2SA1179

2SA1179
SOT-23 Transistor(PNP)
1. BASE
SOT-23
2. EMITTER
3. COLLECTOR
Features
—
High breakdown voltage
MARKING: M
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-55
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-150
mA
Pc
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-10u A,IE=0
-55
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10 u A,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-35V,IE=0
-0.1
uA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1
uA
DC current gain
hFE
VCE=-6V,IC=-1mA
200
400
Collector-emitter saturation voltage
VCE(sat)
IC=-50mA,IB=-5mA
-0.5
V
Base -emitter saturation voltage
VBE(sat)
IC=-50mA,IB=-5mA
-1.0
V
fT
VCE=-6V,IC=-10mA
Transition frequency
Collector output capacitance
Cob
VCB=-6V,IE=0,f=1MHz
180
MHz
4
pF
2SA1179
SOT-23 Transistor(PNP)
Typical Characteristics