AN180 : Using the X80070 in an Advanced TCA Application

Using the X80070 in an Advanced TCA
Application
®
Application Note
December 1, 2004
AN180.0.0
Author: Carlos Martinez
Introduction
This application note describes one possible implementation
of an Advanced TCA (PICMG 3.x) power supply control. This
particular implementation shows the power on control of one
-48 to 12V, 144W DC-DC power supply, with a number of
circuits included to meet the requirements of the PICMG3.x
specification.
Some of the key elements in the application are:
• Use of an X80070 hotswap controller
This device provides a controlled delay on the main FET turn
on, changeable FET gate currents to control the FET slew
rate, and a PWRGD output that turns on the DC-DC converter only after the main FET is on.
• Input protection
To conform to the ATCA specification, this section includes
the required fusing and filtering at the main power connector.
• DC-DC converter
The chosen DC-DC converter supplies 12A of output current
at 12V. The circuit includes filtering at the input of the supply
and enough capacitance to power the board for 5ms during
an input short circuit, a PICMG3.x requirement.
• Precharge circuits
This block is optional, but uses the Early -48V connections of
the ATCA backplane to precharge the bulk capacitance of
the DC-DC converter. This will minimize the surge current
through the main power FET.
• Discharge circuits
This block will likely be requires in all systems for safety reasons. It discharges the bulk capacitors when the board is
removed from the system.
This application example includes a number of external
circuits that provide additional circuit protection and
additional features. In an actual implementation, some
changes may be required, especially in choice of filters, in
order to optimize the power supply performance.
X80070 Hotswap Control
The X80070 device is a hot swap controller that allows a
board to be safely inserted and removed from a live
backplane without turning off the main power supply.
During insertion, the gate of an external power MOSFET is
clamped low to suppress contact bounce. The
under-voltage/over-voltage circuits and the power on reset
circuitry suppress the gate turn on until the mechanical
bounce has ended. The X80070 turns on the gate with a
user set slew rate to limit the inrush current. The X80070
1
incorporates an electronic circuit breaker set by a 20mΩ
sense resistor. After the load is successfully charged, the
PWRGD signal is asserted; indicating that the device is
ready to power sequence the DC-DC power brick.
At all times, the X80070 monitors for undervoltage,
overvoltage, and overcurrent conditions. If any fault occurs,
the gate will be immediately shut off and the PWRGD will be
returned to the inactive state. The X80070 contains factory
programmable overvoltage, undervoltage and overcurrent
detection levels and programmable hardshort retry and gate
control slew rates.
Board Schematic and Layout
For the full schematic, see the separate file: ATCA X80070
Schematic.PDF.
X80070 Hot Swap Circuit Power Supply
The X80070 receives power on the VDD pin. The design
shows the required 12V supply being generated by a resistor
and a 12V zener diode controlling the base of a pass
transistor. The transistor must be able to handle more than
80V and more than 0.7W of power dissipation (at 80V). The
circuit uses an MJD340 transistor that is rated at 300V and
15W. In the circuit, the voltage is dropped from 48V to 12 V
through the 0.25W, 27kΩ resistor R3 to provide 1.3mA for
the base drive and for zener regulation. The chosen zener
regulates well with 1mA of current.
The 12V regulator needs to provide an estimated 6.5mA
typical continuous current (10mA peak). The X80070
requires 2.5mA during normal operation and the isolation
circuits (described below) require 4.5mA. This results in
maximum continuous power dissipation of 0.36W across the
transistor at -48V.
Part of the 12V current goes to powering an ADuM1401
isolation circuit from Analog Devices. This device requires a
5V supply at a maximum 2.4mA. The 5V is supplied by a 5V
regulator on the X80070, with an emitter follower providing
the needed current.
X80070 Overvoltage/Undervoltage Circuits
The undervoltage/overvoltage is provided by a resistor
divider between the -48V and -48V return leads. The
resistors in this divider are selected so the Overvoltage (OV)
setting is 74.9V, the primary Undervoltage (UV1) setting is
42.4V and the secondary Undervoltage (UV2) setting is
33.2V. The resistors can be changed to change these
thresholds, but the ratio of the OV and UV remain fixed by
the internal levels. These internal thresholds can be set by
Intersil during manufacture, if other OV and UV levels are
needed. Contact Intersil for more information about this
procedure.
