 –– –– 6.5 –– 30 1.0 15 VCE(sat) Vdc V BE(sat) Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 20 mAdc, V CE= 10Vdc, f = 100 MHz) Collector–Base Capacitance (V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) Emitter–Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) fT MHz C cb pF C eb pF h ie kΩ h re X 10 0.1 8.0 40 500 1.0 30 h fe –4 — µmhos h oe SWITCHING CHARACTERISTICS Delay Time (V CC = 30 Vdc, V EB = 2.0 Vdc td — 15 Rise Time I C = 150 mAdc, I B1 = 15 mAdc) tr — 20 ns Storage Time (V CC = 30 Vdc, I C = 150 mAdc ts — 225 ns Fall Time I B1 = I B2 = 15 mAdc) tf — 30 2. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V + 16 V 1.0 to 100µs, DUTY CYCLE = 2% 200 Ω + 16 V 1.0 to 100µs, DUTY CYCLE = 2% 1.0 kΩ 1.0 kΩ 0 0 C S*< 10 pF C S* < 10 pF – 2.0V 200Ω <2.0 ns –14 V < 20 ns 1N916 – 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time Rev.O 2/6 LESHAN RADIO COMPANY, LTD. LMBT4401DW1T1G ;S-LMBT4401DW1T1G TRANSIENT CHARACTERISTICS T J = 25°C T J = 100°C 30 10 7.0 20 3.0 QT 2.0 Q, CHARGE (pC) CAPACITANCE (pF) C obo 10 7.0 5.0 C cb 3.0 1.0 0.7 0.5 0.3 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 300 500 100 100 I C /I B = 10 70 70 V CC= 30V I C/I B =10 tr 50 50 t , RISE TIME (ns) t r @V CC=30V t r @V CC=10V 30 t d@V EB=2.0V t d@V EB=0V 20 10 tf 30 20 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise and Fall Time 300 300 500 100 t s’ = t s – 1/8 t f I B1 = I B2 I C/I B = 10 to 20 70 50 t f , FALL TIME (ns) 200 t f , STORAGE TIME (ns) QA 0.2 0.1 2.0 t , TIME (ns) V CC = 30 V I C / I B = 10 5.0 100 70 50 I C /I B = 20 V CC = 30 V I B1 = I B2 30 I C /I B = 10 20 10 7.0 30 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 500 Rev.O 3/6 LESHAN RADIO COMPANY, LTD. LMBT4401DW1T1G ;S-LMBT4401DW1T1G SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE V CE = 10 Vdc, T A = 25°C Bandwidth = 1.0 Hz 10 10 I C = 1.0 mA, R S = 150 Ω R S = OPTIMUM RS = SOURCE RS = RESISTANCE I C = 50 µA, R S = 4.0 kΩ 6.0 4.0 2.0 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1.0 kHz I C = 500 µA, R S = 200 Ω I C = 100 µA, R S = 2.0 kΩ 8.0 0 I C = 50 µA I C = 100 µA I C = 500 µA I C = 1.0 mA 6.0 4.0 2.0 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 500 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (kΩ) Figure 9. Frequency Effects Figure 10. Source Resistance Effects 100k h PARAMETERS (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the LMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 300 h ie, INPUT IMPEDANCE (kΩ) 50 h fe, CURRENT GAIN 200 100 LMBT4401LT1 UNIT 1 LMBT4401LT1 UNIT 2 70 50 30 20 20 10 5.0 2.0 1.0 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Input Impedance 10 7.0 5.0 LMBT4401LT1 UNIT 1 LMBT4401LT1 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 h oe , OUTPUT ADMITTANCE ( µmhos) 0.1 h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) LMBT4401LT1 UNIT 1 LMBT4401LT1 UNIT 2 10 100 50 LMBT4401LT1 UNIT 1 LMBT4401LT1 UNIT 2 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance Rev.O 4/6 10 LESHAN RADIO COMPANY, LTD. LMBT4401DW1T1G ;S-LMBT4401DW1T1G STATIC CHARACTERISTICS V CE= 1.0 V V CE=10 V 2.0 T J = 125°C 1.0 25°C 0.7 0.5 –55°C 0.3 h FE , NORMALIZED CURRENT GAIN 3.0 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 T J = 25°C 0.8 0.6 10 mA I C=1.0 mA 100mA 500mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 10 +0.5 T J = 25°C V BE(sat) @ I C /I B =10 0.6 V BE @ V CE =1.0 V 0.4 0.2 θ VC for V CE(sat) 0 COEFFICIENT (mV/ °C) V, VOLTAGE ( VOLTS ) 0.8 V CE(sat) @ I C /I B =10 0 – 0.5 –1.0 –1.5 θ VB for V –2.0 BE – 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. “On” Voltages Figure 18. Temperature Coefficients 500 Rev.O 5/6 LESHAN RADIO COMPANY, LTD. LMBT4401DW1T1G ;S-LMBT4401DW1T1G SC-88/SOT-363 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G DIM 6 5 4 - B- S 1 2 3 0.2 (0.008) M B M D6PL N J A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 K H 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm Rev.O 6/6