TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series SPxx Series 100W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The SPxx-01WTG-C-HV series is designed to improve ESD protection in portable applications, LED backlighting modules, and low speed I/Os. It will protect sensitive equipment from damage due to electrostatic discharge (ESD) and other overvoltage transients. The SPxx-01WTG-C-HV series can safely absorb repetitive ESD strikes above the maximum level of the IEC610004-2 international standard (Level 4, ±8kV contact discharge) without performance degradation and safely dissipate up to 8A (SP12-01WTG-C-HV) of induced surge current (IEC61000-4-5, tP=8/20μs) with very low clamping voltages. Pinout Features • ESD, IEC61000-4-2, 1 ±30kV contact, ±30kV air • EFT, IEC61000-4-4, 40A (5/50ns) Functional Block Diagram • Halogen free, Lead free and RoHS compliant Applications 2 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/30/16 • Low leakage current • Lightning, IEC61000-4-5 2nd edition, 8A (tP=8/20μs, SP12-01WTG-C-HV) 2 1 • Low clamping voltage • LED Backlighting Modules • Mobile & Handhelds • Portable Instrumentation • RS232 / RS485 • General Purpose I/O TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series Absolute Maximum Ratings Symbol Parameter Value Units Ppk Peak Pulse Power (tp=8/20μs) 100 W TOP Operating Temperature -40 to 125 °C TSTOR Storage Temperature -55 to 150 °C Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Storage Temperature Range SP12-01WTG-C-HV Electrical Characteristics (TOP=25ºC) Parameter Reverse Standoff Voltage Symbol Test Conditions VRWM IR≤1μA, 1 pin to GND Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND Leakage Current ILEAK VR=12V, 1 pin to GND Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance1 VC Min Typ Max 12.0 13.3 V V 0.1 IPP=1A, tp=8/20µs, Fwd Units 16 μA V IPP=8A, tP=8/20μs, Fwd 19 V RDYN TLP, tp=100ns, 1 pin to GND 0.4 Ω Ipp tp=8/20µs VESD CD-GND 8.0 A IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Reverse Bias=0V, f=1MHz 26 30 pF Max Units Note: 1 Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns SP15-01WTG-C-HV Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA, 1 pin to GND Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND Leakage Current ILEAK Reverse Standoff Voltage Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance1 VC RDYN Ipp VESD CI/O-GND Min Typ 15.0 16.7 V V VR=15V, 1 pin to GND 0.1 IPP=1A, tp=8/20µs, Fwd 21 μA V IPP=5A, tp=8/20µs, Fwd 27 V TLP, tp=100ns, 1 pin to GND 0.43 Ω tp=8/20µs 5.0 IEC61000-4-2 (Contact Discharge) ±30 IEC61000-4-2 (Air Discharge) ±30 A kV kV Reverse Bias=0V, f=1MHz 21 24 pF Note: Parameter is guaranteed by design and/or device characterization. Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns 1 2 © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/30/16 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series SP24-01WTG-C-HV Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA, 1 pin to GND Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND Leakage Current ILEAK Reverse Standoff Voltage Dynamic Resistance2 Diode Capacitance Units 24.0 V 26.7 V VR=24V, 1 pin to GND 0.1 μA 32 V IPP=3.0A, tp=8/20µs, Fwd 40 V TLP, tp=100ns, 1 pin to GND 0.7 Ω Ipp tp=8/20µs VESD 3.0 A IEC61000-4-2 (Contact Discharge) ±18 kV IEC61000-4-2 (Air Discharge) ±24 kV CI/O-GND 1 Max RDYN Peak Pulse Current ESD Withstand Voltage1 Typ IPP=1A, tp=8/20µs, Fwd VC Clamp Voltage1 Min Reverse Bias=0V, f=1MHz 13 17 pF Note: 1 2 Parameter is guaranteed by design and/or device characterization. Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns SP36-01WTG-C-HV Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA, 1 pin to GND Reverse Breakdown Voltage VBR IR=1mA, 1 pin to GND Leakage Current ILEAK VR=36V, 1 pin to GND VC IPP=1A, tp=8/20µs, Fwd 48 V RDYN TLP, tp=100ns, 1 pin to GND 1.4 Ω Reverse Standoff Voltage Clamp Voltage1 Dynamic Resistance 2 Peak Pulse Current Ipp ESD Withstand Voltage1 Diode Capacitance1 VESD Min Typ Max Units 36.0 V 0.1 μA 40.0 V tp=8/20µs 1.5 A IEC61000-4-2 (Contact Discharge) ±10 kV IEC61000-4-2 (Air Discharge) ±15 kV CI/O-GND Reverse Bias=0V, f=1MHz 10 13 pF Note: 1 2 Parameter is guaranteed by design and/or device characterization. Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 100 90 % of Rated Power I PP Peak Pulse Power - Ppk (kW) 10 1 0.1 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 Pulse Duration - t p (µs) © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/30/16 1000 0 25 50 75 100 Ambient Temperature - T A (oC) 125 150 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series SP15-01WTG-C-HV Transmission Line Pulsing(TLP) Plot 20 20 18 18 16 16 14 14 TLP Current (A) TLP Current (A) SP12-01WTG-C-HV Transmission Line Pulsing(TLP) Plot 12 10 8 6 10 8 6 4 4 2 2 0 0 10 20 30 TLP Volts (V) 40 0 50 SP24-01WTG-C-HV Transmission Line Pulsing(TLP) Plot 0 10 20 30 40 TLP Volts (V) 50 60 SP36-01WTG-C-HV Transmission Line Pulsing(TLP) Plot 20 14 18 12 16 14 TLP Current (A) TLP Current (A) 12 12 10 8 6 4 10 8 6 4 2 2 0 0 0 10 20 30 40 50 TLP Volts (V) 60 70 80 0 20 40 60 80 100 120 TLP Volts (V) Pulse Waveform 110% 100% 90% Percent of IPP 80% 70% 60% 50% 40% 30% 20% 10% 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (μs) © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/30/16 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series Soldering Parameters Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Product Characteristics tP TP Temperature Reflow Condition Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 tS time to peak temperature Time Ordering Information Part Number Package Marking Min. Order Qty. SP12-01WTG-C-HV FLIPCHIP 2 10000 SP15-01WTG-C-HV FLIPCHIP 5 10000 Molded Epoxy SP24-01WTG-C-HV FLIPCHIP 4 10000 UL 94 V-0 SP36-01WTG-C-HV FLIPCHIP 6 10000 Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Flammability Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Part Marking System Part Numbering System SP** -01 W T G – C – HV 2 TVS Diode Arrays (SPA® Diodes ) 2: SP12-01WTG-C-HV 5: SP15-01WTG-C-HV 4: SP24-01WTG-C-HV 6: SP36-01WTG-C-HV Voltage Number of Channels Package W:Flipchip © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/30/16 High Voltage Bidirectional G= Green T= Tape & Reel TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPxx-01WTG-C-HV Series Package Dimensions — FLIPCHIP 0201 Flipchip Symbol Millimeters Max Min Max D 0.605 0.655 0.0238 0.0258 E 0.305 0.355 0.0120 0.0140 D1 0.145 0.155 0.0057 0.0061 E1 0.245 0.255 0.0096 0.400 BSC D2 TOP VIEW BOTTOM VIEW 0.298 SIDE VIEW Inches Min 0.0100 0.0157 BSC A 0.273 0.329 0.0107 0.0130 A2 0.265 0.315 0.0104 0.0124 A1 0.008 0.014 0.0003 0.0006 0.195 0.400 0.325 0.595 Recommended Soldering Pad Layout (mm) Embossed Carrier Tape & Reel Specification — FLIPCHIP P1 P0 D P2 E F W D1 T A0 Symbol Millimeters A0 0.41+/-0.03 B0 0.70+/-0.03 D ø 1.50 + 0.10 D1 ø 0.20 +/- 0.05 E 1.75+/-0.10 F 3.50+/-0.05 K0 0.38+/-0.03 P0 4.00+/-0.10 P1 2.00+/-0.05 P2 2.00+/-0.05 W 8.00 + 0.30 -0.10 T 0.23+/-0.02 K0 B0 © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/30/16