Application Note 180
In the X80070 the active undervoltage detector is selected
by the BATT-ON pin. If BATT-ON is LOW (or unconnected)
then the higher undervoltage level is set (42.4V). If BATT-ON
is pulled HIGH, then the lower undervoltage level is set
(33.2V). Since the chosen DC-DC converter provides full
power down to 35V, it is not desired to turn off the FET
above this threshold. As such, the BATT-ON pin is tied HIGH
in this application.
This circuit also contains a 6.2V zener diode to protect the
device from high voltage transients through the mains and a
capacitor to limit any false overvoltage and undervoltage
conditions due to input voltage transients.
According to the ATCA specifications, the system must not
respond to OV transients shorter than 10ms at 75V. This
assumes an input voltage rise time of 10V/ms. The size of a
capacitor was determined by simulation. The simulation and
results are in the appendices.
Another consequence of the overvoltage test is the
generation of a very large current through the bulk capacitor
when the input voltage goes from 48 to 72V. Without
correction, the X80070 will turn off the FET due to this large
current. To deal with this, a current limiter is placed on the
main FET. This requires a 100mΩ resistor in line with the
main power FET. An NPN transistor monitors the voltage
across this resistor. When the current reaches 7.7A, the
transistor begins to turn on. This pulls down on the FET gate
to partially turn it off. If the current remains at a level greater
than 5.5A for more than 10ms, the X80070 turns off the FET,
which shuts down the board.
X80070 Hotswap and Support Circuits
The primary components in the hotswap circuit are the FET
and the sense resistor. The FET in this application is an
IRFS23N15D from International Rectifier. The data sheet for
this device is available on the CDROM or from the web site
www.irf.com. This FET was chosen to provide the 8A peak,
and maximum 5.1A continuous current. The sense resistor
value is 10mΩ. This resistor sets the overcurrent condition at
5Am, since the X80070 overcurrent threshold is 50mV. An
optional resistor divider in this circuit allows the over current
level to be trimmed, to set the over current level to 5.5A, for
example.
FET feedback components (C3 and R6) provide
compensation for the FET during turn on. The value of the
resistance is not critical. The board default is 4.7kΩ. The
capacitor value depends on the load capacitance and the
desired maximum surge current.
A rough calculation for the value of C3 is:
I GATE × C LOAD
C3 = -----------------------------------------I INRUSH
Assuming a gate current of 70µA a maximum surge current
of 8A, and a 2200µF load capacitance, C3 is calculated to be
2
19nF and chosen as 22nF. If the surge current is too high,
the gate current can be set to 10µA or 50µA by controlling
the IGQ0 and IGQ1 pins of the X80070.
When power is first applied to the system, the FET tries to
turn on due to its internal gate to drain capacitance (Cgd)
and the feedback capacitor C3. The X80070 device, when
powered, pulls the gate output low to prevent the gate
voltage from rising and keep the FET from turning on.
However, unless VDD powers up very quickly, there will be a
brief period of time during initial application of power when
the X80070 circuits cannot hold the gate low. The use of an
external capacitor (C5) prevents this. Capacitors C3 and C5
form a voltage divider to prevent the gate voltage from rising
above the FET turn on threshold before the X80070 can hold
the gate low. Use the following formula for choosing C5.
V1 – V2
C5 = --------------------- C3
V2
Where:
V1 = Maximum input voltage,
V2 = FET threshold Voltage,
C5 = Gate capacitor,
C3 = Feedback capacitor.
In a system where VDD rises very fast, a smaller value of C5
may suffice as the X80070 will control voltage at the gate
before the voltage can rise to the FET turn on threshold. The
application assumes that the input voltage rises only to 20V
before the X80000 sees operational voltage on VDD . So C5
is chosen to be 100nF. If C3 is used then the series resistor,
R6, is required to prevent high frequency oscillations.
The values of C3 and C5 can be reduced by using the
optional pre-charge circuit described below. This circuit
gradually charges the bulk capacitor, partially or completely,
before the X80070 turns on the FET. This reduces or
eliminates the surge current and gives more flexibility in the
choice of these components.
