Si APD S12426 series Low bias operation, high-speed Si APD for 900 nm The S12426 series Si APDs are designed to provide a peak sensitivity wavelength in the 900 nm band where optical rangefinders are increasingly used. The S12426 series deliver faster response and lower bias operation than our existing Si APD (S9251 series). Features Applications Peak sensitivity wavelength: 840 nm (gain=100) Optical rangefinders Low bias operation: Breakdown voltage=200 V max. High-speed response: Cutoff frequency=650 MHz typ. (S12426-02, λ=900 nm, M=100) Structure Parameter Photosensitive area size*1 Effective photosensitive area Package Window material Symbol A - S12426-02 ϕ0.2 0.03 S12426-05 ϕ0.5 0.19 TO-18 Borosilicate glass Unit mm mm2 - Value -20 to +85 -55 to +125 0.2 10 260 °C or less, within 10 s Unit °C °C mA mA - *1: Photosensitive area in which a typical gain can be obtained Absolute maximum ratings Parameter Operating temperature Storage temperature Reverse current (DC) Forward current Soldering conditions Symbol Topr Tstg Irmax Ifmax - Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Si APD S12426 series Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range Peak sensitivity wavelength Photosensitivity Quantum efficiency Breakdown voltage Temp. coefficient of VBR Dark current Temp. coefficient of ID λ λp S QE VBR ΔTVBR ID ΔTID Cutoff frequency fc Rise time tr Terminal capacitance Excess noise figure Gain Ct x M Condition M=100 λ=900 nm, M=1 λ=900 nm, M=1 ID=100 μA M=100 λ=900 nm, M=100 M=100, RL=50 Ω λ=900 nm, -3 dB M=100, RL=50 Ω λ=900 nm, 10% to 90% M=100, f=1 MHz M=100, λ=900 nm λ=900 nm S12426-02 Typ. Max. 400 to 1150 840 0.52 70 120 160 200 1.1 0.1 1 1.1 - Min. Unit nm nm A/W % V V/°C nA times/°C - 650 - - 600 - MHz - 0.55 - - 0.6 - ns - 0.5 0.3 100 - - 1.1 0.3 100 - pF - Spectral response Quantum efficiency vs. wavelength (Typ. Ta=25 °C, M=100 at 900 nm) 60 S12426-05 Typ. Max. 400 to 1150 840 0.52 70 120 160 200 1.1 0.2 2 1.1 - Min. (Typ. Ta=25 °C) 100 90 80 Quantum efficiency (%) Photosensitivity (A/W) 50 40 30 20 70 60 50 40 30 20 10 10 0 400 600 800 1000 1200 0 400 600 800 1000 1200 Wavelength (nm) Wavelength (nm) KAPDB0269EA KAPDB0277EA 2 Si APD S12426 series Dark current vs. reverse voltage Tarminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 100 μA (Typ. Ta=25 °C) 100 pF 10 μA Tarminal capacitance Dark current 1 μA 100 nA 10 nA 1 nA S12426-05 100 pA 10 pA 10 pF S12426-05 1 pF S12426-02 S12426-02 1 pA 100 fF 0 20 40 60 80 100 120 140 160 180 200 Reverse voltage (V) 0 20 40 60 80 100 120 140 160 180 200 Reverse voltage (V) KAPDB0270EA KAPDB0272EA Gain vs. reverse voltage (Typ. λ=900 nm) 10000 0 ˚C Gain 1000 20 ˚C 40 ˚C 60 ˚C 80 ˚C -10 ˚C 100 10 1 100 120 140 160 180 200 220 240 Reverse voltage (V) KAPDB0271EA 3 Si APD S12426 series Directivity (Typ. light source: tungsten lamp) 20° 10° 0° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 100 80° 80 60 40 20 0 20 40 60 80 90° 100 Relative sensitivity (%) KAPDB0292EA ϕ4.7 ± 0.1 X ϕ0.45 Lead (13.5) Photosensitive surface 2.8 3.7 ± 0.2 Photosensitive area A ϕ5.4 ± 0.2 Y Window ϕ2.0 Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.2) ϕ2.54 ± 0.2 Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 Case Type no. S12426-02 S12426-05 A ϕ0.2 ϕ0.5 KAPDA0148EA 4 Si APD S12426 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic package products Technical information ∙ Si APD Information described in this material is current as of September, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. 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Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KAPD1047E01 Sep. 2014 DN 5