SRAM MT5C6408 8K x 8 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) • SMD 5962-38294 • MIL-STD-883 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention • High-performance, low-power CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE1\ and CE2 • All inputs and outputs are TTL compatible OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access -12 -15 -20 -25 -35 -45 -55* -70* • Package(s) Ceramic DIP (300 mil) Ceramic LCC Ceramic Flatpack C EC F NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss Vcc WE\ CE2 A8 A9 A11 OE\ A10 CE1\ DQ8 DQ7 DQ6 DQ5 DQ4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc WE\ CE2 A8 A9 A11 OE\ A10 CE1\ DQ8 DQ7 DQ6 DQ5 DQ4 GENERAL DESCRIPTION The MT5C6408, 8K x 8 SRAM, employs high-speed, low-power CMOS technology, eliminating the need for clocks or refreshing. These SRAM’s have equal access and cycle times. For flexibility in high-speed memory applications, Micross Components offers dual chip enables (CE1\, CE2) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH. Reading is accomplished when WE\ and CE2 remain HIGH and CE1\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. No. 108 No. 204 No. 302 L *Electrical characteristics identical to those provided for the 45ns access devices. For more products and information please visit our web site at www.micross.com MT5C6408 Rev. 4.2 01/10 28 27 26 25 24 23 22 21 20 19 18 17 16 15 28-Pin Flat Pack (F) • Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT • 2V data retention/low power 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28-Pin LCC (EC) Micross Components reserves the right to change products or specifications without notice. 1 SRAM MT5C6408 FUNCTIONAL BLOCK DIAGRAM VCC I/O CONTROL DQ8 ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 Vss 65,536-BIT MEMORY ARRAY DQ1 CE1\ CE2 COLUMN DECODER OE\ WE\ A8 A9 A10 A11 A12 POWER DOWN TRUTH TABLE MODE STANDBY STANDBY READ READ WRITE MT5C6408 Rev. 4.2 01/10 CE1\ H X L L L CE2 X L H H H WE\ X X H H L OE\ X X L H X DQ POWER HIGH-Z STANDBY HIGH-Z STANDBY Q ACTIVE HIGH-Z ACTIVE D ACTIVE Micross Components reserves the right to change products or specifications without notice. 2 SRAM MT5C6408 ABSOLUTE MAXIMUM RATINGS* Voltage on any Input or DQ Relative to Vss........-0.5V to +7.0V Voltage on Vcc Supply Relative to Vss.................-0.5V to +7.0V Storage Temperature….........................................-65oC to +150oC Power Dissipation......................................................................1W Max Junction Temperature..................................................+175°C Lead Temperature (soldering 10 seconds)........................+260oC Short Circuit Output Current................................................50mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage PARAMETER Power Supply Current: Operating Power Supply Current: Standby CONDITIONS SYMBOL VIH VIL IL I 0V ≤ VIN ≤ Vcc Output(s) disabled 0V < VOUT < Vcc IOH = -4.0mA IOL = 8.0mA ILO VOH VOL MIN 2.2 -0.5 -10 MAX Vcc+0.5 0.8 10 UNITS V V μA -10 2.4 10 μA 0.4 V V NOTES 1 1, 2 1 1 CONDITIONS CE\ < VIL; VCC = MAX f = MAX = 1/tRC (MIN) Output Open SYM -12 -15 MAX -20 -25 -35 -45 Icc 180 170 160 155 155 145 mA CE\ > VIH; All Other Inputs < VIL or > VIH, VCC = MAX f = 0 Hz ISBTSP 40 40 40 40 40 40 mA ISBTLP 30 30 30 30 30 30 mA CE\ > (VCC -0.2); VCC = MAX All Other Inputs < 0.2V or > (VCC - 0.2V), f = 0 Hz ISBCSP 20 20 20 20 20 20 mA ISBCLP 10 10 10 10 10 10 mA UNITS NOTES 3 CAPACITANCE DESCRIPTION Input Capacitance Output Capacitance MT5C6408 Rev. 4.2 01/10 CONDITIONS o TA = 25 C, f = 1MHz Vcc = 5V SYM MAX UNITS NOTES CI 6 pF 4 CO 7 pF 4 Micross Components reserves the right to change products or specifications without notice. 