X80070 Reset Input
The X80070 device has an MR input pin that signals a “Hot
side” reset. Pulling this input LOW tells the device to
terminate a hotswap operation that results in the Main FET
gate going LOW. This turns off the FET. This application has
three board power management mechanisms for controlling
this input pin.
First, the IPMI circuit has control of this pin through an
isolated interface. The system can hold off the application of
power to the board until authorized by the shelf manager.
Then it can specify a “Soft-Insert” to set the MR pin HIGH
and turn on the FET. Before board extraction, the IPMI
controller can specify a “Soft-extract” to bring the MR pin
LOW and turn off the FET. If this function is not needed, then
the two shutdown control FETs (Q5 and Q6), the resistor
(R23) and the isolation circuit (part of U3) can be removed.
AN180.0.0
December 1, 2004
Application Note 180
Second, assuming that there is no IPMI control and there is
a precharge circuit, the MR pin on the X80070 is pulled up
with a 100K resistor and has a 10µF capacitor to VEE. This
one second (1s) time constant gives the precharge circuit
time to work.
Third, without using the precharge circuit (and with or
without the remote IPMI control, the capacitor can be
removed and the X80070 internal 50ms delay holds off the
hotswap operation until the contact bounce on insertion has
decayed.
X80070 DC-DC Converter Interface Circuits.
The X80070 powers up one DC/DC converter. Typically this
has a 12V or 5V output that is distributed to other DC-DC
converters providing a variety of voltage sources. The
DC-DC converter specified in this application is a SynQor
144W, 12V module.
The DC-DC converter is controlled by the PWRGD signal.
Prior to the main power control FET turning on the PWRGD
signal is HIGH. When it is HIGH, the optical isolator is turned
on with about 1.5mA of current. This turns on the
optoisolator transistor. This pulls the ON/OFF pin LOW and
the DC-DC converter output is off.
As the main power control FET turns on, the voltage on gate
pin gradually increases, until it is equal to VDD, when the
FET is fully turned on. When the voltage on the Gate pin
exceeds VDD-1V, the PWRGD signal goes LOW. When it
goes LOW, the FET turns off the optical isolator, which
allows the ON/OFF input to be pulled HIGH, turning on the
DC-DC output. PWRGD is also optionally available to the
IPMI controller through the ADuM1401 isolation device.
To meet noise requirements of the ATCA specification, a
filter is placed between the FET switch and the DC-DC
converter. Also, in order to meet the requirements that the
board maintain operation in the event of a 5ms loss of input
power, a 2200µF capacitor is placed at the DC-DC converter
input. The size of this capacitor can be reduced to 47µF if
the secondary of the DC-DC converter can maintain power
for the 5ms period. A combination of capacitors on the input
and output can be used. This application assumes that
additional capacitance on the output of the DC-DC converter
cannot be added. The calculation for the input capacitor is:
dV
i = C ------dt
Where:
i = maximum DC-DC input current (5A)
dV = change in voltage from 43V (minimum board
voltage) to 31V (minimum DC-DC converter turn off
voltage)
dT = time required to hold output (5ms)
Therefore: C = 2083µF (Use 2200µF)
3
IPMI Interface
This interface to the IPMI controller is optional, but if used, it
needs to be isolated. This can be done with optoisolator
components, but in this application, an Analog Devices
ADuM1401 was used. This device takes less current than
optical isolators, so it simplifies the power requirements on
the -48V side, while providing 2500VRMS isolation. It is also
much faster in responding to signals than optically coupled
components at the same current.
In this application, the circuit provides three optically isolated
control signals. These are Manual Reset (MR), PWRGD and
FAR. The MR signal controls Soft Insert and Soft Extract
operations. The PWRGD signal provides an output monitor
of the FET status, and the FAR output indicates to the IPMI
controller if there was a retry during turn-on of the main FET.
X80070 Options
There are a number of hardware options on the X80070.
These are controlled by the connections on the device. If
none of the options are needed, the pins are tied to VEE or
left floating. Table 1 describes each connection.
TABLE 1. X80000 CONFIGURATION
NAME
BATTON
IGQ1
IGQ0
DESCRIPTION
No connect or connect to VEE:
Undervoltage threshold = UV1.
Connect to VRGO:
Undervoltage threshold = UV2.
Quick select of gate current.
