LRB520CS

LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
LRB520CS-30T5G
S-LRB520CS-30T5G
zApplications
Low current rectification
zFeatures
1
Extremelysmall surface mounting type. (SOD923)
Low IR.
High reliability.
We declare that the material of product
compliance with RoHS requirements.
2
SOD923
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
1
Cathode
zConstruction
Silicon epitaxial planar
2
Anode
Device Marking And Ordering Inf ormation
Device
LRB520CS-30T5G
Marking
Shipping
E
8000/Tape&Reel
Maximum Ratings (TA = 25°C)
Parameter
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
Symbol
VR
IO
IFSM
Tj
Ts t g
Limits
30
100
500
125
-40~+125
Unit
V
mA
mA
°C
°C
Electrical Characteristics ( TA = 25°C)
Parameter
Forward voltage
Symbol
VF
Min.
-
Typ
-
Max.
0.45
Unit
V
Conditions
I F=10mA
Forward voltage
VF
-
-
0.50
V
I F=20mA
Reverse current
IR
-
-
0.5
µA
VR=10V
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LRB520CS-30T5G , S-LRB520CS-30T5G
Electricalcharacteristiccurves(Ta=25OC)
1000000
Ta=75℃
10
1
Ta=-25℃
Ta=25℃
0.1
0.01
100000
Ta=75℃
10000
Ta=25℃
1000
100
Ta=-25℃
10
1
0.001
100
200
300
400
500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
30
0
340
330
800
700
600
500
400
300
AVE:100.5nA
200
18
17
16
15
14
13
12
100
11
0
10
320
VF DISPERSION MAP
AVE:15.94pF
IR DISPERSION MAP
Ct DISPERSION MAP
10
10
1cyc
Ifsm
15
8.3ms
10
AVE:3.90A
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
20
0
Ifsm
8.3ms 8.3ms
1cyc
5
Ifsm
t
5
0
0
1
10
1
100
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
0.1
1000
20
Ta=25℃
f=1MHz
VR=0V
n=10pcs
19
Ta=25℃
VR=10V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
350
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
900
REVERSE CURRENT:IR(nA)
0.02
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=10mA
1ms
IF=100mA
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
D=1/2
0.06
Sin(θ＝180)
DC
0.04
0.02
time
0.015
0.01
D=1/2
DC
0.005
Sin(θ＝180)
300us
10
0.001
FORWARD POWER
DISSIPATION:Pf(W)
0.08
REVERSE POWER
DISSIPATION:PR (W)
FORWARD VOLTAGE:VF(mV)
20
1000
Ta=25℃
VF=10mA
n=30pcs
AVE:338.8mV
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
370
360
10
1
0
600
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
100
Ta=125℃
f=1MHｚ
Ta=125℃
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
1000
0
1000
0
0
0.05
0.1
0.15
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.2
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LRB520CS-30T5G , S-LRB520CS-30T5G
Electricalcharacteristiccurves(Ta=25OC)
0.3
Io
0A
0V
t
0.2
DC
T
VR
D=t/T
VR=15V
Tj=150℃
D=1/2
0.1
Sin(θ＝180)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.3
0A
0V
0.2
DC
Io
t
T
VR
D=t/T
VR=15V
Tj=150℃
D=1/2
0.1
Sin(θ＝180)
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LRB520CS-30T5G , S-LRB520CS-30T5G
SOD -923
D
−X−
−Y−
E
1
b
DIM
A
b
c
D
E
HE
L
2
2X
0.08 (0.0032) X Y
A
c
MILLIMETERS
MIN NOM MAX
0.34 0.39 0.43
0.15 0.20 0.25
0.07 0.12 0.17
0.75 0.80 0.85
0.55 0.60 0.65
0.95 1.00 1.05
0.05 0.10 0.15
MIN
0.013
0.006
0.003
0.030
0.022
0.037
0.002
INCHES
NOM
0.015
0.008
0.005
0.031
0.024
0.039
0.004
MAX
0.017
0.010
0.007
0.033
0.026
0.041
0.006
L
HE
SOLDERING FOOTPRINT*
1.1
0.043
0.45
0.0177
0.50
0.0197
SCALE 10:1
mm Ǔ
ǒinches
Rev.O 4/4