ITC135P

ITC135P
Integrated Telecom Circuits
INTEGRATED CIRCUITS DIVISION
Parameter
Relay Blocking Voltage
Relay Load Current
Relay On-Resistance (max)
Bridge Rectifier Reverse Voltage
Darlington Collector Current
Darlington Current Gain
Rating
350
120
15
100
120
10,000
Units
V
mArms / mADC

V
mA
-
The ITC135’s optocoupler provides for half-wave
detection of ringing signals.
Features
•
•
•
•
•
•
•
•
•
•
•
•
3750Vrms Input/Output Isolation
FCC Compatible Part 68
2mW Hook Switch Drive Power (Logic Compatible)
Full-Wave Bridge Rectifier
Darlington Transistor for Electronic Inductor “Dry”
Circuits
Half-Wave Current Detector for Ring Signal or Loop
Current Detect
Includes Zener Diodes
Board Space and Cost Savings
No Moving Parts
Small 16-Pin SOIC Package (PCMCIA Compatible)
Tape & Reel Version Available
JEDEC Standard Pin Out
Applications
• Data/Fax Modem
• Voice Mail Systems
• Telephone Sets
• Computer Telephony Integration
• Cable TV Modems
Description
This Integrated Telecom Circuit combines a single-pole,
normally open (1-Form-A) solid state relay, a bridge
rectifier, a Darlington transistor, an optocoupler, and
Zener diodes into one 16-pin SOIC package,
consolidating designs and reducing component count
in telecom applications.
Approvals
• UL Recognized Component: File E76270
• CSA Certified Component: Certificate 1305490
• EN/IEC 60950-1 Certified Component:
TUV Certificate: B 12 11 82667 002
Ordering Information
Part #
ITC135P
ITC135PTR
Description
16-Pin SOIC (50/Tube)
16-Pin SOIC (1000/Reel)
Pin Configuration
(N/C)
– LED - Form A Relay
– LED - Form A Relay
+ Zener Diode (cathode)
– Zener Diode (anode)
+ Zener Diode (cathode)
Collector - Phototransistor
Emitter - Phototransistor
*
1
16
2
15
PV
3
14
4
13
5
12
6
11
7
10
*
8
9
Output Form A
Output Form A/Bridge Input –/+
Darlington Base
Darlington Emitter
Bridge Output +/Darlington Collector/
+ Zener Diode (cathode)
Bridge Output –/– Zener Diode (anode)
LED - Phototransistor (+)
LED - Phototransistor (–)
Denotes reverse polarity protection diode;
half-wave detection only.
Switching Characteristics
of Normally Open Devices
Form-A
IF
90%
10%
ILOAD
ton
DS-ITC135P_R06
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toff
1
INTEGRATED CIRCUITS DIVISION
ITC135P
Absolute Maximum Ratings @ 25ºC
Parameter
Input Control Current, Relay
Input Control Current, Detector
Total Package Dissipation 1
Isolation Voltage, Input to Output
Operational Temperature
Storage Temperature
1
Ratings
50
100
1
3750
-40 to +85
-40 to +125
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Units
mA
mA
W
Vrms
°C
°C
Derate linearly 8.33 mW / ºC
Total Power Dissipation (PD):
PD=PHOOKSWITCH + PBRIDGE + PDARLINGTON + PLED
PD=(RDS(on)) (I2L) + 2(VF)(IL) + (VCE)(IL) + (VLED)(IF)
WHERE:
RDS(on) = Maximum relay on resistance