IGQ1 IGQ0
0
0
50µA gate current
0
1
10µA gate current
1
0
70µA gate current
1
1
150µA gate current
Input Components
To meet ATCA requirements, each power supply connection
must have a fuse and a filter. The fuses on the return lines
and the main -48V lines are Littlefuse devices rated at 250V
and 7A. Fuses for the Early voltage and enable pins are
rated at 250V and 200mA.
The filters chosen for the main power handling pins were
surface mount Pi filters from Spectrum. These are rated at
200V and 10A. The capacitance value was 4000pF, but
others are available. Also, Spectrum has smaller 100V/10A
Pi filters that were selected for the early and enable pins.
Depending on the filtering needs, feed through filters can be
used instead of the Pi filters.
Also each input requires a blocking diode. The main power
lines use high voltage shottkey devices capable of handling
100V and 5A of current. For the early and enable lines,
smaller blocking diodes are used.
AN180.0.0
December 1, 2004
Application Note 180
Precharge Circuit
The ATCA circuit schematic and simulations include the
optional precharge control. It is not necessary for the
operation of the power supply, but it does have some
advantages. With this circuit, the initial insertion surge
current is very low. This reduces stress on the high voltage
circuits and minimizes the disruption to the -48V backplane.
The X80070 is a good choice when using this circuit,
because the gate output can turn off the precharge circuit
when it turns on the main FET. This reduces the precharge
load during normal operation.
Without the precharge circuit, the system powers up as
normal, but with a higher surge current. The X80070 helps
here as well, because the main FET turn on time can be
controlled by the X80070 selectable gate current. This
allows a wide range of turn on surge currents, though
typically this would be in the 1-7A range. If the surge current
is higher than desired even after selecting a smaller gate
current, then the feedback capacitor can be increased to
reduce the surge.
required by the test. V2 simulates the X80070 gate output. In
the initial turn on test, it is delayed (as would the X80070
gate output be delayed) by about 1s. In the OV transient
test, this voltage is left on. V3 simulates the board being
removed from the system. After the circuit has been
operating for about 1s, this supply turns off to mimic the
removal of the board.
The load resistor (R3) is 10K in the power up/power down
tests, because in these cases, there should be little load.
During the OV transient test, the normal operating current is
assumed to be 3.3A. As such, R3 is 14Ω.
In the simulation, specific part numbers chosen for
components such as FETs, diodes and transistors do not
exactly match those chosen for the schematic, but do have
similar characteristics.
The precharge circuit works by turning on an FET as power
turns on. This FET charges the capacitor through a 50Ω/2W
resistor. The resistor wattage can be reduced using derating
curves, based on the precharge duration. A zener diode
limits the voltage for protection. When the X80070 main FET
gate control output turns on, the precharge FET turns off,
effectively taking this circuit out of operation.
Discharge Circuit
As part of the ATCA specification, the bulk capacitor needs
to be discharged, for safety reasons, when the board is
removed from the system. This is accomplished by using a
third small FET. This FET is turned off while the board is
plugged in and both the -48V Return and -48V pins are
connected. When the board is removed, the discharge circuit
is powered by the bulk capacitor and the FET is allowed to
turn on. The FET remains on until the voltage on the
capacitor has dropped too low to keep it on. This is about
10V across the capacitor. The discharge current is limited by
a 50Ω resistance.
Summary
This application shows a relatively complete hotswap
implementation. Much of the circuitry has been built and
tested, and the remainder has been simulated to verify
proper operation. Individual hotswap applications will no
doubt require some changes to achieve desired functionality.
Once a final design is settled on, the areas that will likely
deserve special attention are board layout and noise
suppression and testing.
