Si photodiodes S2387 series For visible to IR, general-purpose photometry Features Applications High sensitivity in visible to infrared range Analytical equipment Low dark current Optical measurement equipment, etc. High linearity Structure / Absolute maximum ratings Type No. S2387-16R S2387-33R S2387-66R S2387-1010R S2387-130R Window material Resin potting Package Photosensitive area size Effective photosensitive area (mm) 2.7 × 15 6 × 7.6 8.9 × 10.1 15 × 16.5 3.0 × 40 (mm) 1.1 × 5.9 2.4 × 2.4 5.8 × 5.8 10 × 10 1.2 × 29.1 (mm2) 6.4 5.7 33 100 35 Absolute maximum ratings Reverse Operating Storage voltage temperature temperature VR max Topr Tstg (V) (°C) (°C) 30 -20 to +60 -20 to +80 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. Peak Spectral response sensitivity range wavelength λ λp Photosensitivity S (A/W) Short circuit Dark Rise time Temp. current current tr coefficient Isc ID of ID VR=0 V 100 lx VR=10 mV TCID RL=1 kΩ Max. λp (nm) S2387-16R S2387-33R 340 to 1100 S2387-66R S2387-1010R S2387-130R (nm) 960 GaP He-Ne Min. Typ. LED laser 560 nm 633 nm (μA) (μA) 4.4 6.0 4.4 5.8 0.58 0.33 0.37 24 31 68 91 25 32 (pA) (times/°C) 5 50 200 100 www.hamamatsu.com 1.12 Noise Terminal Shunt equivalent capacitance resistance power Ct NEP Rsh VR=0 V VR=10 mV VR=0 V f=10 kHz λ=λp (μs) (pF) 1.8 730 10 33 11 4300 12000 5000 Min. Typ. (GΩ) (GΩ) (W/Hz1/2) 50 9.9 × 10-16 0.2 10 0.05 5 0.1 20 2.2 × 10-15 3.1 × 10-15 1.6 × 10-15 2 1 Si photodiodes S2387 series Photosensitivity temperature characteristic Spectral response (Typ. Ta=25 °C) 0.7 Temperature coefficient (%/°C) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 300 400 500 600 700 800 900 1000 1100 (Typ.) +1.5 +1.0 +0.5 0 -0.5 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Wavelength (nm) KSPDB0115EB KSPDB0058EC Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 1 nA S2387-1010R Dark current 100 pA S2387-66R 10 pA S2387-130R 1 pA 100 fA 10 fA 0.01 S2387-16R/33R 0.1 1 10 100 Reverse voltage (V) KSPDB0117EC 2 Si photodiodes S2387 series Dimensional outlines (unit: mm) S2387-16R Photosensitive 7.6 ± 0.1 area 2.4 × 2.4 6.0 ± 0.1 2.7 ± 0.1 Hole (2 ×) 0.8 S2387-33R Photosensitive area 1.1 × 5.9 10.5 0.35 1.5 ± 0.1 13.5 ± 0.13 0.5 Lead 0.5 Lead 6.6 ± 0.3 Anode terminal mark 4.5 ± 0.2 Anode terminal mark 8.5 ± 0.2 5.0 ± 0.3 6.2 0.45 15 ± 0.15 0.75 Resin Photosensitive surface Resin 2.0 ± 0.1 Photosensitive surface The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0106EB KSPDA0108EB S2387-66R Photosensitive area 10 × 10 16.5 ± 0.2 15.0 ± 0.15 10.1 ± 0.1 8.9 ± 0.1 Photosensitive surface 10.5 0.9 0.3 Resin 10.5 0.5 Lead 2.15 ± 0.1 Photosensitive surface 2.0 ± 0.1 0.75 0.3 Resin 0.5 Lead 9.2 ± 0.3 15.1 ± 0.3 7.4 ± 0.2 12.5 ± 0.2 Anode terminal mark 8.0 ± 0.3 Anode terminal mark The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0110EB 13.7 ± 0.3 Photosensitive area 5.8 × 5.8 S2387-1010R The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0112EB 3 Si photodiodes S2387 series S2387-130R 40.0 ± 0.7 1.2 29.1 Photosensitive area 1.2 × 29.1 3.2 ± 0.2 Photosensitive surface 0 3.0+-0.3 33.1 ± 0.7 0.4 Resin 13 ȁ0.45 Lead 33.1 ± 0.7 The resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0117EB Information described in this material is current as of November, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1033E05 Nov. 2012 DN 4