RENESAS CY25AAJ-8F-T13

CY25AAJ-8F
Nch IGBT for Strobe Flasher
REJ03G0283-0100
Rev.1.00
Aug.20.2004
Features
• VCES : 400 V
• ICM : 150 A
• Drive voltage :4 V
Outline
SOP-8
5,6,7,8
5
8
4
1,2,3 : Emitter
4
: Gate
5,6,7,8 : Collector
4
1
1,2,3
Applications
Strobe flasher for cameras
Maximum Ratings
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulse)
Junction temperature
Storage temperature
Rev.1.00, Aug.20.2004, page 1 of 4
Symbol
VCES
VGES
VGEM
ICM
Ratings
400
±6
±8
150
Unit
V
V
V
A
Tj
Tstg
– 40 to +150
– 40 to +150
°C
°C
Conditions
VGE = 0 V
VCE = 0 V
VCE = 0 V, tw = 10 s
CM = 400 µF
(see performance curve)
CY25AAJ-8F
Electrical Characteristics
(Tch = 25°C)
Parameter
Collector-emitter breakdown voltage
Gate-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Symbol
V(BR)CES
V(BR)GES
ICES
IGES
VGE(th)
Min.
450
±8
—
—
—
Typ.
—
—
—
—
—
Max.
—
—
10
±10
1.5
Unit
V
V
µA
µA
V
Performance Curves
Maximum Pulse Collector Current
(Conductive Capability in Strobe Flasher Applications)
Pulse Collector Current ICM (A)
160
CM
µF
Tc = 70 C
RG = 30Ω
120
80
40
0
0
2
4
6
Gate-Emitter Voltage VGE (V)
Rev.1.00, Aug.20.2004, page 2 of 4
8
Test conditions
IC = 1 mA, VGE = 0 V
IG = ±100 µA, VCE = 0 V
VCE = 400 V, VGE = 0 V
VGE = ±6 V, VCE = 0 V
VCE = 10 V, IC = 1 mA
CY25AAJ-8F
Application Example
IXe
Vtrig
CM
+
–
Trigger Signal
Vtrig
IGBT
Gate Voltage
VG
VCM
RG
VCE
30Ω
VG
IGBT
VCM
ICP
CM
VGE
Recommended Operation
Conditions
330 V
120 A
330 µF
5V
Maximum Operation
Conditions
350 V
130 A
400 µF
—
Xe Tube Current IXe
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 0.1A. (In general, when RG (off) = 30 Ω, it is
satisfied.)
3. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 150 A : full luminescence
condition) of main capacitor (CM = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period
under full luminescence condition is over 3 seconds.
4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
Rev.1.00, Aug.20.2004, page 3 of 4
CY25AAJ-8F
Package Dimensions
8P2S-B(SOP-8)
JEDEC Code
Mass (g) (reference value)
Lead Material
0.07
Cu alloy
Conforms
4.4
6.0
EIAJ Package Code

A
1.8 max
Detail A
1.5
0.1±0.1
0.05 or then
0.4
0.9
10°max
0.15
5.0
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
0.4
0.1
1.27
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Surface-mounted type Taping
3000 Type name – T +Direction (1 or 2)+3
Surface-mounted type Plastic Magazine (Tube)
100 Type name
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 4 of 4
Standard order
code example
CY25AAJ-8F-T13
CY25AAJ-8F
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501
Renesas Technology Europe Limited.
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900
Renesas Technology Europe GmbH
Dornacher Str. 3, D-85622 Feldkirchen, Germany
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11
Renesas Technology Hong Kong Ltd.
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2375-6836
Renesas Technology Taiwan Co., Ltd.
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0