Appendix 1 Simulation
This simulation uses a spice simulator. V1 is the main supply
source. It is turned on or off, or raised to OV conditions as
4
AN180.0.0
December 1, 2004
gate
Application Note 180
V2
UV/OV
R1
182000
1µ
V1
Rser=0
V3
C5
.1µ
R2
10000
C4
PULSE(12 0 1.6 0 0 4)
4.75K
R9
100
C2
C3
2N2222
Q2
D2
R6
Rser=3000
BZX84C6V2L
C1
-48RTN
D3
MBR20100CT
R3
10000
2200µ
0.022µ
2.2µ
SUD40N10-25 M4
D1
MBR20100CT
R4
R5
10K R7
.01
.10
-48SW
sense
R8100K
.1µ C9
M1
SUD40N10-25
D6
MBR20100CT
R10
200K
gate3
R15
200K
R12
M3
1500
R11
100
.tran 0 4 0 1e-3
Si4982DY
C8
gate2
R17
50
R14
50
D5
0.002µ
.1µ
BZX84C12L
M2
20K
C7
Si4982DY
BZX84C12L
D4
Q1
2N2222
100
.01µ
C6
R13
R16
200K
R18
FIGURE 1. OV/UV SURGE PLUS POWERUP PRECHARGE AND DISCHARGE SIMULATION CIRCUIT
5
AN180.0.0
December 1, 2004
Application Note 180
MBR20100CT
V2
R6
4.7K
12
D2
1µ
V1
R9
100
C5
.1µ
C3
2N2222
Q2
C1
BZX84C6V2L
R2
10000
C4
0.022µ
C2
2200µ
R3
14
2.7µ
R4
MBR20100CT
.01
.10
-48sw
D1
R5
10K R7
M1
sense
R8 100K
SUD40N10-25
PULSE
(48 75 0 3e-3 3e-3 10e-3 100e-3 1)
R1
182000
gate
D3
UV/OV
-48rtn
.
MBR20100CT
R1
182000
gate
UV/OV
D3
-48rtn
FIGURE 2. 48V to -74V VOLTAGE TRANSIENT SIMULATION CIRCUIT
V2
R6
4.75K
1µ
V1
D2
R9
100
C5
.1µ
2N2222
Q2
C1
BZX84C6V2L
R2
10000
C3
0.022µ
C2
2200µ
R3
14
C4
2.7µ
sense
R8 100K
D1
R4
MBR20100CT
.01
R5
10K
R7
.10
M1
SUD40N10-25
-48sw
PULSE
(48 0 0 0 0 5e-3 100e-3 1)
12
.tran 0 100e-3 0 1e-3
FIGURE 3. -48V to 0V VOLTAGE DROP-OUT SIMULATION CIRCUIT
6
AN180.0.0
December 1, 2004
Application Note 180
V(-48rtn)
50V
V(-48sw)
V(gate2)
V(gate3)
I(R14)
I(R7)
I(R17)
Precharge current limited
to about 190mA.
Discharge Current
less than 190mA
I(R17)
Discharge
Current
45V
V(-48SW) I(R14)
Precharge
Current
40V
180mA
V(gate3)
Input Surge
Current limited
to about 190mA
V(-48sw), V(gate2)
On board removal,
2200uF bulk capacitance
discharges to less than
12V in 1s.
I(R7)
Input Surge
Current
35V
200mA
160mA
140mA
30V
120mA
25V
100mA
20V
80mA
V(gate3)
15V
60mA
V(gate2)
10V
40mA
5V
20mA
0mA
0V
Capacitor precharges for about 1s
A shorter precharge period increases surge current I(R7)
A longer precharge period decreases surge current I(R7)
-5V
0.0s
0.4s
0.8s
1.2s
1.6s
2.0s
2.4s
2.8s
3.2s
3.6s
-20mA
4.0s
FIGURE 4. POWER UP AND DE-INSERTION PLOT
7
AN180.0.0
December 1, 2004
Application Note 180
V(-48rtn)
V(uv/ov)*10
V(sense)*1000
I(R7)
8.0A
75V
Load Current limited to 7.7A
70V
7.2A
65V
6.4A
V(-48rtn)
Load
Voltage
60V
5.6A
I(R7)
Load
Current
55V
4.8A
Current sense voltage does not exceed 50mV OC limit
50V
4.0A
45V
3.2A
Normal Load current = 3.3A
40V
2.4A
