Advance Technical Information IXFQ28N60P3 IXFH28N60P3 Polar3TM HiperFETTM Power MOSFETs VDSS ID25 = 600V = 28A Ω ≤ 260mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C 28 A IDM TC = 25°C, Pulse Width Limited by TJM 70 A IA TC = 25°C 14 A EAS TC = 25°C 500 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns PD TC = 25°C 695 W -55 ... +150 °C TJ S TO-247 ( IXFH) G TJM 150 °C -55 ... +150 °C Features 300 260 °C °C z 1.13 / 10 Nm/lb.in. z 5.5 6.0 g g z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque Weight TO-3P TO-247 D z Tab S G = Gate S = Source Tstg TL Tsold Tab D = Drain Tab = Drain Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved z V 5.0 V ±100 nA 25 μA 1.5 mA 260 mΩ High Power Density Easy to Mount Space Savings Applications z z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100322(03/11) IXFQ28N60P3 IXFH28N60P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 18 Ciss Coss 30 S 3560 pF 360 pF 3.3 pF 1.0 Ω 27 ns 18 ns 48 ns 19 ns 50 nC 17 nC 14 nC 0.25 0.18 °C/W °C/W VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs TO-3P Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 28 A Repetitive, Pulse Width Limited by TJM 112 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 14A, -di/dt = 100A/μs VR = 100V, VGS = 0V 9.0 A 0.8 μC TO-247 Outline 1 2 ∅P 3 e Note Terminals: 1 - Gate 3 - Source 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFQ28N60P3 IXFH28N60P3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 28 60 VGS = 10V 8V 24 VGS = 10V 8V 50 20 7V 7V ID - Amperes ID - Amperes 40 16 12 6V 30 20 8 6V 10 4 5V 5V 0 0 0 1 2 3 4 5 6 7 0 8 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 14A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 28 3.4 VGS = 10V 7V 20 VGS = 10V 3.0 R DS(on) - Normalized 24 ID - Amperes 20 VDS - Volts VDS - Volts 6V 16 12 8 2.6 I D = 28A 2.2 I D = 14A 1.8 1.4 1.0 5V 4 0.6 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 14A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 30 3.4 VGS = 10V TJ = 125ºC 25 2.6 20 ID - Amperes R DS(on) - Normalized 3.0 2.2 1.8 10 TJ = 25ºC 1.4 15 5 1.0 0.6 0 0 10 20 30 40 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 50 60 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFQ28N60P3 IXFH28N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 50 60 TJ = - 40ºC 50 TJ = 125ºC 25ºC - 40ºC 25ºC g f s - Siemens ID - Amperes 40 30 20 40 125ºC 30 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 VGS - Volts 30 40 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 10 90 9 80 8 70 7 VDS = 300V VGS - Volts IS - Amperes I D = 14A 60 50 40 30 I G = 10mA 6 5 4 3 TJ = 125ºC 20 2 TJ = 25ºC 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 5 10 VSD - Volts 15 20 25 30 35 40 45 50 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 Ciss 100µs 1,000 10 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 100 1 10 TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFQ28N60P3 IXFH28N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.3 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_28N60P3(K7)03-23-11