Transient Voltage Suppressors for ESD Protection ESDXXV92D-C Series Description SOD-923 The ESDXXV92D-C is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Feature Functional Diagram u Small body outline dimensions u Low body height u Peak power up to 150 watts @ 8×20 μs Pulse u Low leakage current u Response time is typically < 1 ns u IEC61000-4-2 Level 4 15 kV (air discharge) 8 kV(contact discharge) u MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) Applications u Cellular Phones u Portable Devices u Digital Cameras u Power Supplies Mechanical Characteristics Symbol Parameter Value Units PPP Peak Pulse Power (tp=8/20μs waveform) 150 W TL Maximum lead temperature for soldering during 10s 260 ºC TSTG Storage Temperature Range -55 to +155 ºC TOP Operating Temperature Range -40 to +125 ºC TJ Maximum junction temperature 150 ºC IEC61000-4-2 (ESD) ESD Voltage Air Discharge ±15 Contact Discharge ±8 Per Human Body Model 25 KV Per Machine Model 400 V UN Semiconductor Co., Ltd. Revision November 25, 2013 KV www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESDXXV92D-C Series Electrical Parameter Symbol Parameter Bi-directional IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage VRWM IPP @ IPP Working Peak Reverse Voltage Maximum Reverse leakage Current IT Test Current Breakdown Voltage IT VBR VRW R VC IR VBR I @ VRWM V IR IR IT @ IT VRW VBR VC R IPP Electrical Characteristics (Ratings at 25 ºC ambient temperature unless otherwise specified VF=0.9v at IF=10mA ) VBR C IR Part Number VRWM IR Vc Min. Typ. Max. Typ. 0V bias V V V mA V μA V pF ESD3.3V92D-C 5.1 6.0 6.8 1 3.3 1 14.1 25 ESD05V92D-C 5.6 6.7 7.8 1 5.0 1 18.6 15 *Surge current waveform per Figure 1. 1. VBR is measured with a pulse test current IT at an ambient temperature of 25 ºC. Fig1 Fig2 Power Derating Curve 120 tr 100 TEST WAVEFORM PARAMETERS tr=8μs td=20μs Peak Value IPP 80 % of Rated Power IPP - Peak Pulse Current - % of IPP PULSE WAVEFORM 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 Peak Pulse Power 8/20μs Average Power 0 30 25 50 75 100 125 150 Lead Temperature – TL (ºC) t - Time (μs) UN Semiconductor Co., Ltd. Revision November 25, 2013 220 200 180 160 140 120 100 80 60 40 20 0 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESDXXV92D-C Series Application Note Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient to a low enough level such that damage to the protected semiconductor is prevented. Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection elements, connected between the signal lines to ground. As the transient rises above the operating voltage of the device, the TVS becomes a low impedance path diverting the transient current to ground. The ESD9DXXCA is the ideal board evel protection of ESD sensitive semiconductor components. The tiny SOD-923 package allows design flexibility in the design of high density boards where the space saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD. SOD-923 Mechanical Data Soldering Footprint Dimensions: Millimeters Millimeters Dim Inches Min Nom Max Min Nom Max A 0.36 0.40 0.43 0.014 0.016 0.017 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.07 0.12 0.17 0.003 0.005 0.007 D 0.75 0.80 0.85 0.030 0.031 0.033 E 0.55 0.60 0.65 0.022 0.024 0.026 HE 0.95 1.00 1.05 0.037 0.039 0.041 L 0.05 0.10 0.15 0.002 0.004 0.006 UN Semiconductor Co., Ltd. Revision November 25, 2013 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.