35V
1.6A
V(UV/OV) voltage does not exceed 3.9V OV limit
0.8A
30V
V(sense)*1000
25V
0.0A
V(UV/OV)*10
20V
0ms
10ms
20ms
30ms
40ms
50ms
60ms
70ms
80ms
90ms
-0.8A
100ms
FIGURE 5. OV TRANSIENT TEST PLOT
8
AN180.0.0
December 1, 2004
Application Note 180
V(-48rtn)
V(uv/ov)*10
V(n001)
V(sense)*1000
I(R7)
51V
8.0A
Load current limited to 7.7A
48V
7.2A
V(n001) Input Voltage
V(-48Vrtn) Load Voltage
45V
6.4A
42V
5.6A
39V
4.8A
Load Voltage stays above 35V so DC-DC retains enough voltage to operate
36V
4.0A
I(R7) Load current
33V
3.2A
Load current voltage stays below 50mV so X80070 does not turn off FET
V(sense)*1000 load current voltage
30V
2.4A
27V
1.6A
V(UV/OV)*10 Input Voltage
24V
0.8A
Input voltage monitor stays above 1.78V so X80070 does not turn off FET
21V
18V
0ms
0.0A
-0.8A
10ms
20ms
30ms
40ms
50ms
60ms
70ms
80ms
90ms
FIGURE 6. UV VOLTAGE DROP OUT TEST PLOT
9
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Application Note 180
Appendix 2 Bill of Materials
PART TYPE
DESIGNATOR
DESCRIPTION
PART NUMBER
1µF
C1
Capacitor
*
2200µF 100V
C2
Capacitor
Panasonic: ECO-S2AP222BA
0.022µF
C3
Capacitor
*
2.7µF
C4
Capacitor
*
0.1µF
C5
Capacitor
*
0.002µF
C6
Capacitor
*
0.1µF
C7
Capacitor
*
0.01µF
C8
Capacitor
*
0.1µF
C9
Capacitor
*
0.01µF
C10
Capacitor
*
0.01µF
C11
Capacitor
*
0.01µF
C12
Capacitor
*
0.01µF
C13
Capacitor
*
0.01µF
C14
Capacitor
*
MBRM5100
D1
Schottky Diode
Diodes: MBRM5100
6.2V
D2
Zener Diode
Fairchild: BZX84C6V2
MBRM5100
D3
Schottky Diode
Diodes: MBRM5100
12V
D4
Zener Diode
Fairchild: BZX84C12
12V
D5
Zener Diode
Fairchild: BZX84C12
MBRM5100
D6
Schottky Diode
Diodes: MBRM5100
MBRM5100
D7
Schottky Diode
Diodes: MBRM5100
BAS21
D8
Diode
Fairchild: BAS21
BAS21
D9
Diode
Fairchild: BAS21
BAS21
D10
Diode
Fairchild: BAS21
BAS21
D11
Diode
Fairchild: BAS21
4.7V
D12
Zener Diode
Fairchild: BZX84C4V7
12V
D13
Zener Diode
Fairchild: BZX84C12
7A
F1
Fuse
Littlefuse: 326007
7A
F2
Fuse
Littlefuse: 326007
7A
F3
Fuse
Littlefuse: 326007
Fuse
7A
F4
FILTER
F5
Spectrum Control: PSM1-402P-10T
Littlefuse: 326007
FILTER
F6
Spectrum Control: PSM4-402P-10T
FILTER
F7
Spectrum Control: SSM1-402E-10T
FILTER
F8
Spectrum Control: SSM1-402E-10T
FILTER
F9
Spectrum Control: PSM4-402P-10T
FILTER
F10
Spectrum Control: PSM4-402P-10T
FILTER
F11
Spectrum Control: SSM1-402E-10T
FILTER
F12
200mA
F13
Fuse
Littlefuse: 326200
200mA
F14
Fuse
Littlefuse: 326200
200mA
F15
Fuse
Littlefuse: 326200
10
Spectrum Control: SSM1-402E-10T
AN180.0.0
December 1, 2004
Application Note 180
Appendix 2 Bill of Materials (Continued)
PART TYPE
DESIGNATOR
FLTR100V10
F16
DESCRIPTION
