Advance Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V = 50A Ω ≤ 145mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA G D 50 A 125 A TC = 25°C 25 A EAS TC = 25°C 1 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns PD TC = 25°C 1040 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. z 4.0 5.5 6.0 g g g z TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247 & TO-3P) Weight TO-268 TO-3P TO-247 S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C z z V Applications 5.0 V ±100 nA z 25 μA 2 mA z 145 mΩ z z z © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100310(03/11) IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 32 Ciss 55 S 6300 pF 630 pF 2.5 pF 1.0 Ω 31 ns VGS = 0V, VDS = 25V, f = 1MHz Coss Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr TO-3P Outline 20 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 62 ns tf RG = 1Ω (External) 17 ns 94 nC 27 nC 23 nC Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd 0.12 °C/W RthJC RthCS (TO-247 & TO-3P) °C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr Characteristic Values Min. Typ. Max. 50 A Repetitive, Pulse Width Limited by TJM 200 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 25A, -di/dt = 100A/μs IRM VR = 100V, VGS = 0V QRM Note 11 A 1.1 μC TO-247 Outline 1 2 ∅P 3 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 Outline e Terminals: 1 - Gate 3 - Source Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 50 100 VGS = 10V 7V 40 80 35 70 30 6V 25 20 7V 60 50 40 6V 15 30 10 20 5 VGS = 10V 8V 90 ID - Amperes ID - Amperes 45 10 5V 5V 0 0 0 1 2 3 4 5 6 0 7 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 50 3.4 VGS = 10V 7V 45 VGS = 10V 3.0 40 ID - Amperes R DS(on) - Normalized 6V 35 30 25 20 15 I D = 50A 2.2 I D = 25A 1.8 1.4 1.0 5V 10 2.6 0.6 5 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 60 3.0 VGS = 10V 50 TJ = 125ºC 40 2.2 ID - Amperes R DS(on) - Normalized 2.6 1.8 1.4 30 20 TJ = 25ºC 10 1.0 0.6 0 0 10 20 30 40 50 60 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 80 120 TJ = - 40ºC 70 100 ID - Amperes g f s - Siemens TJ = 125ºC 25ºC - 40ºC 60 50 40 30 80 25ºC 60 125ºC 40 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 VGS - Volts 40 50 60 70 80 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 140 120 I D = 25A 8 I G = 10mA 7 100 VGS - Volts IS - Amperes VDS = 300V 9 80 60 5 4 3 TJ = 125ºC 40 6 TJ = 25ºC 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 VSD - Volts 30 40 50 60 70 80 90 100 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 10,000 RDS(on) Limit 1,000 100 Coss ID - Amperes Capacitance - PicoFarads Ciss 100 100µs 10 10 TJ = 150ºC TC = 25ºC Single Pulse Crss f = 1 MHz 1ms 1 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_50N60P3(W8)03-10-11