2SB1184(PNP) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol TO-252-2L Dimensions in inches and (millimeters) unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -1 µA DC current gain hFE(1) VCE=-3V, IC=-0.5A 82 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-0.2A Base-emitter saturation voltage VBE(sat) IC=-1.5A, IB=-0.15A fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking 390 -1 V -1.2 V VCE=-5V, IC=-0.5A, f=30MHz 70 MHz VCB=-10V, IE=0, f=1MHz 50 pF hFE(1) P Q R 82-180 120-270 180-390 2SB1184(PNP) TO-251/TO-252-2L Transistor Typical Characteristics 2SB1184(PNP) TO-251/TO-252-2L Transistor