PART NUMBER
200mA
F17
IRFS23N15D
M1
*
IRFR120N/SM_2
M2
*
IRFR120N/SM_2
M3
*
DC-DC CONVERTER
M4
SynQor: PQ120QTA12
2N2222
Q1
*
Fuse
Littlefuse: 326200
NPN Transistor
*
2N2222
Q2
NPN Transistor
*
MJD340
Q3
NPN Transistor
*
2N3904
Q4
NPN Transistor
*
2N7002
Q5
*
2N7002
Q6
*
2N7002
Q7
*
182K 1%
R1
*
10K 1%
R2
*
27K
R3
*
10m 1W
R4
*
10K
R5
*
4.7K
R6
*
0.1 4W
R7
*
100K
R8
*
100
R9
*
200K
R10
*
100
R11
*
1.5K
R12
*
20K
R13
*
50 2W
R14
*
200K
R15
*
100K
R16
*
50 2W
R17
*
27K
R18
*
100K
R19
*
100K
R20
*
100K
R21
*
5.1K
R22
*
10K
R23
*
100
R24
*
X80070Q20
U1
*
TLP124B
U2
*
ADUM1401
U3
*
11
AN180.0.0
December 1, 2004
Application Schematic
-48V_RTN
Q4
2N3904
RGO
M4
In
Out
2
7A
MBRM5100
VDD
X80070Q20
13
NA1
12
NA1
Out
2
200mA
F14
Enable_B
27K
20
7
100K
16
3
4
14
6
BAS21
F8
1
In
FILTER
Out
D9
R23
10K
2
200mA
C10
FAR
PWRGD
C1
1uF
FAR
0.1uF
0.01uF
4
3
Q7
2N7002
17
PWRGD
ON/OFF
C11
.01uF
C5
1
2
C3
R6
6.2V
4.7K
0.1uF
22nF
F16 FLTR100V10
4
I+ O+
3
OI-
-48V_SW
5
10K 1%
D12
12V
-V
+Vout
+sense
Trim
-sense
-Vout
C13
1
2
15
D2
R2
10uF
2N7002
BATTON
NA2
NA2
NA2
VEE
D13
Q6
BAS21
MR
VUV/OV
SENSE
In
Delay 1s
8
7
6
5
4
+Vout
+Sense
Trim
-Sense
-Vout
5.1K
U2 TLP124B
R21
GATE
1
D8
2
9
F13
Enable_A
FILTER
3
R22
19
18
IGQ0
IGQ1
R18
F7
DC-DC CONVERTER
+Vin
R19 R20
U1
5
C9
G
1
R3 R1
27K
D6
FILTER
8
12
VRTN_B
X80070 has OV set to
74.9V and UV set to 33.2V
MBRM5100
F6
2&4
F2
100K
7A
100K
Out
2
1
In
D3
FILTER
VRGO
VRTN_A
F5
1
182K 1%
F1
C2
2200uF 100V
1
Q3
MJD340
C4
2.7uF
M1
R9
R8 100K
2N7002
F3
-48_A
F9
1
In
Out
F4
-48_B
R4
2
1
In
Out
U3
2
7A
RGO
Current Limit = 7A
Q2
2N2222
MBRM5100
PWRGD
FAR
R15
200K
2&4
R10
200K
Discharge Circuit
Discharge to 4V in less than 1s
M3
R24
100
1
3
R16
100K
IRFR120N/SM_2
SHDN
R11
100
D5
Pre-charge circuit
Charge to 48V in about 1s
12V
R12
R17
C8
10nF
1.5K
D4
Q1
2N2222
12V
F11
1
In
FILTER
Out
D10
C7
BAS21
0.1uF
2
1
F15
Early_A
200mA
C6
2nF
F17
Early_B
200mA
Chassis Ground
F12
1
In
D11
FILTER
Out
2
BAS21
R14
50 2W
3
2&4
M2
IRFR120N/SM_2
50 2W
R13
20K
C14 0.01uF
C12 0.01uF
0.1 4W
Max current = 5.5A
10ms O.C. delay from 3.3A to 5.5A
D7
FILTER
Chassis ground
R7
10m 1W
MBRM5100
F10
3
R5
10K
D1
FILTER
7A
1
100
SHDN
1
2
3
4
5
6
7
8
ADUM1401
16
15
14
13
12
11
10
9
VDD1VDD2
GND1GND2
VIA
VOA
VIB
VOB
VIC
VOC
VOD VID
VE1
VE2
GND1GND2
IPMI Positive supply
PWRGD OUT
FAR OUT
Remote Shutdown
IPMI neg supply
Connect to IPMI
positive supply to
turn off power
Application Note 180
Q5
IRFS23N15D
4.7V
AN180.0.0
December 1, 2004
Application Note 180
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
13
AN180.0.0
December 1, 2004