LRB751BS

LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
LRB751BS-40T5G
S-LRB751BS-40T5G
zApplications
Low current rectification
zFeatures
Extremelysmall surface mounting type. (SOD882)
Low VF
High reliability.
We declare that the material of product
compliance with RoHS requirements.
1
2
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable.
zConstruction
Silicon epitaxial planar
SOD882
2
Anode
1
Cathode
DEVICE MARKING AND ORDERING INFORMATION
Device
LRB751BS-40T1G
S-LRB751BS-40T1G
LRB751BS-40T3G
S-LRB751BS-40T3G
LRB751BS-40T5G
S-LRB751BS-40T5G
Marking
Shipping
5
5000/Tape&Reel
5
8000/Tape&Reel
5
10000/Tape&Reel
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Limits
40
30
30
200
125
-40 to +125
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Unit
V
V
mA
mA
℃
℃
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VF
IR
Min.
-
Typ.
Ct
-
2
Max.
0.37
0.5
Unit
V
µA
-
pF
Conditions
IF=1mA
VR=30V
VR=1V , f=1MHz
Rev.A 1/3
LESHAN RADIO COMPANY, LTD.
LRB751BS-40T5G , S-LRB751BS-40T5G
zElectrical characteristic curves
Ta=75℃
10
0REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
100
Ta=125℃
1
Ta=25℃
Ta=-25℃
0.1
0.01
0.001
100000
Ta=125℃
10000
Ta=75℃
1000
Ta=25℃
100
Ta=-25℃
10
1
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0
5
10 15 20 25 30 35
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
40
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
1
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Rev.A 2/3
LESHAN RADIO COMPANY, LTD.
LRB751BS-40T5G , S-LRB751BS-40T5G
SOD882
DIMENSION OUTLINE:
Unit:mm
Rev.A 3/3