IL
= Maximum loop current
VF
= Maximum diode forward voltage
VCE
= Maximum voltage collector to emitter
VLED
= Maximum LED forward voltage
IF
= Maximum LED current
Electrical Characteristics @ 25ºC: Relay Section
Parameter
Output Characteristics
Blocking Voltage (Peak)
Load Current
Continuous
Peak
On-Resistance
Off-State Leakage Current
Switching Speeds
Turn-On
Turn-Off
Output Capacitance
Input Characteristics
Input Control Current (to Activate)
Input Voltage Drop
Reverse Input Voltage
Reverse Input Current
Conditions
Symbol
Min
Typ
Max
Units
-
VL
-
-
350
VP
t=10ms
IL=120mA
VL=350V, TJ=25ºC
IL
ILPK
RON
ILEAK
-
-
120
400
15
1
mArms / mADC
mAP

VL=50V, f=1MHz
ton
toff
COUT
-
25
3
3
-
IL=120mA
IF=5mA
VR=5V
IF
VF
VR
IR
0.9
-
1.2
-
5
1.4
5
10
IF=5mA, VL=10V
A
ms
pF
mA
V
V
A
Electrical Characteristics @25ºC: Darlington Transistor Section
Parameter
Collector-Emitter Voltage
Collector Current, Continuous
Power Dissipation
Off-State Collector-Emitter Leakage Current
DC Current Gain
Saturation Voltage
Total Harmonic Distortion
2
Conditions
IC=10mADC, IB=0mA
VC=3.5V
VCE=10V, IB=0mA
VCE=10VDC, IC=120mA
IC=120mA
IC=40mA, fO=300Hz @ -10dBm
Symbol
VCEO
IC
PD
ICEX
hFE
VCE(sat)
-
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Min
40
10,000
-
Typ
-
Max
120
500
1
1.5
-80
Units
V
mA
mW
A
V
dB
R06
INTEGRATED CIRCUITS DIVISION
ITC135P
Electrical Characteristics @25ºC: Detector Section
Parameter
Output Characteristics
Phototransistor Blocking Voltage
Phototransistor Dark Current
Saturation Voltage
Current Transfer Ratio
Input Characteristics
Input Control Current
Input Voltage Drop
Input Current (Detector Must be Off)
Conditions
Symbol
Min
Typ
Max
Units
IC=10A
VCE=5V, IF=0mA
IF=16mA , IC=2mA
IF=6mA, VCE=0.5V
BVCEO
ICEO
VSAT
CTR
20
33
50
50
0.3
400
500
0.5
-
V
nA
V
%
IC=2mA, VCE=0.5V
IF=5mA
IC=1A, VCE=5V
IF
VF
IF
0.9
5
2
1.2
25
6
1.4
-
mA
V
A
Units
V
V
Electrical Characteristics @25ºC (Unless Otherwise Noted): Bridge Rectifier Section
Parameter
Reverse Voltage
Forward Voltage Drop
Reverse Leakage Current
Conditions
IFD=120mA
TJ=25ºC, VR=100V
TJ=85ºC
Forward Current
Continuous
Peak
Symbol
VRD
VFD
IRD
Min
-
Typ
-
Max
100
1.5
10
50
IFD
-
-
140
500
mA
Symbol
VZ
VZ
CI/O
VI/O
Min
3750
Typ
4.3
15
3
-
Max
-
Units
V
V
pF
Vrms
t=10ms
A
Electrical Characteristics @25ºC: Zener Diodes
Parameter
Zener Voltage Between Pins 4&5 and Pins 6&5
Zener Voltage Between Pins 12&11
Input to Output Capacitance
Input to Output Isolation
Conditions
IZT=20mA
IZT=20mA
-
EXAMPLE CIRCUIT
VCC
1
680
16
2
4.7F
+
15
COUPLING
TRANSFORMER
TIP
10
MOSFET
A
DRIVER
3
OFF-HOOK
CPU
CIRCUIT
14
RING
4
13
5
12
15
B
A
VCC
10F
15V
6
51k
RL
300V SURGE
PROTECTION
TELEPHONE
LINE
25k
4.7F
+
11
B
7
8
10
*
RING
9
18Vx 2
reverse polarity protection diode;
* Denotes
half-wave detection only.
