LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1 LRB551V-30T1 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1) Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF(VF=0.45V Typ. at 0.5A) 3) High reliability. 3) Pb-Free package is available. zConstruction Silicon epitaxial planar 1 2 CATHODE ANODE zDevice Marking and Ordering Information Device Marking Shipping LRB551V-30T1 D 3000/Tape&Reel D (Pb-Free) 3000/Tape&Reel LRB551V-30T1G zAbsolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current∗ Symbol Limits Unit VRM 30 V VR 20 V IO 0.5 A IFSM 2 A Junction temperature Tj 125 °C Storage temperature Tstg −40~+125 °C ∗ 60Hz for 1 zElectrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit VF1 − − 0.36 V IF = 100mA Conditions VF2 − − 0.54 V IF = 500mA IR − − 100 µA VR = 20V LRB551V-30T1-1/3 LESHAN RADIO COMPANY, LTD. LRB551V-30T1 zElectrical characteristic curves (Ta = 25°C) 10A 1000.0 100m 125˚C 10m 1A 1m 100.0 75˚C 125˚C 75˚C 10m 100µ 25˚C 25˚C 10.0 10µ −25˚C −25˚C 1m 1µ 100µ 0.0 Ct (pF) IR (A) IF (A) 100m 0.1 0.2 0.3 VF (V) 0.4 0.5 100n 0 1.0 10 20 30 VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics 40 0.0 10.0 20.0 30.0 40.0 VR (V) Fig.3 Capacitance between terminals characteristics Io (A) 1.0 0.5 0 25 50 75 100 125 150 Ta (°C) Fig.4 Derating curve LRB551V-30T1-2/3 LESHAN RADIO COMPANY, LTD. LRB551V-30T1 SOD-323 K A 1 E B 2 C D 0.63 0.02'' 0.83 1.60 0.063" 2.85 0.112'' H J 0.033'' mm inches NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS INCHES MILLIMETERS DIM MIN MAX A B C 1.60 1.80 0.063 MIN 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 D E H 0.25 0.40 0.010 0.00 0.10 0.000 J K 0.089 0.177 0.0035 2.30 2.70 0.091 0.15 REF MAX 0.016 0.006 REF 0.004 0.0070 0.106 PIN: 1. CATHODE 2. ANODE LRB551V-30T1-3/3