TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SM05 through SM36 SM Series 400W TVS Diode Array RoHS Pb GREEN Description The SM series can absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international standard without performance degradation and safely dissipate up to 24A of 8/20us induced surge current (IEC61000-4-5) with very low clamping voltages. Pinout and Functional Block Diagram Features (AEC-Q101 qualified) 1 • ESD, IEC61000-4-2, ±30kV contact, ±30kV air • Working voltages: 5V, 12V, 15V, 24V and 36V • EFT, IEC61000-4-4, 50A (5/50ns) • Low clamping voltage • Lightning, IEC61000-4-5, 24A (tP=8/20μs, SM05) • AEC-Q101 qualified (SOT23-3 package) • Low leakage current 3 2 Applications • Industrial Equipment (RS-232, RS-485) • Test and Medical Equipment Life Support Note: Not Intended for Use in Life Support or Life Saving Applications • Legacy Ports • Point-of-Sale Terminals • Security and Alarm Systems • Motor Controls The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. RS-232 Application Example RS-232 Port Transceiver RD TD RTS IC CTS DSR DTR SM15 (x6) Case GND © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/05/13 (bidireconal implementaon) 5 SM Series The SM series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SM05 through SM36 Absolute Maximum Ratings Symbol Parameter Value Units 400 W Operating Temperature -40 to 125 °C Storage Temperature -55 to 150 °C PPk Peak Pulse Power (tp=8/20μs) TOP TSTOR Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Storage Temperature Range SM05 Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Reverse Standoff Voltage VRWM IR≤1μA VR IR=1mA ILEAK Reverse Voltage Drop Leakage Current VC Clamp Voltage1 Max Units 5.0 V VR=5V 1.0 μA IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 9.8 V Typ 6.0 V IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 Dynamic Resistance2 RDYN TLP, tp=100ns, I/O to GND Peak Pulse Current (8/20µs)1 Ipp tp=8/20µs ESD Withstand Voltage1 VESD Diode Capacitance1 Min 13.0 0.19 V Ω 24.0 A IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV CI/O-GND Reverse Bias=0V, f=1MHz 400 pF CI/O-I/O Reverse Bias=0V, f=1MHz 350 pF SM12 Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Reverse Standoff Voltage VRWM IR≤1μA VR IR=1mA ILEAK VR=12V Reverse Voltage Drop Leakage Current VC Clamp Voltage1 Max Units 12.0 V 1.0 μA IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 18.5 V IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 22.5 V RDYN TLP, tp=100ns, I/O to GND Peak Pulse Current (8/20µs)1 Ipp tp=8/20µs ESD Withstand Voltage1 VESD Dynamic Resistance Diode Capacitance1 6 2 Min Typ 13.3 V 0.25 Ω 17.0 A IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV CI/O-GND Reverse Bias=0V, f=1MHz 150 pF CI/O-I/O Reverse Bias=0V, f=1MHz 120 pF © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/05/13 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SM05 through SM36 SM15 Electrical Characteristics (TOP=25ºC) Symbol Test Conditions VRWM IR≤1μA VR IR=1mA Reverse Voltage Drop Leakage Current ILEAK VC Clamp Voltage1 Typ Max Units 15.0 V 16.7 V VR=15V 1.0 μA IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 24.0 V IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 Dynamic Resistance2 RDYN TLP, tp=100ns, I/O to GND Peak Pulse Current (8/20µs)1 Ipp tp=8/20µs ESD Withstand Voltage1 VESD Diode Capacitance1 Min 30.0 0.30 SM Series Parameter Reverse Standoff Voltage V Ω 12.0 A IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV CI/O-GND Reverse Bias=0V, f=1MHz 100 pF CI/O-I/O Reverse Bias=0V, f=1MHz 75 pF Max Units 24.0 V SM24 Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Reverse Standoff Voltage VRWM IR≤1μA VR IR=1mA Reverse Voltage Drop Leakage Current ILEAK VC Clamp Voltage1 Typ 26.7 V VR=24V 1.0 μA IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 36.0 V IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 Dynamic Resistance2 RDYN TLP, tp=100ns, I/O to GND Peak Pulse Current (8/20µs)1 Ipp tp=8/20µs ESD Withstand Voltage1 VESD Diode Capacitance1 Min 42.0 0.50 V Ω 7.0 A IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV CI/O-GND Reverse Bias=0V, f=1MHz 