RENESAS HVC306C

HVC306C
Variable Capacitance Diode for VHF tuner
REJ03G0514-0200
(Previous: ADE-208-1600A)
Rev.2.00
Feb 08, 2005
Features
• High capacitance ratio (n = 11.0 min).
• Low series resistance and good C-V linearity.
• Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Renesas Code
Previous Code
HVC306C
E1
PWSF0002ZA-A
UFP
Pin Arrangement
Cathode mark
Mark
1
E1
2
1. Cathode
2. Anode
Rev.2.00 Feb 08, 2005 page 1 of 4
HVC306C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Symbol
VRM *
Reverse voltage
Junction temperature
VR
Tj
Storage temperature
Note: 1. RL = 10 kΩ
Tstg
1
Value
35
Unit
V
34
150
V
°C
−55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Min
Typ
Max
Unit
Reverse current
Item
IR1
IR2
—
—
—
—
10
100
nA
VR = 32 V
VR = 32 V, Ta = 60°C
Capacitance
C2
C25
29.5
2.57
—
—
34.0
2.90
pF
VR = 2 V, f = 1 MHz
VR = 25V, f = 1 MHz
Capacitance ratio
Series resistance
n
rS
11.0
—
—
—
—
0.75
—
Ω
C2 / C25
VR = 5 V, f = 470 MHz
Matching error
∆C/C *
—
—
2.0
%
VR = 2 to 25 V, f = 1 MHz
Note:
Symbol
1
Test Condition
1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel ,
expect extention to another group.
Calculate Matching Error,
(Cmax – Cmin)
∆C/C =
× 100 (%)
Cmin
Rev.2.00 Feb 08, 2005 page 2 of 4
HVC306C
Main Characteristic
10–6
60
f = 1MHz
50
10–8
Capacitance C (pF)
Reverse current IR (A)
10–7
10–9
10
–10
10–11
30
20
10
10–12
10–13
40
0
10
20
30
40
0
0.5
50
1.0
10
30
Reverse voltage VR (V)
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Fig.2 Capacitance vs. Reverse voltage
1.0
0.0
f = 470MHz
LF = ∆ (LogC) / ∆ (LogVR)
Series resistance rS (Ω)
0.8
0.6
0.4
–0.5
–1.0
–1.5
0.2
0
0.5
1.0
10
30
–2.0
0.5
1.0
10
30
Reverse voltage VR (V)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Fig.4 Linearity factor vs. Reverse voltage
Rev.2.00 Feb 08, 2005 page 3 of 4
HVC306C
Package Dimensions
JEITA Package Code
SC-79
RENESAS Code
Previous Code
PWSF0002ZA-A
UFP / UFPV
MASS[Typ.]
0.0016g
D
b
E
HE
c
l1
e1
A
l1
b2
Pattern of terminal position areas
Reference
Symbol
A
b
c
D
E
HE
b2
e1
l1
Rev.2.00 Feb 08, 2005 page 4 of 4
Dimension in Millimeters
Min
0.50
0.25
0.08
0.70
1.10
1.50
Nom
0.60
0.30
0.80
1.20
1.60
0.80
1.70
0.60
Max
0.70
0.35
0.18
0.90
1.30
1.70
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 2.0