CY25BAJ-8F Nch IGBT for Strobe Flash REJ03G0285-0200 Rev.2.00 May 23, 2005 Features • Small surface mount package (TSSOP-8) Terminal Pb free: PTSP0008JA-A (8P2J-A) Complete Pb free: PTSP0008JB-B (TTP-8DV) • VDSS : 400 V • ICM : 150 A • Drive voltage : 4 V Outline TSSOP-8 4 5 3 2 1 8 1,2,3,4 : Collector 5,6,7 : Emitter 8 : Gate 4 1 5 6 7 8 Applications Strobe flash for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Rev.2.00, May 23,2005, Symbol VCES VGES VGEM ICM Ratings 400 ±6 ±8 150 Unit V V V A Tj Tstg – 40 to +150 – 40 to +150 °C °C page 1 of 3 Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curve) CY25BAJ-8F Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Min. 450 — — 0.5 — Typ. — — — 0.7 4.0 Max. — 10 ±10 1.5 6.0 Unit V µA µA V V Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±6 V, VCE = 0 V VCE = 10 V, IC = 1 mA VCE = 4 V, IC = 150 A Performance Curves Maximum Collector Current vs. Gate-Emitter Voltage Pulse Collector Current ICM (A) 200 Tc = 70°C CM = 400 µF RG = 30 Ω 150 100 50 0 0 2 4 6 8 Gate-Emitter Voltage VGE (V) Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 0.1 A. (In general, when RG (off) = 30 Ω, it is satisfied.) 3. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 150 A : full luminescence condition) of main capacitor (CM = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V. Order Code Lead form Standard packing Quantity Standard order code Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2) +3 Note: Please confirm the specification about the shipping in detail. Rev.2.00, May 23,2005, page 2 of 3 Standard order code example CY25BAJ-8F-T13 CY25BAJ-8F Package Dimensions JEITA Package Code RENESAS Code P-TSSOP8-4.4x3-0.65 PTSP0008JA-A MASS[Typ.] 8P2J-A 0.04g HE 5 *1 E 8 Package Name F A2 1 A1 4 Index mark NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. c *2 D L A Reference Symbol Dimension in Millimeters Min Nom Max D 2.9 3.0 3.1 E 4.3 4.4 4.5 1.0 A2 e A y *3 bp Detail F x 1.2 A1 0 0.1 0.2 bp 0.2 0.25 0.32 c 0.14 0.15 0.2 6.4 6.6 0° HE 6.2 e 8° 0.65 x 0.13 y L JEITA Package Code RENESAS Code Package Name P-TSSOP8-4.4 × 3-0.65 PTSP0008JB-B TTP-8DV 0.10 0.3 0.5 0.7 MASS[Typ.] 0.034g F *1 D 8 5 c Index mark HE *2 E bp 1 4 Z Terminal cross section *3 b p (Ni/Pd/Au plating) x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Symbol L1 Dimension in Millimeters Min Nom Max D 3.00 3.30 E 4.40 A2 A1 0.03 0.07 0.10 0.15 0.20 0.25 0.10 0.15 0.20 1.10 A A bp A1 b1 c L c1 0° y HE Detail F 6.20 e 8° 6.40 0.65 x 0.10 Z 0.805 L May 23,2005, page 3 of 3 0.13 y L1 Rev.2.00, 6.60 0.40 0.50 1.0 0.60 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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