RENESAS CT60AM-18C

CT60AM-18C
Insulated Gate Bipolar Transistor
REJ03G0287-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
VCES : 900 V
IC : 60 A
Integrated fast-recovery diode
For voltage-resonance
Appearance Figure
TO-3PL
2, 4
4
1 : Gate
2 : Collector
3 : Emitter
4 : Collector
1
1
2
3
3
Applications
Voltage-resonance type home appliances (Microwave ovens, IH cooking devices, IH rice-cookers)
Maximum Ratings
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulse)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
Rev.1.00, Aug.20.2004, page 1 of 5
Symbol
VCES
VGES
VGEM
IC
ICM
Ratings
900
±20
±30
60
120
Unit
V
V
V
A
A
IE
PC
Tj
Tstg
40
200
– 40 to +150
– 40 to +150
A
W
°C
°C
Conditions
VGE = 0 V
VCE = 0 V
VCE = 0 V
Tc = 25°C
CT60AM-18C
Electrical Characteristics
(Unless otherwise specified, Tj = 25°C)
Parameter
Symbol
V(BR)CES
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance (IGBT)
Thermal resistance (Diode)
Notes: 1 Selected value
Rev.1.00, Aug.20.2004, page 2 of 5
Min.
1000not
Typ.
—
Max.
—
Unit
V
Test conditions
IC = 1 mA, VGE = 0 V
VCE = 900 V, VGE = 0 V
VGE = ±20 V, VCE = 0 V
IC = 6 mA, VCE = 10 V
IC = 60 A, VCE = 15 V
VCE = 25 V, VGE = 0 V,
f = 1MHz
e1
ICES
IGES
VGE(th)
VCE(sat)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Etail
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
4.0
2.0
5000
125
85
0.05
0.12
0.30
0.25
0.6
1
±0.5
6.0
2.7
—
—
—
—
—
—
—
1.0
mA
µA
V
V
pF
pF
pF
µs
µs
µs
µs
mJ/pls
Itail
—
6
12
A
VEC
trr
Rth(j-c)
Rth(j-c)
—
—
—
—
—
0.5
—
—
3
2
0.625
4.0
V
µs
°C/W
°C/W
IC = 60 A, Resistive loads,
VCC = 300 V, VGE = 15 V,
RG = 10 Ω
ICP = 60 A, Tj = 125°C,
dv/dt = 200 V/µs,
Single-device voltage
resonance circuit
IE = 60 A, VGE = 0 V
IE = 60 A, di/dt = 20 A/µs
Junction to case
Junction to case
CT60AM-18C
Collector Current vs.
Collector-Emitter Voltage (Typical)
200
Tc = 25°C
Pulse Test
Collector Current IC (A)
PC = 200W
160
15V
120
80
10V
9V
VGE = 20V
8V
40
0
7V
0
1
2
3
4
5
Collector-Emitter Saturation Voltage VCE(sat) (V)
Performance Curves
3
IC = 120A
2
60A
30A
15A
1
0
Tc = 25°C
Pulse Test
0
4
8
12
16
20
Collector Current vs.
Gate-Emitter Voltage (Typical)
Capacitance vs.
Collector-Emitter Voltage (Typical)
160
Capacitance C (pF)
Collector Current IC (A)
4
Gate-Emitter Voltage VGE (V)
VCE = 5V
Pulse Test
120
80
25°C
40
0
4
8
12
20
16
104
7
5
3
2
Cies
103
7
5
3
2
Coes
102
7
5
Tj = 25°C
3
Cres
2 VGE = 0V
f = 1MHz
101
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
Gate-Emitter Voltage VGE (V)
Collector-Emitter Voltage VCE (V)
Switching Characteristics (Typical)
Switching Time vs.
Gate Resistance (Typical)
103
7
5
3
td(off)
3
tf
2
tr
102
7
5
td(on)
Tj = 25°C
VCC = 300V
VGE = 15V
RG = 10Ω
3
2
101 0
10
2 3
5 7 101
2 3
5 7 102
Collector Current IC (A)
Rev.1.00, Aug.20.2004, page 3 of 5
Switching Time (ns)
Switching Time (ns)
5
Collector-Emitter Voltage VCE (V)
200
0
Collector-Emitter Saturation Voltage vs.
Gate-Emitter Voltage (Typical)
Tj = 25°C
2 V
CC = 300V
VGE = 15V
103 IC = 60A
7
5
3
2
tf
td(off)
tr
102
7
5
td(on)
3 0
10
2 3
5 7 101
2 3
5 7 102
Gate Resistance RG (Ω)
CT60AM-18C
Gate-Emitter Voltage vs.
Gate Charge Characteristic (Typical)
80
IC = 60A
Tj = 25°C
Emitter Current IE (A)
Gate-Emitter Voltage VGE (V)
20
16
12
VCE = 250V
400V
8
600V
4
0
Emitter Current vs.
Emitter-Collector Voltage (Typical)
0
80
160
240
64
48
32
7.0
VCE = 400V
IC = 20mA
6.0
5.0
4.0
3.0
0
50
100
150
Transient Thermal Impedance Zth( j – c ) (°C/W)
Junction Temperature Tj (°C)
IGBT Transient Thermal
Impedance Characteristics
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
Single pulse
7
5
3
2
2
10–1
10–1
7
5
7
5
3
3
2
2
10–2
10–2
5 710–5 2 3 5 710–4 2 3 5 710–3
Pulse Width tw (S)
Rev.1.00, Aug.20.2004, page 4 of 5
Collector-Emitter Breakdown Voltage V(BR)CES (t°C)
Collector-Emitter Breakdown Voltage V(BR)CES (25°C)
Gate-Emitter Threshold Voltage vs.
Junction Temperature (Typical)
–50
0
0.8
1.6
2.4
3.2
4.0
Emitter-Collector Voltage VEC (V)
Transient Thermal Impedance Zth( j – c ) (°C/W)
Gate-Emitter Threshold Voltage VGE(th) (V)
Gate Charge Qg (nC)
2.0
Tc = 25°C
16
0
400
320
VGE = 0V
Pulse Test
Collector-Emitter Breakdown Voltage vs.
Junction Temperature (Typical)
1.4
VGE = 0V
IC = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
Junction Temperature Tj (°C)
Diode Transient Thermal
Impedance Characteristics
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 Single pulse
5
3
2
100
7
5
5
3
2
3
2
10–1
10–1
7
5
7
5
3
2
3
2
10–2
10–2
5 710–5 2 3 5 710–4 2 3 5 710–3
Pulse Width tw (S)
CT60AM-18C
Package Dimensions
TO-3PL
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
9.8
Cu alloy
20.5 max
5
6
2
2.5
26
φ 3.2
20.8 ± 0.8
2
1 ±0.2
0.6
Symbol
3
5.45
5.45
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
4.0
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Plastic Magazine (Tube)
25 Type name
Lead form
Plastic Magazine (Tube)
25 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 5 of 5
Standard order
code example
CT60AM-18C
CT60AM-18C-AD
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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