WILLAS MMBT3906LT1

WILLAS
General Purpose Transistors
PNP Silicon
MMBT3906LT1
•
•
RoHS product for packing code suffix "G",
Halogen free product for packing code suffix "H"
Weight : 0.008g
.
ORDERING INFORMATION
Device
Marking
MMBT3906LT1
2A
Shipping
3000/Tape & Reel
SOT– 23
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
Value
Unit
V CEO
V CBO
V EBO
– 40
– 40
– 5.0
Vdc
Vdc
Vdc
IC
– 200
mAdc
3
COLLECTOR
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
T A =25 °C
Derate above 25°C
556
°C/W
PD
300
mW
2.4
R θJA
T J , T stg
417
–55 to +150
mW/°C
°C/W
°C
θJA
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
LMBT3906LT1G = 2A
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
– 40
—
– 40
—
– 5.0
—
—
– 50
—
– 50
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
V (BR)CEO
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Base Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
Collector Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Width <300 µs; Duty Cycle <2.0%.
Vdc
V (BR)CBO
Vdc
V (BR)EBO
Vdc
I BL
nAdc
I CEX
nAdc
WILLAS
MMBT3906LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
60
80
100
60
30
––
––
300
––
––
––
––
– 0.25
– 0.4
– 0.65
––
– 0.85
– 0.95
Unit
ON CHARACTERISTICS (2)
DC Current Gain
(I C = –0.1 mAdc, V CE = –1.0 Vdc)
(I C = –1.0 mAdc, V CE = –1.0 Vdc)
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –50 mAdc, V CE = –1.0 Vdc)
(I C = –100 mAdc, V CE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50 mAdc, I B = –5.0 mAdc)
Base–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50 mAdc, I B = –5.0 mAdc)
hFE
––
VCE(sat)
V
Vdc
Vdc
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz)
Output Capacitance
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Noise Figure
(V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz)
fT
MHz
250
––
––
4.5
––
10
2.0
12
C obo
C
pF
pF
ibo
h ie
kΩ
h re
X 10
0.1
10
100
400
3.0
60
––
4.0
h fe
—
µmhos
* h oe
NF
dB
SWITCHING CHARACTERISTICS
Delay Time
(V CC = – 3.0 Vdc, V BE = 0.5 Vdc,
td
—
35
Rise Time
I C = –10 mAdc, I B1 = –1.0 mAdc)
td
—
35
ns
Storage Time
(V CC = –3.0 Vdc, I C = –10 mAdc,
ts
—
225
ns
Fall Time
I B1 = I B2 = –1.0 mAdc)
tf
—
75
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
–4
WILLAS
MMBT3906LT1
3V
3V
+ 9.1 V
<1ns
275
275
<1 ns
+ 0.5 V
10 k
10 k
0
0
1N916
C S < 4.0 pF*
– 10.6 V
300ns
DUTY CYCLE = 2%
10 < t 1 < 500 µs
DUTY CYCLE = 2%
t1
C S < 4.0 pF*
10.9 V
*Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Figure 2. Storage and Fall Time
Equivalent Test Circuit
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T J = 25°C
T J = 125°C
5000
10.0
V CC = 40 V
I C / I B = 10
3000
7.0
2000
CAPACITANCE (pF)
Q, CHARGE (pC)
C obo
5.0
C ibo
3.0
2.0
1000
700
500
300
200
QT
QA
100
70
50
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
REVERSE BIAS (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
500
200
500
I C /I B = 10
300
200
V CC = 40 V
I B1 = I B2
300
200
70
t r @V CC=3.0V
TIME (ns)
50
15 V
30
20
40 V
2.0 V
10
7
t d@V OB=0V
t r , FALL TIME (ns)
I C /I B = 20
100
100
70
50
30
20
I C /I B = 10
10
7
5
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Fall Time
200
WILLAS
MMBT3906LT1
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V CE = – 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)
12
10
f = 1.0 kHz
I C = 0.5 mA
SOURCE RESISTANCE= 200 Ω
I C = 0.5 mA
8
SOURCE RESISTANCE =1.0kΩ
I C = 50 µA
6
4
SOURCE RESISTANCE= 500Ω
I C = 100 µA
2
I C = 1.0 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
14
SOURCE RESISTANCE= 200Ω
I C = 1.0 mA
0
10
8
6
4
I C = 50 µA
2
I C = 100 µA
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
R g, SOURCE RESISTANCE (kΩ)
Figure 7. Noise Figure
Figure 8. Noise Figure
40
100
h PARAMETERS
(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)
h oe , OUTPUT ADMITTANCE ( µmhos)
300
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
5
2
1
0.1
0.2
0.3
0.5
1.0
2.0
3.0
I C , COLLECTOR CURRENT (mA)
Figure 9. Current Gain
Figure 10. Output Admittance
10
h ie, INPUT IMPEDANCE (kΩ)
20
I C , COLLECTOR CURRENT (mA)
20
5.0
2.0
1.0
0.5
0.2
0.1
50
10
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
h re, VOLTAGE FEEDBACK RATIO (X 10 –4 )
h fe, DC CURRENT GAIN
200
100
5.0
10
5.0
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0
3.0
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
WILLAS
MMBT3906LT1
h FE , DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
T J = +125°C
1.0
V CE = 1.0 V
+25°C
0.7
–55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I C , COLLECTOR CURRENT (mA)
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.0
T J = 25°C
0.8
30 mA
10 mA
I C=1.0 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I B , BASE CURRENT (mA)
Figure 14. Collector Saturation Region
1.0
1.2
T J = 25°C
V BE(sat) @ I C /I B =10
0.5
COEFFICIENT (mV/ °C)
1.0
V, VOLTAGE ( VOLTS )
V BE @ V CE =1.0 V
0.8
0.6
0.4
V CE(sat) @ I C /I B =10
0.2
θ VC for V CE(sat)
+25°C TO +125°C
0
–55°C TO +25°C
– 0.5
+25°C TO +125°C
–1.0
–55°C TO +25°C
θ VB for V BE(sat)
–1.5
–2.0
0
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80
100
120
140
160
180
C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
200
WILLAS
MMBT3906LT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60