J110 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J110 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. FEATURES DIRECT REPLACEMENT FOR SILICONIX J110 LOW ON RESISTANCE rDS(on) ≤ 18Ω FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐55°C to +150°C J110 Benefits: Operating Junction Temperature ‐55°C to +150°C Low On Resistance Maximum Power Dissipation Low insertion loss Continuous Power Dissipation 350mW Low Noise MAXIMUM CURRENT J110 Applications: Gate Current (Note 1) 50mA Analog Switches MAXIMUM VOLTAGES Commutators Gate to Drain Voltage VGDS = ‐25V Choppers Gate to Source Voltage VGSS = ‐25V J110 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐0.5 ‐‐ ‐4 VDS = 5V, ID = 1µA V VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 ‐‐ IG = 1mA, VDS = 0V IDSS Drain to Source Saturation Current (Note 2) 10 ‐‐ ‐‐ mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐0.01 ‐3 VGS = ‐15V, VDS = 0V nA IG Gate Operating Current ‐‐ ‐0.01 ‐‐ VDG = 10V, ID = 10mA ID(off) Drain Cutoff Current ‐‐ 0.02 3 VDS = 5V, VGS = ‐10V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 18 Ω VGS = 0V, VDS ≤ 0.1V J110 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 17 ‐‐ mS VDS = 5V, ID = 10mA , f = 1kHz gos Output Conductance ‐‐ 0.6 ‐‐ rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 18 Ω VGS = 0V, ID = 0A, f = 1kHz Ciss Input Capacitance ‐‐ 60 85 VDS = 0V, VGS = 0V, f = 1MHz pF Crss Reverse Transfer Capacitance ‐‐ 11 15 VDS = 0V, VGS = ‐10V, f = 1MHz en Equivalent Noise Voltage ‐‐ 3.5 ‐‐ nV/√Hz VDS = 5V, ID = 10mA , f = 1kHz J110 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS (See Packaging Information). Click To Buy td(on) Turn On Time 3 tr Turn On Rise Time 1 td(off) Turn Off Time 4 tf Turn Off Fall Time 18 ns VDD = 1.5V VGS(H) = 0V See Switching Circuit Note 1 ‐ Absolute maximum ratings are limiting values above which J110 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% J110 SWITCHING CIRCUIT PARAMETERS VGS(L) ‐5V RL 150Ω ID(on) 10mA Micross Components Europe Available Packages: SWITCHING TEST CIRCUIT TO-18 (Bottom View) J110 in TO-18 J110 in bare die. Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.