1SS132 Small Signal Switching Diodes REVERSE VOLTAGE : 50 V CURRENT: 120 mA DO - 35(GLASS) Features Glass sealed envelope. (MSD) High reliability Mechanical Data Case: DO-35, glass case Dimensions in millimeters Polarity: Color band denotes cathode Weight: 0.005 ounces, 0.14 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. 1SS132 UNITS Maximum DC reverse voltage VR 50 V Maximumrecurrent reverse voltage VRM 55 V Power dissipation Ptot 300 mW Maximum average forw ard rectified current IF(AV) 120 mA IFSM 500 mA VF 1.2 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage @ 100mA Maximum reverse current at rated DC blocking voltage @TA=25 @TA=150 IR 0.5 Reverse recovery time @IF=10mA,VR=6V,RL=50Ω t rr 4.0 Operating junction temperature range TJ - 55 ---- + 175 TSTG - 55 ---- + 175 Storage temperature range μA 50 ns 1SS132 Small Signal Switching Diodes Ratings AND Charactieristic Curves FIG.2 -- SURGE CURRENT CHARACTERISTICS 10 500 1.0 TJ=25 Pulse Width=300 µS SURGE CURRENT, m A INSTANTANEOUS FORWARD CURRENT,AMPERES FIG.1 --FORWARD CHARACTERISTICS 0.1 0.01 TJ=125 8.3ms Single Half Sine-Wave 250 0 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 2.0 2 4 8 10 20 40 FORWARD VOLTAGE, V INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.4 -- REVERSE RECOVERY TIME CHARACTERISTICS REVERSE RECOVERY TIME, ns REVERSE CURRENT, nA FIG.3 -- REVERSE CHARACTERISTICS 10000 2000 100 1000 75 200 100 50 20 T A= 2 5 10 2 1 0 20 40 60 80 1 0 0 1 2 0 140 FORWARD VOLTAGE, V 5 VR=6V Irr=1/10IR 4 3 2 1 0 0 4 8 12 16 FORWARD CURRENT, mA FIG.5 -- REVERSE RECOVERY TIME (trr) MEASUREMENT CIRCUIT 0.01F D.U.T 5K PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE 20 60 80 100