3 SRAM MT5C6408 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z MT5C6408 Rev. 4.2 01/10 -12 -15 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tAOE tLZOE tHZOE 12 tWC tCW tAW tAS tAH tWP tDS tDH 12 10 10 0 0 10 7 0 2 0 tLZWE tHZWE 15 12 12 2 2 20 15 15 0 0 7 8 0 0 0 10 12 0 7 7 0 0 0 10 3 0 0 10 15 25 ns ns ns ns ns ns ns ns ns ns 3 0 0 25 20 0 30 35 30 30 0 0 30 15 5 0 0 40 ns ns ns ns ns ns ns ns ns 45 45 15 15 15 25 20 20 0 0 20 15 0 0 0 45 35 35 15 15 15 20 15 15 0 0 15 12 0 0 0 35 25 25 15 15 10 15 13 13 0 0 13 10 0 0 0 25 20 20 15 45 40 40 0 0 40 20 5 0 0 7 6, 7 6 7 6, 7 Micross Components reserves the right to change products or specifications without notice. 4 SRAM MT5C6408 AC TEST CONDITIONS Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2 Q Q VTH = 5pF Fig. 1 Output Load Equivalent 7. NOTES 1. 2. 3. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV typical from steady state voltage, allowing for actual tester RC time constant. 8. 9. 10. 11. 12. is 13. VTH = Fig. 2 Output Load Equivalent At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE and tHZOE is less than tLZOE. WE\ is HIGH for READ cycle. Device is continuously selected. Chip enables and output enables are held in their active state. Address valid prior to, or coincident with, latest occurring chip enable. t RC = Read Cycle Time. CE2 timing is the same as CE1\ timing. The waveform inverted. Chip enable (CE1\, CE2) and write enable (WE\) can initiate and terminate a WRITE cycle. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION CONDITIONS VCC for Retention Data SYM MIN MAX UNITS NOTES VDR 2 --- V 300 μA --- ns 4 ns 4, 11 CE\ > (VCC - 0.2V) Data Retention Current VIN > (VCC - 0.2V) or < 0.2V VCC = 2V Chip Deselect to Data Retention Time Operation Recovery Time ICCDR tCDR 0 tR tRC LOW Vcc DATA RETENTION WAVEFORM VCC 4.5V DATA RETENTION MODE 4.5V V > 2V DR tCDR CE\ VIH VIL tR VDR DON’T CARE UNDEFINED MT5C6408 Rev. 4.2 01/10 Micross Components reserves the right to change products or specifications without notice. 5 SRAM MT5C6408 READ CYCLE NO. 1 8, 9 ttRC RC ADDRESS VALID ttAA AA tOH tOH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10, 12 tRC tRC CE\ tAOE tAOE t HZOE tHZOE tL- tLZOE OE\ tLZCE tLZCE t tACE tACE HZCE tHZCE DQ DATA VALID ttPU PU tPD tPD Icc DON’T CARE UNDEFINED MT5C6408 Rev. 4.2 01/10 Micross Components reserves the right to change products or specifications without notice. 6 SRAM MT5C6408 WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) t WC tWC ADDRESS t AW tAW tAS t AH tAH tCW tAS tCW CE\ t WP tWP1 WE\ t tDS DH tDH tDS DQ D DATA VAILD Q HIGH Z WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled) tWC tWC ADDRESS tAW tAW tAH tAH tCW tCW CE\ tAS tAS tWP tWP1 WE\ tDS DQ D tDH tDH DATA VALID Q HIGH-Z DON’T CARE UNDEFINED NOTE: Output enable (OE\) is inactive (HIGH). MT5C6408 Rev. 4.2 01/10 Micross Components reserves the right to change products or specifications without notice. 7 SRAM MT5C6408 MECHANICAL DEFINITIONS* Micross Case #108 (Package Designator C) SMD 5962-38294, Case Outline Z D S2 A Q L E S1 b2 e b eA c NOTE: These dimensions are per the SMD. Micross’ package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6408 Rev. 4.2 01/10 Micross Components reserves the right to change products or specifications without notice. 