65 pF CI/O-I/O Reverse Bias=0V, f=1MHz 50 pF Max Units 36.0 V SM36 Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Reverse Standoff Voltage VRWM IR≤1μA VR IR=1mA ILEAK VR=36V 1.0 μA IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 52.0 V IPP=4A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 62.0 V Reverse Voltage Drop Leakage Current VC Clamp Voltage1 RDYN TLP, tp=100ns, I/O to GND Peak Pulse Current (8/20µs)1 Ipp tp=8/20µs ESD Withstand Voltage1 VESD Dynamic Resistance Diode Capacitance1 2 Min Typ 40.0 V 0.65 Ω 5.0 A IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV CI/O-GND Reverse Bias=0V, f=1MHz 50 pF CI/O-I/O Reverse Bias=0V, f=1MHz 40 pF Note: 1 2 Parameter is guaranteed by design and/or device characterization. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/05/13 7 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SM05 through SM36 Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 10 90 % of Rated Power I PP Peak Pulse Power - P pk (kW) 100 1 0.1 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 1000 Pulse Duration - t p (µs) Pulse Waveform 0 25 125 150 SM05 18 90% 16 80% 14 70% TLP Current (A) Percent of IPP 100 20 100% 60% 50% 40% 12 10 8 30% 6 20% 4 10% 2 0.0 5.0 10.0 15.0 20.0 25.0 0 30.0 0 Time (μs) 16 16 14 14 TLP Current (A) TLP Current (A) 18 12 10 8 4 2 2 0 TLP Voltage (V) 12 SM15 8 6 15 10 10 4 10 8 12 6 5 6 20 18 0 4 SM15 Transmission Line Pulsing(TLP) Plot SM12 20 2 TLP Voltage (V) SM12 Transmission Line Pulsing(TLP) Plot 8 75 SM05 Transmission Line Pulsing(TLP) Plot 110% 0% 50 Ambient Temperature - T A (oC) 20 25 0 0 5 10 15 20 25 30 TLP Voltage (V) © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/05/13 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SM05 through SM36 SM24 Transmission Line Pulsing(TLP) Plot SM24 18 16 16 14 14 TLP Current (A) 18 12 10 8 12 10 8 6 6 4 4 2 2 0 0 5 10 15 20 SM36 20 25 30 35 SM Series 20 TLP Current (A) SM36 Transmission Line Pulsing(TLP) Plot 0 40 0 5 10 15 20 TLP Voltage (V) 25 30 35 40 45 50 55 TLP Voltage (V) Soldering Parameters Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds 260 Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds tL Ramp-do Ramp-down Preheat TS(min) tS time to peak temperature Time °C Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Ordering Information Part Number Package Marking Min. Order Qty. SM05-02HTG SOT23-3 M05 3000 SM12-02HTG SOT23-3 M12 3000 SM15-02HTG SOT23-3 M15 3000 SM24-02HTG SOT23-3 M24 3000 SM36-02HTG SOT23-3 M36 3000 © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/05/13 Critical Zone TL to TP Ramp-up TL TS(max) 25 Peak Temperature (TP) +0/-5 tP TP Temperature Reflow Condition Product Characteristics Lead Plating Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. 9 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SM05 through SM36 Part Marking System Part Numbering System SM xx –02 H T G TVS Diode Arrays (SPA® Diodes) Series Working Voltage Mxx G= Green T= Tape & Reel Package H: SOT23-3 Number of Channels Package Dimensions — SOT23-3 Package Pins JEDEC b 3 502B 1 E1 E Recommended Pad Layout 2 e P e1 D M P A A1 C N 0 L1 0 A A1 b c D E E1 e e1 L1 M N O P M N SOT23-3 3 TO-236 Millimeters Min Max 0.89 1.12 0.01 0.1 0.3 0.5 0.08 0.2 2.8 3.04 2.1 2.64 1.2 1.4 0.95 BSC 1.90 BSC 0.54 REF 2.29 0.95 0.78 0.78 Inches Min Max 0.035 0.044 0.0004 0.004 0.012 0.020 0.003 0.008 0.110 0.120 0.083 0.104 0.047 0.055 0.038 BSC 0.075 BSC 0.021 REF .090 0.038 .030TYP .030TYP Millimetres Inches Embossed Carrier Tape & Reel Specification — SOT23-3 Symbol 8mm TAPE AND REEL GENERAL INFORMATION 1. 3000 PIECES PER REEL. 2. ORDER IN MULTIPLES OF FULL REELS ONLY. 3. MEETS EIA-481 REVISION "A" SPECIFICATIONS. ACCESS HOLE 14.4mm SOT23-3 (8mm POCKET PITCH) 13mm 180mm 60mm USER DIRECTION OF FEED Min Max Min Max E 1.65 1.85 0.065 0.073 F 3.40 3.60 0.134 0.142 P2 1.90 2.10 0.075 0.083 D 1.40 1.60 0.055 0.063 P0 3.90 4.10 0.154 0.161 W 7.70 8.30 0.303 0.327 P 3.90 4.10 0.154 0.161 A0 3.05 3.25 0.120 0.128 B0 2.67 2.87 0.105 0.113 K0 1.12 1.32 0.044 0.052 t 0.22 0.24 0.009 0.009 PIN 1 8.4mm 10 © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/05/13