R06
DIGITAL
GROUND
0.47F
250V
8.2k
ISOLATED
GROUND
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3
INTEGRATED CIRCUITS DIVISION
ITC135P
DEVICE PERFORMANCE DATA*
25
20
15
10
5
0
1.17
1.19
1.21
1.23
Power Dissipation (Watts)
Device Count (N)
30
Package Power Derating
1.8
LED Forward Voltage Drop (V)
35
Typical LED Forward Voltage Drop
vs. Temperature
Typical LED Forward Voltage Drop
(N=50, IF=5mA, TA=25ºC)
1.6
1.4
IF=50mA
IF=30mA
IF=20mA
IF=10mA
IF=5mA
1.2
1.0
0.8
-40
1.25
-20
0
20
40
60
80
100
1.00
0.95
0.90
0.85
0.80
0.75
0.70
Operating Area
0.65
0.60
0.55
0.50
25 30 35 40 45 50 55 60 65 70 75 80 85
120
Temperature (ºC)
Temperature (ºC)
LED Forward Voltage Drop (V)
RELAY PERFORMANCE DATA*
15
10
5
0
1.23
1.58
1.93
2.28
2.63
Typical On-Resistance Distribution
(N=50, IL=120mADC, TA=25ºC)
30
20
15
10
5
2.98
25
20
15
10
5
0
0.06
0.10
0.14
0.18
0.22
0.26
8.75
0.30
9.25
9.75
10.25
10.75
Turn-On Time (ms)
Turn-Off Time (ms)
On-Resistance (:)
Typical IF for Switch Operation
(N=50, IL=120mADC, TA=25ºC)
Typical IF for Switch Dropout
(N=50, IL=120mADC, TA=25ºC)
Typical Blocking Voltage Distribution
(N=50, TA=25ºC)
15
10
5
0
30
20
15
10
5
0.42
0.54
0.66
0.78
LED Current (mA)
0.90
1.02
25
20
15
10
5
0
0
0.30
35
Device Count (N)
20
25
Device Count (N)
Device Count (N)
35
0
0.88
25
Typical Turn-Off Time
(N=50, IF=2mA, IL=120mADC, TA=25ºC)
Device Count (N)
20
25
Device Count (N)
Device Count (N)
25
Typical Turn-On Time
(N=50, IF=2mA, IL=120mADC, TA=25ºC)
0.18
0.30
0.42
0.54
0.66
LED Current (mA)
0.78
0.90
365
375
385
395
405
415
425
Blocking Voltage (VP)
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
4
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R06
INTEGRATED CIRCUITS DIVISION
ITC135P
Typical Turn-On Time
vs. LED Forward Current
(IL=120mADC)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
On-Resistance (:)
Turn-Off Time (ms)
0.12
0.10
0.08
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
-40
50
40
60
Percent of Maximum
Load Rating (Typical) (%)
0.30
0.5
0.25
0.20
0.15
0.10
0.05
0
20
40
60
80
-40
100
-20
0
20
40
60
80
100
75
50
25
0
25
50
Temperature (ºC)
Temperature (ºC)
Ambient Temperature (ºC)
Typical IF for Switch Operation
vs. Temperature
(IL=120mADC)
Typical IF for Switch Dropout
vs. Temperature
(IL=120mADC)
Typical Load Current
vs. Load Voltage
(IF=5mA, TA=25ºC)
1.8
1.4
1.4
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
0.2
0
0
0
20
40
60
80
150
1.2
0.2
-20
0
20
40
60
80
Temperature (ºC)
Temperature (ºC)
Typical Blocking Voltage
vs. Temperature
Typical Leakage vs. Temperature
Measured across Pins 15&16
415
410
Leakage (PA)
405
400
395
390
385
380
-20
0
20
40
60
Temperature (ºC)
80
100
100
50
0
-50
-100
-150
-40
100
85
200
Load Current (mA)
1.6
LED Current (mA)
1.6
100
100
0
-40
0
0
-20
80
Load Current
vs. Ambient Temperature
(IF=5mA)
IF=20mA
-40
20
Typical Turn-Off Time
vs. Temperature
(IF=5mA, IL=120mA)
1.0
-40
0
Typical Turn-On Time
vs. Temperature
(IL=120mADC)
IF=10mA
1.8
-20
Temperature (ºC)
1.5
-20
20
LED Forward Current (mA)
2.0
-40
30
LED Forward Current (mA)
IF=5mA
IF=10mA
IF=20mA
2.5
0
50
40
0
0.04
5
50
10
100
-200
-2.0 -1.5
-1.0 -0.5
0
0.5
1.0
1.5
2.0
10s
100s
Load Voltage (V)
Energy Rating Curve
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1.2
1.0
Load Current (A)
Turn-On Time (ms)
0.14
0.06
3.0
LED Current (mA)
60
0.16
0
Blocking Voltage (VP)
Typical On-Resistance
vs. Temperature
(IF=5mA, IL=120mADC)
Typical Turn-Off Time
vs. LED Forward Current
(IL=120mADC)
0.18
Turn-Off Time (ms)
Turn-On Time (ms)
RELAY PERFORMANCE DATA (cont)*
0.8
0.6
0.4
0.2
-40
-20
0
20
40
60
Temperature (ºC)
80
100
0
10Ps 100Ps 1ms 10ms 100ms
1s
Time
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
R06
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5
INTEGRATED CIRCUITS DIVISION
ITC135P
PHOTOTRANSISTOR PERFORMANCE DATA*
24
20
16
12
8
4
IF=1mA
IF=2mA
IF=5mA
IF=10mA
IF=15mA
