2N5564 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5564 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5564 HIGH GAIN 7500µmho MINIMUM LOW “ON” RESISTANCE 100Ω MAXIMUM ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) The 2N5564 are monolithic dual JFETS. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The 2N5564 is a direct replacement for discontinued Siliconix and National 2N5564. Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Device Dissipation (Each transistor) Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source Gate to Gate The hermetically sealed TO-71 is well suited for military and harsh environment applications. (See Packaging Information). 2N5564 Applications: Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 – VGS2 | Differential Gate to Source Cutoff Voltage ∆|VGS1 – VGS2 | / ∆T Differential Gate to Source Cutoff Voltage Change with Temperature IDSS1 / IDSS2 Gate to Source Saturation Current Ratio |IG1 – IG2 | Differential Gate Current gfs1 / gfs2 MIN ‐‐ ‐‐ TYP ‐‐ ‐‐ MAX 5 10 ‐65°C to +200°C ‐55°C to +125°C 325mW 650mW 50mA ‐40V ‐40V ±80V UNITS mV µV/°C CONDITIONS VDG = 15V, ID = 2mA VDG = 15V, ID = 2mA TA = ‐55°C to +125°C VDS = 10V, VGS = 0V Click To Buy Forward Transconductance Ratio2 0.95 ‐‐ 1 % ‐‐ ‐‐ 20 nA 0.95 ‐‐ 1 % VDG = 10V, ID = 5mA TA = +125°C VDS = 15V, ID = 2mA, f = 1kHz ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Gate to Source Breakdown Voltage ‐40 VGS(off) Gate to Source Cutoff Voltage ‐0.5 VGS(F) Gate to Source Forward Voltage ‐‐ IDSS Gate to Source Saturation Current3 5 IGSS Gate Leakage Current3 ‐‐ gfs Forward Transconductance 7500 7000 gos Output Conductance ‐‐ CISS Input Capacitance ‐‐ CRSS Reverse Transfer Capacitance ‐‐ NF Noise Figure ‐‐ Equivalent Input Noise Voltage ‐‐ _ en TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX. ‐3 1 30 ‐200 12500 ‐‐ 45 5 12 1 50 UNITS V mA nA µS pF dB nV/√Hz CONDITIONS IG = ‐1µA, VDS = 0V VDS = 15V, ID = 1nA IG = 2mA, VDS = 0V VDS = 15V, VGS = 0V VGS = ‐20V, VDS = 0V, 150°C VDG = 15V, ID= 2mA, f = 1kHz VDG = 15V, ID= 2mA, f = 100MHz VDG = 15V, ID= 2mA, f = 1kHz VDG = 15V, ID= 2mA, f = 100MHz VDG = 15V, ID = 2mA, f = 10Hz, RG = 1MΩ VDG = 15V, ID = 2mA, f = 10Hz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator TO-71 (Top View) Available Packages: Please contact Micross for full package and die dimensions: 2N5564 in TO-71 2N5564 available as bare die Email: [email protected] Web: www.micross.com/distribution.aspx This is trial version If you want get full version, please register it, thank you. www.verypdf.com Demo (http://www.verypdf.com) Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.