8 SRAM MT5C6408 MECHANICAL DEFINITIONS* Micross Case #204 (Package Designator EC) SMD 5962-38294, Case Outline U D1 B2 D2 L2 e E3 E E1 E2 h x 45o D L hx45o B1 D3 A A1 NOTE: These dimensions are per the SMD. Micross’ package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6408 Rev. 4.2 01/10 Micross Components reserves the right to change products or specifications without notice. 9 SRAM MT5C6408 MECHANICAL DEFINITIONS* Micross Case #302 (Package Designator F) SMD 5962-38294, Case Outline M e b D S Top View E L A c Q E2 E3 NOTE: These dimensions are per the SMD. Micross’ package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6408 Rev. 4.2 01/10 Micross Components reserves the right to change products or specifications without notice. 10 SRAM MT5C6408 ORDERING INFORMATION EXAMPLE: MT5C6408C-25L/XT Device Number EXAMPLE: MT5C6408EC-15L/IT Package Speed Options** Process Type ns Device Number Package Speed Options** Process Type ns MT5C6408 C -12 L /* MT5C6408 EC -12 L /* MT5C6408 C -15 L /* MT5C6408 EC -15 L /* MT5C6408 C -20 L /* MT5C6408 EC -20 L /* MT5C6408 C -25 L /* MT5C6408 EC -25 L /* MT5C6408 C -35 L /* MT5C6408 EC -35 L /* MT5C6408 C -45 L /* MT5C6408 EC -45 L /* MT5C6408 C -55 L /* MT5C6408 EC -55 L /* MT5C6408 C -70 L /* MT5C6408 EC -70 L /* EXAMPLE: MT5C6408F-55/883C Device Number Package Speed Options** Process Type ns MT5C6408 F -12 L /* MT5C6408 F -15 L /* MT5C6408 F -20 L /* MT5C6408 F -25 L /* MT5C6408 F -35 L /* MT5C6408 F -45 L /* MT5C6408 F -55 L /* MT5C6408 F -70 L /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing -40oC to +85oC -55oC to +125oC -55oC to +125oC ** OPTIONS L = 2V Data Retention/Low Power MT5C6408 Rev. 4.2 01/10 Micross Components reserves the right to change products or specifications without notice. 11 SRAM MT5C6408 MICROSS TO DSCC PART NUMBER CROSS REFERENCE* Micross Package Designator EC Micross Package Designator C Micross Part # MT5C6808C-12/883C MT5C6808C-12L/883C MT5C6808C-20/883C MT5C6808C-20L/883C MT5C6808C-25/883C MT5C6808C-25L/883C MT5C6808C-35/883C MT5C6808C-35L/883C MT5C6808C-45/883C MT5C6808C-45L/883C MT5C6808C-55/883C MT5C6808C-55L/883C MT5C6808C-70/883C Micross Part # MT5C6808EC-12/883C MT5C6808EC-12L/883C MT5C6808EC-20/883C MT5C6808EC-20L/883C MT5C6808EC-25/883C MT5C6808EC-25L/883C MT5C6808EC-35/883C MT5C6808EC-35L/883C MT5C6808EC-45/883C MT5C6808EC-45L/883C MT5C6808EC-55/883C MT5C6808EC-55L/883C MT5C6808EC-70/883C SMD Part # 5962-3829447MZX 5962-3829446MZX 5962-3829458MZA 5962-3829457MZA 5962-3829456MZA 5962-3829455MZA 5962-3829454MZA 5962-3829453MZA 5962-3829452MZA 5962-3829451MZA 5962-3829450MZA 5962-3829449MZA 5962-3829448MZA SMD Part # 5962-3829447MUX 5962-3829446MUX 5962-3829458MUA 5962-3829457MUA 5962-3829456MUA 5962-3829455MUA 5962-3829454MUA 5962-3829453MUA 5962-3829452MUA 5962-3829451MUA 5962-3829450MUA 5962-3829449MUA 5962-3829448MUA Micross Package Designator F Micross Part # MT5C6808F-12/883C MT5C6808F-12L/883C MT5C6808F-20/883C MT5C6808F-20L/883C MT5C6808F-25/883C MT5C6808F-25L/883C MT5C6808F-35/883C MT5C6808F-35L/883C MT5C6808F-45/883C MT5C6808F-45L/883C MT5C6808F-55/883C MT5C6808F-55L/883C MT5C6808C-70/883C SMD Part # 5962-3829447MMX 5962-3829446MMX 5962-3829458MMA 5962-3829457MMA 5962-3829456MMA 5962-3829455MMA 5962-3829454MMA 5962-3829453MMA 5962-3829452MMA 5962-3829451MMA 5962-3829450MMA 5962-3829449MMA 5962-3829448MZA *Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C6408 Rev. 4.2 01/10 Micross Components reserves the right to change products or specifications without notice. 12