LESD3Z5.0CMT1G

LESHAN RADIO COMPANY, LTD.
Transient Voltage Suppressors for ESD Protection
LESD3Z5.0CMT1G
S-LESD3Z5.0CMT1G
General Description
The LESD3Z5.0CMT1G is designed to protect voltage
sensitive components from ESD and transient voltage
events. Excellent clamping capability, low leakage, and
1
fast response time, make these parts ideal for ESD
protection on designs where board space is at a
premium.
2
Applications
•
•
•
•
Cellular phones
Portable devices
Digital cameras
Power supplies
•
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SOD– 323
Features
•
•
•
Small Body Outline Dimensions
Low Body Height
Peak Power up to 200 Watts @ 8 x 20 _s
Pulse
•
•
•
Low Leakage current
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human
Body Model
•
•
IEC61000−4−2 Level 4 ESD Protection
IEC61000−4−4 Level 4 EFT Protection
ORDERING INFORMATION
Device
LESD3Z5.0CMT1G
S-LESD3Z5.0CMT1G
Marking
3M
Shipping
3000/Tape & Reel
Absolute Ratings (Tamb=25°C )
Symbol
Parameter
Value
Units
PPP
Peak Pulse Power (tp = 8/20μs)
200
W
TL
Maximum lead temperature for soldering during 10s
260
°C
Tstg
Storage Temperature Range
-55 to +155
°C
Top
Operating Temperature Range
-40 to +125
°C
Tj
Maximum junction temperature
150
°C
±15
±8
KV
IEC61000-4-2 (ESD)
air discharge
contact discharge
IEC61000-4-4 (EFT)
ESD Voltage
Per Human Body Model
40
A
16
KV
Rev. O 1/4
LESHAN RADIO COMPANY, LTD.
LESD3Z5.0CMT1G,S-LESD3Z5.0CMT1G
Electrical Parameter
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
IT
VBR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
VRWM
Test Current
Breakdown Voltage @ IT
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA
Device
LESD3Z5.0CMT1G
VRWM
(V)
IR(uA)
VBR (V)@ IT
IT
VC (V)
VC (V)
IPP
PPK
C
@ VRWM
(Note 1)
@ IPP=5 A*
@ Max IPP*
(A)*
(W)*
(pF)
Max
Max
Min
mA
Typ
Max
Max
Max
Typ
5.0
1
5.6
1.0
11.6
18.6
9.4
174
25
*Surge current waveform per Figure 1.
1. VBR is measured with a pluse test current IT at an ambient temperature of 25℃.
Fig1. Pulse Waveform
Rev. O 2/4
LESHAN RADIO COMPANY, LTD.
LESD3Z5.0CMT1G,S-LESD3Z5.0CMT1G
Fig2.Power Derating
Application Note
Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming
transient to a low enough level such that damage to the protected semiconductor is prevented.
Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel
protection elements, connected between the signal lines to ground. As the transient rises above the
operating voltage of the device, the TVS becomes a low impedance path diverting the transient
current to ground. The LESD3Z5.0CMT1G is the ideal boar d evel protection of ESD sensitive semiconductor
components.
The tiny SOD-323 package allows design flexibility in the design of high density boards where the
space saving is at a premium. This enables to shorten the routing and contributes to hardening
against ESD.
Rev. O 3/4
LESHAN RADIO COMPANY, LTD.
LESD3Z5.0CMT1G,S-LESD3Z5.0CMT1G
SOD-323
K
A
1
E
B
2
C
D
0.63
0.02''
0.83
1.60
0.063"
2.85
0.112''
H
J
0.033''
mm
inches
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
A
B
C
D
E
H
J
K
INCHES
MILLIMETERS
DIM
MIN
MAX
1.60
1.80
0.063
MIN
0.071
1.15
1.35
0.045
0.053
0.80
1.00
0.031
0.039
0.25
0.40
0.010
0.15 REF
MAX
0.016
0.006 REF
0.00
0.10
0.000
0.089
0.177
0.0035
2.30
2.70
0.091
0.004
0.0070
0.106
PIN: 1. CATHODE
2. ANODE
Rev. O 4/4