IXFT30N60X IXFQ30N60X IXFH30N60X

Preliminary Technical Information
IXFT30N60X
IXFQ30N60X
IXFH30N60X
X-Class HiPerFETTM
Power MOSFET
VDSS
ID25
= 600V
= 30A
 155m

RDS(on)
TO-268 (IXFT)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G
S
D (Tab)
TO-3P (IXFQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
600
V
VDGR
TJ = 25C to 150C, RGS = 1M
600
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
30
A
IDM
TC = 25C, Pulse Width Limited by TJM
60
A
IA
TC = 25C
10
A
EAS
TC = 25C
1
J
dv/dt
IS  IDM, VDD  VDSS, TJ  150°C
50
V/ns
PD
TC = 25C
500
W
-55 ... +150
C
TJM
150
C
Tstg
-55 ... +150
C
300
260
°C
°C
1.13 / 10
Nm/lb.in
4.0
5.5
6.0
g
g
g
TJ
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque (TO-247 & TO-3P)
Weight
TO-268
TO-3P
TO-247
G
D
S
D (Tab)
TO-247 (IXFH)
G
D
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features




International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
600
VGS(th)
VDS = VGS, ID = 4mA
2.5
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V


V
4.5
V

Applications
100 nA

TJ = 125C
25 A
750 A


RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
155 m


© 2015 IXYS CORPORATION, All Rights Reserved
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100658A(5/15)
IXFT30N60X
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
10
RGi
Gate Input Resistance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
17
S
2.6

2270
pF
1610
pF
14
pF
120
375
pF
pF
21
ns
43
ns
58
ns
33
ns
56
nC
12
nC
28
nC
Crss
IXFQ30N60X
IXFH30N60X
Effective Output Capacitance
Co(er)
Co(tr)
Energy related
td(on)
Resistive Switching Times
tr
td(off)
tf
Time related
VGS = 0V
VDS = 0.8 • VDSS
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.25 C/W
RthJC
RthCS
TO-247 & TO-3P
C/W
0.25
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Characteristic Values
Min.
Typ.
Max
30
A
Repetitive, pulse Width Limited by TJM
120
A
VSD
IF = IS, VGS = 0V, Note 1
1.4
V
trr
QRM
IRM
IF = 15A, -di/dt = 100A/μs
145
860
12
VR = 100V
ns
nC
A
Note 1. Pulse test, t  300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFT30N60X
Fig. 1. Output Characteristics @ TJ = 25ºC
IXFQ30N60X
IXFH30N60X
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
30
70
VGS = 10V
9V
VGS = 10V
60
25
8V
9V
50
I D - Amperes
I D - Amperes
20
7V
15
8V
40
30
10
20
6V
5
7V
10
5V
6V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
10
15
VDS - Volts
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 15A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
30
3.8
VGS = 10V
9V
8V
25
VGS = 10V
3.4
RDS(on) - Normalized
3.0
I D - Amperes
20
7V
15
6V
10
2.6
I D = 30A
2.2
1.8
I D = 15A
1.4
1.0
5
5V
0.6
4V
0.2
0
0
2
4
6
8
10
-50
12
-25
0
25
Fig. 5. RDS(on) Normalized to ID = 15A Value vs.
Drain Current
75
100
125
150
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
5.0
4.5
VGS = 10V
BV DSS / V GS(th) - Normalized
1.2
4.0
R DS(on) - Normalized
50
TJ - Degrees Centigrade
VDS - Volts
TJ = 125ºC
3.5
3.0
2.5
TJ = 25ºC
2.0
1.5
BVDSS
1.1
1.0
0.9
0.8
VGS(th)
0.7
1.0
0.5
0.6
0
10
20
30
40
I D - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
50
60
70
-60
-40
-20
0
20
40
60
80
TJ - Degrees Centigrade
100
120
140
160
IXFT30N60X
Fig. 7. Maximum Drain Current vs.
Case Temperature
IXFQ30N60X
IXFH30N60X
Fig. 8. Input Admittance
50
35
30
40
I D - Amperes
I D - Amperes
25
20
15
30
TJ = 125ºC
25ºC
- 40ºC
20
10
10
5
0
0
-50
-25
0
25
50
75
100
125
3.5
150
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGS - Volts
TC - Degrees Centigrade
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
30
100
TJ = - 40ºC
90
80
70
25ºC
20
I S - Amperes
g f s - Siemens
25
125ºC
15
10
60
50
40
TJ = 125ºC
30
20
5
TJ = 25ºC
10
0
0
0
10
20
30
40
50
0.3
0.4
0.5
0.6
I D - Amperes
0.8
0.9
1.0
1.1
1.2
VSD - Volts
Fig. 12. Capacitance
Fig. 11. Gate Charge
10,000
10
9
Ciss
VDS = 300V
Capacitance - PicoFarads
I D = 15A
8
I G = 10mA
7
V GS - Volts
0.7
6
5
4
3
1,000
Coss
100
10
Crss
2
f = 1 MHz
1
0
1
0
10
20
30
40
50
60
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
100
VDS - Volts
1000
IXFT30N60X
Fig. 13. Output Capacitance Stored Energy
IXFQ30N60X
IXFH30N60X
Fig. 14. Forward-Bias Safe Operating Area
20
100
RDS(on) Limit
18
25µs
16
100µs
14
I D - Amperes
EOSS - MicroJoules
10
12
10
8
1
1ms
6
10ms
0.1
TJ = 150ºC
4
DC
TC = 25ºC
Single Pulse
2
0
0.01
0
100
200
300
400
500
600
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_30N60X(J7-R4T45) 5-22-15-A
IXFT30N60X
TO-3P Outline
TO-268 Outline
TO-247 Outline
A
A2
E
0P
0P1
E1
D
A
A2
A2
Q
+
D1
D
2
L1
D2
0P1
1
3
S
+
D1
D
4
1
+
R
+
A
+ 0K M D B M
0P O
B
E
S
+
IXFQ30N60X
IXFH30N60X
2
3
4
ixys option
L1
C
A1
E1
L
A1
Terminals: 1 - Gate
3 - Source
2,4 - Drain
b
b2
c
b4
e
PINS: 1 - Gate
2, 4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
c
b
b2
b4
e
+ J M C AM
O
PINS: 1 - Gate
2, 4 - Drain
3 - Source