SY LL4148

LL4148/MM4148
SMALL SIGNAL SWITCHING DIODE
FEATURES
MINI MELF
Silicon epitaxial planar diode
Fast switching diodes
500mw power dissipation
High temperature soldering guaranteed
250 C/10S at terminals
0.063(1.6)
0.055(1.4) DIA.
0.020(0.5)
0.012(0.3)
0.020(0.5)
0.012(0.3)
0.146(3.7)
0.130(3.3)
MECHANICAL DATA
Case: MINI MELF glass sealed envelope.
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.002 ounce, 0.05 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
LL4148/MM4148
UNITS
VRRM
VRMS
100
75
VOLTS
VOLTS
I(AV)
150
mAmps
IFSM
500
mAmps
VF
1.0
Volts
IR
5.0
50
uA
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 10mA
Maximum DC reverse current
TA=25 C VR=75V
at rated DC blocking voltage
TA=100 C VR=20V
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Operating junction and storage temperature range
NOTES:
1.Test condition:IF=10mA,IR=10mA,Irr=1mA,VR=6V,RL=100W.
2.Measured at 1.0 MHz and applied reverse voltage of 4.0 volts
trr
4.0
ns
CJ
TJ,TSTG
4.0
-65 to +200
pF
C
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RATINGS AND CHARACTERISTIC CURVES LL4148/MM4148
FIG. 2-REVERSE CURRENT VERSUS CONTINUOUS
REVERSE VOLTAGE (TYPICAL VALUES)
800
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
P,POWER DISSIPATION,MILLIWATTS
FIG. 1-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
700
600
500
400
300
200
100
0
0
200 C
100
AMBIENT TEMPERATURE, C
1
0.1
0.01
TJ=25 C
0.001
0.0001
40
60
80
100
120
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 3-FORWARD CHARACTERISTICS
FIG. 4-RELATIVE CAPACTANCE VERSUS
REVERSE VOLTAGE
Ctot(vR)
RELATIVE CAPACTANCE
Ctot(0v)
14
12
10
8
6
4
2
0
0
1
2V
INSTANTANEOUS FORWARD VOLEAGE,
V0LTS
1.2
1.0
0.8
0.6
0.4
0
5
10V
REVERSE VOLTAGE,VOLTS.
FIG. 5-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
IFRM,PEAK FORWARD CURRENT,AMPERES
INSTANTANEOUS FORWARD
CURRENT,MILLIAMPERES
16
100
n=tp/T
V=tp/T T=1/fp
tp
10
IFRM
n=0
0.1
T
0.2
1
0.5
0.1
0.01
0.1
1
10
tp,PULSE DURATION,ms
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100
1000ms