BC857BV SOT-563 Dual Transistor (PNP) SOT-563 1.600 Features 1.200 1.600 Epitaxial Die Construction Complementary NPN Types Available 0.220 (BC847BV) 0.500 Ultra-Small Surface Mount Package 0.565 Marking: K5V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted ) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.15 W RθJA Thermal Resistance. Junction to Ambient Air 833 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-1μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 DC current gain hFE VCE=-5V,IC=-2mA -15 220 nA 475 VCE(sat)(1) IC=-10mA,IB=-0.5mA -0.1 V VCE(sat)(2) IC=-100mA,IB=-5mA -0.4 V VBE(sat)(1) IC=-10mA,IB=-0.5mA -0.7 V VBE(sat)(2) IC=-100mA,IB=-5mA -0.9 V Collector-emitter saturation voltage Base-emitter saturation voltage VBE(1) VCE=-5V,IC=-2mA VBE(2) VCE=-5V,IC=-10mA -0.6 -0.75 V -0.82 V Base-emitter voltage Transition frequency fT Collector output capacitance Cob Noise figure NF VCE=-5V,IC=-10mA,f=100MHz VCB=-10V,IE=0,f=1MHz VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz 100 MHz 4.5 pF 10 dB BC857BV SOT-563 Dual Transistor (PNP) Typical Characteristics