CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features • • • • VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector 1 1 2 3 3 Applications Voltage-resonance type home appliances (Microwave ovens, IH cooking devices, IH rice-cookers) Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulse) Emitter current Maximum power dissipation Junction temperature Storage temperature Rev.1.00, Aug.20.2004, page 1 of 5 Symbol VCES VGES VGEM IC ICM Ratings 900 ±20 ±30 60 120 Unit V V V A A IE PC Tj Tstg 40 200 – 40 to +150 – 40 to +150 A W °C °C Conditions VGE = 0 V VCE = 0 V VCE = 0 V Tc = 25°C CT60AM-18C Electrical Characteristics (Unless otherwise specified, Tj = 25°C) Parameter Symbol V(BR)CES Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Tail loss Tail current Emitter-collector voltage Diode reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Notes: 1 Selected value Rev.1.00, Aug.20.2004, page 2 of 5 Min. 1000not Typ. — Max. — Unit V Test conditions IC = 1 mA, VGE = 0 V VCE = 900 V, VGE = 0 V VGE = ±20 V, VCE = 0 V IC = 6 mA, VCE = 10 V IC = 60 A, VCE = 15 V VCE = 25 V, VGE = 0 V, f = 1MHz e1 ICES IGES VGE(th) VCE(sat) Ciss Coss Crss td(on) tr td(off) tf Etail — — 2.0 — — — — — — — — — — — 4.0 2.0 5000 125 85 0.05 0.12 0.30 0.25 0.6 1 ±0.5 6.0 2.7 — — — — — — — 1.0 mA µA V V pF pF pF µs µs µs µs mJ/pls Itail — 6 12 A VEC trr Rth(j-c) Rth(j-c) — — — — — 0.5 — — 3 2 0.625 4.0 V µs °C/W °C/W IC = 60 A, Resistive loads, VCC = 300 V, VGE = 15 V, RG = 10 Ω ICP = 60 A, Tj = 125°C, dv/dt = 200 V/µs, Single-device voltage resonance circuit IE = 60 A, VGE = 0 V IE = 60 A, di/dt = 20 A/µs Junction to case Junction to case CT60AM-18C Collector Current vs. Collector-Emitter Voltage (Typical) 200 Tc = 25°C Pulse Test Collector Current IC (A) PC = 200W 160 15V 120 80 10V 9V VGE = 20V 8V 40 0 7V 0 1 2 3 4 5 Collector-Emitter Saturation Voltage VCE(sat) (V) Performance Curves 3 IC = 120A 2 60A 30A 15A 1 0 Tc = 25°C Pulse Test 0 4 8 12 16 20 Collector Current vs. Gate-Emitter Voltage (Typical) Capacitance vs. Collector-Emitter Voltage (Typical) 160 Capacitance C (pF) Collector Current IC (A) 4 Gate-Emitter Voltage VGE (V) VCE = 5V Pulse Test 120 80 25°C 40 0 4 8 12 20 16 104 7 5 3 2 Cies 103 7 5 3 2 Coes 102 7 5 Tj = 25°C 3 Cres 2 VGE = 0V f = 1MHz 101 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Gate-Emitter Voltage VGE (V) Collector-Emitter Voltage VCE (V) Switching Characteristics (Typical) Switching Time vs. Gate Resistance (Typical) 103 7 5 3 td(off) 3 tf 2 tr 102 7 5 td(on) Tj = 25°C VCC = 300V VGE = 15V RG = 10Ω 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 Collector Current IC (A) Rev.1.00, Aug.20.2004, page 3 of 5 Switching Time (ns) Switching Time (ns) 5 Collector-Emitter Voltage VCE (V) 200 0 Collector-Emitter Saturation Voltage vs. Gate-Emitter Voltage (Typical) Tj = 25°C 2 V CC = 300V VGE = 15V 103 IC = 60A 7 5 3 2 tf td(off) tr 102 7 5 td(on) 3 0 10 2 3 5 7 101 2 3 5 7 102 Gate Resistance RG (Ω) CT60AM-18C Gate-Emitter Voltage vs. Gate Charge Characteristic (Typical) 80 IC = 60A Tj = 25°C Emitter Current IE (A) Gate-Emitter Voltage VGE (V) 20 16 12 VCE = 250V 400V 8 600V 4 0 Emitter Current vs. Emitter-Collector Voltage (Typical) 0 80 160 240 64 48 32 7.0 VCE = 400V IC = 20mA 6.0 5.0 4.0 3.0 0 50 100 150 Transient Thermal Impedance Zth( j – c ) (°C/W) Junction Temperature Tj (°C) IGBT Transient Thermal Impedance Characteristics 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single pulse 7 5 3 2 2 10–1 10–1 7 5 7 5 3 3 2 2 10–2 10–2 5 710–5 2 3 5 710–4 2 3 5 710–3 Pulse Width tw (S) Rev.1.00, Aug.20.2004, page 4 of 5 Collector-Emitter Breakdown Voltage V(BR)CES (t°C) Collector-Emitter Breakdown Voltage V(BR)CES (25°C) Gate-Emitter Threshold Voltage vs. Junction Temperature (Typical) –50 0 0.8 1.6 2.4 3.2 4.0 Emitter-Collector Voltage VEC (V) Transient Thermal Impedance Zth( j – c ) (°C/W) Gate-Emitter Threshold Voltage VGE(th) (V) Gate Charge Qg (nC) 2.0 Tc = 25°C 16 0 400 320 VGE = 0V Pulse Test Collector-Emitter Breakdown Voltage vs. Junction Temperature (Typical) 1.4 VGE = 0V IC = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 Junction Temperature Tj (°C) Diode Transient Thermal Impedance Characteristics 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single pulse 5 3 2 100 7 5 5 3 2 3 2 10–1 10–1 7 5 7 5 3 2 3 2 10–2 10–2 5 710–5 2 3 5 710–4 2 3 5 710–3 Pulse Width tw (S) CT60AM-18C Package Dimensions TO-3PL EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 9.8 Cu alloy 20.5 max 5 6 2 2.5 26 φ 3.2 20.8 ± 0.8 2 1 ±0.2 0.6 Symbol 3 5.45 5.45 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE 4.0 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 25 Type name Lead form Plastic Magazine (Tube) 25 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 5 of 5 Standard order code example CT60AM-18C CT60AM-18C-AD Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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