WILLAS General Purpose Transistors PNP Silicon MMBT3906LT1 • • RoHS product for packing code suffix "G", Halogen free product for packing code suffix "H" Weight : 0.008g . ORDERING INFORMATION Device Marking MMBT3906LT1 2A Shipping 3000/Tape & Reel SOT– 23 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol Value Unit V CEO V CBO V EBO – 40 – 40 – 5.0 Vdc Vdc Vdc IC – 200 mAdc 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) Symbol Max Unit PD 225 mW 1.8 mW/°C T A =25 °C Derate above 25°C 556 °C/W PD 300 mW 2.4 R θJA T J , T stg 417 –55 to +150 mW/°C °C/W °C θJA Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBT3906LT1G = 2A ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max – 40 — – 40 — – 5.0 — — – 50 — – 50 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) V (BR)CEO (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 µAdc, I C = 0) Base Cutoff Current (V CE = –30 Vdc, V EB = –3.0 Vdc) Collector Cutoff Current (V CE = –30 Vdc, V EB = –3.0 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Width <300 µs; Duty Cycle <2.0%. Vdc V (BR)CBO Vdc V (BR)EBO Vdc I BL nAdc I CEX nAdc WILLAS MMBT3906LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 60 80 100 60 30 –– –– 300 –– –– –– –– – 0.25 – 0.4 – 0.65 –– – 0.85 – 0.95 Unit ON CHARACTERISTICS (2) DC Current Gain (I C = –0.1 mAdc, V CE = –1.0 Vdc) (I C = –1.0 mAdc, V CE = –1.0 Vdc) (I C = –10 mAdc, V CE = –1.0 Vdc) (I C = –50 mAdc, V CE = –1.0 Vdc) (I C = –100 mAdc, V CE = –1.0 Vdc) Collector–Emitter Saturation Voltage (I C = –10 mAdc, I B = –1.0 mAdc) (I C = –50 mAdc, I B = –5.0 mAdc) Base–Emitter Saturation Voltage (I C = –10 mAdc, I B = –1.0 mAdc) (I C = –50 mAdc, I B = –5.0 mAdc) hFE –– VCE(sat) V Vdc Vdc BE(sat) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz) Output Capacitance (V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Noise Figure (V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz) fT MHz 250 –– –– 4.5 –– 10 2.0 12 C obo C pF pF ibo h ie kΩ h re X 10 0.1 10 100 400 3.0 60 –– 4.0 h fe — µmhos * h oe NF dB SWITCHING CHARACTERISTICS Delay Time (V CC = – 3.0 Vdc, V BE = 0.5 Vdc, td — 35 Rise Time I C = –10 mAdc, I B1 = –1.0 mAdc) td — 35 ns Storage Time (V CC = –3.0 Vdc, I C = –10 mAdc, ts — 225 ns Fall Time I B1 = I B2 = –1.0 mAdc) tf — 75 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. –4 WILLAS MMBT3906LT1 3V 3V + 9.1 V <1ns 275 275 <1 ns + 0.5 V 10 k 10 k 0 0 1N916 C S < 4.0 pF* – 10.6 V 300ns DUTY CYCLE = 2% 10 < t 1 < 500 µs DUTY CYCLE = 2% t1 C S < 4.0 pF* 10.9 V *Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = 25°C T J = 125°C 5000 10.0 V CC = 40 V I C / I B = 10 3000 7.0 2000 CAPACITANCE (pF) Q, CHARGE (pC) C obo 5.0 C ibo 3.0 2.0 1000 700 500 300 200 QT QA 100 70 50 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 500 200 500 I C /I B = 10 300 200 V CC = 40 V I B1 = I B2 300 200 70 t r @V CC=3.0V TIME (ns) 50 15 V 30 20 40 V 2.0 V 10 7 t d@V OB=0V t r , FALL TIME (ns) I C /I B = 20 100 100 70 50 30 20 I C /I B = 10 10 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Fall Time 200 WILLAS MMBT3906LT1 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE = – 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz) 12 10 f = 1.0 kHz I C = 0.5 mA SOURCE RESISTANCE= 200 Ω I C = 0.5 mA 8 SOURCE RESISTANCE =1.0kΩ I C = 50 µA 6 4 SOURCE RESISTANCE= 500Ω I C = 100 µA 2 I C = 1.0 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE= 200Ω I C = 1.0 mA 0 10 8 6 4 I C = 50 µA 2 I C = 100 µA 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) R g, SOURCE RESISTANCE (kΩ) Figure 7. Noise Figure Figure 8. Noise Figure 40 100 h PARAMETERS (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) h oe , OUTPUT ADMITTANCE ( µmhos) 300 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 5 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mA) Figure 9. Current Gain Figure 10. Output Admittance 10 h ie, INPUT IMPEDANCE (kΩ) 20 I C , COLLECTOR CURRENT (mA) 20 5.0 2.0 1.0 0.5 0.2 0.1 50 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) h fe, DC CURRENT GAIN 200 100 5.0 10 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio WILLAS MMBT3906LT1 h FE , DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 T J = +125°C 1.0 V CE = 1.0 V +25°C 0.7 –55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 T J = 25°C 0.8 30 mA 10 mA I C=1.0 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B , BASE CURRENT (mA) Figure 14. Collector Saturation Region 1.0 1.2 T J = 25°C V BE(sat) @ I C /I B =10 0.5 COEFFICIENT (mV/ °C) 1.0 V, VOLTAGE ( VOLTS ) V BE @ V CE =1.0 V 0.8 0.6 0.4 V CE(sat) @ I C /I B =10 0.2 θ VC for V CE(sat) +25°C TO +125°C 0 –55°C TO +25°C – 0.5 +25°C TO +125°C –1.0 –55°C TO +25°C θ VB for V BE(sat) –1.5 –2.0 0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 15. “ON” Voltages Figure 16. Temperature Coefficients 200 WILLAS MMBT3906LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60