August 2009 DUT1506 – 600V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE General Description Features The DUT1506 is a GaAs P-I-N Rectifier. It uses a patented liquid phase epitaxy (LPE) construction to provide temperature performance above current Silicon, Silicon Carbide and Gallium Nitride products of a similar specification. The device is able to function stably well above the maximum TJ of more traditional diodes of this type while maintaining parity of performance in terms of key parameters such as recovery time and forward voltage. Applications Package Types TO-257 High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the full specified temperature range Lower leakage current at all operating temperatures Very low capacitance TO-276AB (SMD) High temperature electronics Power Modules Hybrid circuits BARE DIE Thermal Characteristics SYMBOL PARAMETER RATINGS UNITS RθJC MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE TO-276Al 3.51 °C/W RθJC MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE TO-257AlN 1.45 °C/W RθJC MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE TO-276AB 1.24 °C/W TO-257Al / TO-257AlN TO-276AB BARE DIE (3.1mm²) 1 2 1 2 3 1. 2. 3. 1 2 3 PACKAGE 1 3 ANODE COMMON CATHODE COMMON CATHODE 1. 2. CATHODE ANODE (DIE BACKSIDE) PACKAGE TEMP RANGE DUT1506AL TO-257Al -65 TO 260°C DUT1506ALN TO-257AlN -65 TO 260°C DUT1506S TO-276AB -65 TO 260°C DUT1506-AG BARE DIE -65 TO 260°C DUT1506-GG BARE DIE -65 TO 260°C Europe: [email protected] USA : [email protected] China: [email protected] CATHODE ANODE CATHODE Rev. 1.4 7th August 2009 ORDERING PART # 1 © Mintech Semiconductors Ltd www.mintech.co.uk Absolute Maximum Ratings SYMBOL PARAMETER RATINGS UNITS VRRM PEAK REPETETIVE REVERSE VOLTAGE 600 V VRWM WORKING PEAK REPETETIVE REVERSE VOLTAGE 600 V VR DC BLOCKING VOLTAGE 600 V IF(AV) AVERAGE RECTIFIED FORWARD CURRENT @ 260°C 15 A IFSM NON-REPETETIVE PEAK SURGE CURRENT 60Hz SINGLE HALF-SINE WAVE 150 A TJ ,TSTG OPERATING AND STORAGE TEMPERATURE RANGE -65 to +260 °C Electrical Characteristics SYMBOL PARAMETER MIN TYP MAX UNITS VFM1 IF=15A TC = 25°C TC = 175°C TC = 260°C - 1.8 2.1 2.3 1.9 2.2 2.5 V IRM1 VR=600V TC = 25°C TC = 175°C TC = 260°C - 0.40 125 1000 1 130 1100 µA IF=1A, di/dt = 200 A/µs, VR=30V TC = 25°C TC = 175°C TC = 260°C - 30 30 30 35 35 35 ns tRR IRR QRR IF=15A, di/dt = 200 A/µs, VR=200V TC = 25°C - 65 9 300 75 10 370 ns A nC tRR IRR QRR IF=15A, di/dt = 200 A/µA, VR=200V TC = 175°C - 65 9 300 75 10 370 ns A nC tRR IRR QRR IF=15A, di/dt = 200 A/µA, VR=200V TC = 260°C - 65 9 300 75 10 370 ns A nC CJ TJ= 25°C, f = 1MHz, VR = 200V - - 18 22 pF W AVL AVALANCHE ENERGY ( L=2Mh ) - 10 - - mJ tRR Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Rev. 1.4 7th August 2009 2 © Mintech Semiconductors Ltd www.mintech.co.uk Typical Performance Characteristics 260°C 25°C 175°C 260°C 175°C 25°C TBA – IRR VS DI/DT 25°C Rev. 1.4 7th August 2009 3 © Mintech Semiconductors Ltd www.mintech.co.uk Mechanical Dimensions TO-257 Note: All dimensions in millimetres Pins must not be bent less than 4.0mm from case Finish – Electroless Ni 3-5 µm thick TO-276AB(SMD) Note: All dimensions in millimeters [inches] Rev. 1.4 7th August 2009 4 © Mintech Semiconductors Ltd www.mintech.co.uk Mechanical Dimensions Bare Die PASSIVATION EPITAXIAL P-I-N LAYER CATHODE CATHODE ANODE p+ SUBSTRATE METALISATION 3.1mm 2.6mm R = 0.3mm DIMENSIONS 3.1mm x 3.1mm 3.1mm 2.6mm CATHODE THICKNESS 400µm ± 20µm Note: For custom thicknesses please contact us TOP METAL Al OR Au (See order code below) BACK METAL Au DUT1506-AG Al TOPSIDE Au BACKSIDE DUT1506-GG Au TOPSIDE Au BACKSIDE Waffle Pack Dimensions Note: For other supply formats please contact us A X Y Z POCKET DETAILS X = 3.20mm ±0.05mm pocket size Y = 3.20mm ±0.05mm pocket size Z = 1.19mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 10 X 10 (100) OVERALL TRAY SIZE X Size = 50.80mm ±0.10mm Height = 3.96mm +0.05mm -0.08mm Flatness = 0.10mm Rev. 1.4 7th August 2009 5 © Mintech Semiconductors Ltd www.mintech.co.uk DISCLAIMER MINTECH SEMICONDUCTORS IN PARTNERSHIP WITH CLIFTON RESERVE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. CLIFTON AS AND MINTECH SEMICONDUCTORS DO NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DO WE CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY MINTECH SEMICONDUCTORS & CLIFTON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF MINTECH SEMICONDUCTORS AND CLIFTON. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Rev. 1.4 7th August 2009 6 © Mintech Semiconductors Ltd www.mintech.co.uk