InGaAs PIN photodiodes G11193 series Small package, surface mount type Features Applications Small SMD (surface mount device) package Optical power meter Low noise, low dark current Measurement/analytical instruments Low price Structure Parameter Package Photosensitive area Window G11193-02R G11193-03R Unit mm - SMD φ0.2 φ0.3 Resin Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Condition G11193-02R G11193-03R Unit V °C °C 10 -25 to +85 -40 to +100 No dew condensation*1 No dew condensation*1 *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Cut-off frequency Terminal capacitance Shunt resistance Detectivity Symbol λ Condition Higher than 10% of peak λp S ID fc Ct Rsh D* λ=1.3 μm λ=1.55 μm VR=5 V VR=5 V, RL=50 Ω VR=5 V, f=1 MHz VR=10 mV λ=λp Min. G11193-02R Typ. Max. Min. G11193-03R Typ. Max. Unit - 0.9 to 1.7 - - 0.9 to 1.7 - μm - 1.55 - - 1.55 - μm 0.75 0.77 - 0.85 1.0 40 1 3 1000 5 × 1012 800 - 0.75 0.77 - 0.85 1.0 100 0.5 5 700 5 × 1012 1200 - A/W pA GHz pF MΩ cmăHz1/2/W The G11193 series may be damaged by electrostatic discharge, etc. Be careful when using the G11193 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G11193 series Spectral response Photo sensitivity temperature characteristic (Typ. Ta=25 °C) 1.2 Temperature coefficient (%/°C) 1.0 Photo sensitivity (A/W) (Typ. Ta=25 °C) 2 0.8 0.6 0.4 0.2 0 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 1.5 1 0.5 0 -0.5 -1 0.2 0.4 0.6 0.8 Wavelength (µm) 1.0 1.2 1.4 1.8 Wavelength (µm) KIRDB0409EA KIRDB0445EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 10 nA 1.6 (Typ. Ta=25 °C, f=1 MHz) 1 nA Terminal capacitance Dark current 1 nA G11193-03R 100 pA 10 pA G11193-02R 100 pF G11193-03R 10 pF G11193-02R 1 pF 1 pA 100 fA 0.01 0.1 1 10 100 Reverse voltage (V) 100 fF 0.01 0.1 1 10 100 Reverse voltage (V) KIRDB0446EA KIRDB0447EA 2 InGaAs PIN photodiodes G11193 series Dark current vs. ambient temperature (Typ. VR=5 V) 100 nA Dark current 10 nA 1 nA G11193-03R 100 pA G11193-02R 10 pA 1 pA -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature (°C) KIRDB0448EA 3 InGaAs PIN photodiodes G11193 series Dimensional outline (unit: mm) Photosensitive area 5.0 ± 0.2 1.2 ± 0.2 1.8 0.6 ± 0.2 1.8 1.0 ± 0.1 4.0 ± 0.2 Photosensitive surface (2 ×)R 0.4 ± 0.1 1.5 1.0 0.6 (2 ×) (R 0.2) Cathode Anode 0.7 3.0 0.7 Type no. Photosensitive area G11193-02R 0.2 G11193-03R 0.3 KIRDA0210EB Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Surface mount type products Technical information ∙ Infrared detectors Information described in this material is current as of July, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1111E02 Jul. 2015 DN 4