IF=20mA
7
6
5
4
4.0
Normalized CTR (%)
IF=10mA
IF=5mA
IF=2mA
IF=1mA
Normalized CTR (%)
Collector Current (mA)
4.5
8
28
0
Single Transistor
Typical Normalized CTR vs. IF
(VCE=0.5V)
Single Transistor
Typical Normalized CTR vs. Temperature
(VCE=0.5V)
Typical Transfer Characteristics
Single Transistor Detector
3
2
1
0
1
2
3
4
5
6
7
9
8
0
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
-40
-20
0
20
Collector Emitter Voltage
40
60
80
100
0
120
2
4
6
8
10
12
14
16
18
20
Forward Current (mA)
Temperature (ºC)
Single Transistor - Typical IC vs. IF
(VCE=0.5V)
Collector Current (mA)
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
Forward Current (mA)
DARLINGTON PERFORMANCE DATA*
3.0
2.5
Normalized CTR (%)
14
12
10
8
6
4
Normalized CTR (%)
16
Collector Current (mA)
Darlington Transistor
Typical Normalized CTR vs. Temperature
(VCE=0.8V)
Darlington Transistor
Typical Normalized CTR vs. IF
(VCE=0.8V)
Darlington Transistor - Typical IC vs. IF
(VCE=0.5V)
2.0
1.5
1.0
0.5
2
0
2
4
6
8
10
12
14
16
18
0
20
2
4
Forward Current (mA)
6
8
10
12
1.5
1.0
0.5
14
16
18
-40
20
-20
20
40
60
80
100
V-I Characteristics for Test Circuit
120
Ib=10PA
100
Ib=8PA
80
Ib=6PA
60
Ib=4PA
10
9
VIN (Volts)
40
0
Temperature (ºC)
Forward Current (mA)
Typical Transfer Characteristics
Darlington Transistor
Collector Current (mA)
2.0
0
0
0
IF=1mA
IF=2mA
IF=5mA
IF=10mA
IF=15mA
IF=20mA
2.5
Ib=2PA
20
8
7
6
5
4
0
2
4
6
8
10
20
Collector Emitter Voltage
40
60
80
100
120
IOUT (mA)
* The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
6
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R06
INTEGRATED CIRCUITS DIVISION
ITC135P
Manufacturing Information
Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the
latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper
operation of our devices when handled according to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according
to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device
Moisture Sensitivity Level (MSL) Rating
ITC135P
MSL 1
ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
Device
Maximum Temperature x Time
ITC135P
260ºC for 30 seconds
Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable. Since IXYS Integrated Circuits Division employs the use of silicone coating as an
optical waveguide in many of its optically isolated products, the use of a short drying bake could be necessary if a
wash is used after solder reflow processes. Chlorine- or Fluorine-based solvents or fluxes should not be used.
Cleaning methods that employ ultrasonic energy should not be used.
R06
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7
INTEGRATED CIRCUITS DIVISION
ITC135P
MECHANICAL DIMENSIONS
ITC135P
10.160±0.381
(0.400±0.015)
PCB Land Pattern
0.254 ±0.0127
(0.010±0.0005)
PIN 16
10.363±0.127
(0.408±0.005)
0.635 X 45°
(0.025 X 45°)
7.493±0.127
(0.295±0.005)
1.016 TYP
(0.040 TYP)
9.30
(0.366)
1.90
(0.075)
PIN 1
1.27
(0.050)
1.270 TYP
(0.050 TYP)
2.057±0.051
(0.081±0.002)
0.406 TYP
(0.016 TYP)
8.890 TYP
(0.350 TYP)
0.508±0.1016
(0.020±0.004)
0.60
(0.024)
Lead to Package Standoff:
MIN: 0.0254 (0.001)
MAX: 0.102 (0.004)
DIMENSIONS
mm
(inches)
NOTES:
1. Coplanarity = 0.1016 (0.004) max.
2. Leadframe thickness does not include solder plating
(1000 microinch maximum).
ITC135PTR Tape & Reel
330.2 DIA.
(13.00 DIA.)
W=16
(0.630)
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
B0=10.70
(0.421)
K0=3.20
(0.126)
A0=10.90
(0.429)
P=12.00
(0.472)
K1=2.70
(0.106)
Embossed Carrier
Embossment
NOTES:
1. All dimensions carry tolerances of EIA Standard 481-2
2. The tape complies with all “Notes” for constant dimensions
listed on page 5 of EIA-481-2
Dimensions
mm
(inches)
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its
products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
8
Specification: DS-ITC135P_R06
©Copyright 2013, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
9/27/2013