MT5C6405 - Micross

SRAM
MT5C6405
16K x 4 SRAM
PIN ASSIGNMENT
(Top View)
SRAM MEMORY ARRAY
24-Pin DIP (C)
(300 MIL)
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-86859
• MIL-STD-883
A5
A6
A7
A8
A9
A10
A11
A12
A13
CE\
OE\
Vss
FEATURES
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vcc
A4
A3
A2
A1
A0
NC
DQ4
DQ3
DQ2
DQ1
WE\
A5
NC
NC
Vcc
NC
28-Pin LCC (EC)
3 2 1 28 27
MARKING
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
-12
-15
-20
-25
-35
-45*
-55*
-70*
• Package(s)
Ceramic DIP (300 mil) C
Ceramic LCC
No. 106
EC
No. 204
GENERAL DESCRIPTION
The Micross Components SRAM family employs highspeed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using
double-layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications, Micross
Components offers chip enable (CE\) and output enable (OE\)
capability. These enhancements can place the outputs in High-Z
for additional flexibility in system design.
Writing to these devices is accomplished when write enable
(WE\) and CE\ inputs are both LOW. Reading is accomplished
when WE\ remains HIGH and CE\ and OE\ go LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power
requirements.
All devices operate from a single +5V power supply and all
inputs and outputs are fully TTL compatible.
L
*Electrical characteristics identical to those provided for the 35ns access devices.
For more products and information
please visit our web site at
www.miross.com
MT5C6405
Rev. 2.2 01/10
NC
A4
A3
A2
A1
A0
DQ4
DQ3
DQ2
13 14 15 16 17
• Operating Temperature Ranges
Industrial (-40oC to +85oC)
IT
Military (-55oC to +125oC)
XT
• 2V data retention/low power
26
25
24
23
22
21
20
19
18
A6 4
A7 5
A8 6
A9 7
A10 8
A11 9
A12 10
A13 11
CE\ 12
DQ1
WE\
NC
Vss
OE\
OPTIONS
Micross Components reserves the right to change products or specifications without notice.
1
SRAM
MT5C6405
FUNCTIONAL BLOCK DIAGRAM
VCC
I/O CONTROL
D
ROW DECODER
A
A
A
A
A
A
A
A
A
GND
1,048,576-BIT
MEMORY ARRAY
Q
CE\
(LSB)
OE\
COLUMN DECODER
WE\
POWER
DOWN
(LSB)
A A A A A A A A A A
TRUTH TABLE
MODE
STANDBY
READ
READ
WRITE
MT5C6405
Rev. 2.2 01/10
OE\
X
L
H
X
CE\
H
L
L
L
WE\
X
H
H
L
DQ
HIGH-Z
Q
HIGH-Z
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
Micross Components reserves the right to change products or specifications without notice.
2
SRAM
MT5C6405
*Stresses greater than those listed under “Absolute Maximum
ABSOLUTE MAXIMUM RATINGS*
Voltage on any Input or DQ Relative to Vss....-0.5V to +7.0V1 Ratings” may cause permanent damage to the device. This
Storage Temperature…...................................-65oC to +150oC is a stress rating only and functional operation of the device
Power Dissipation.................................................................1W at these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
Max Junction Temperature..................................................+175°C
Lead Temperature (soldering 10 seconds)........................+260oC to absolute maximum rating conditions for extended periods
Short Circuit Output Current...........................................20mA may affect reliability.
1 All voltage referenced to Vss.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
SYM
MIN
MAX
VIH
2.2
Vcc+0.5V
V
1
VIL
-0.5
0.8
V
1, 2
0V < VIN < VCC
ILI
-10
10
μA
Outputs Disabled
0V < VOUT < VCC
ILO
-10
10
μA
Output High Voltage
IOH = -4.0mA
VOH
2.4
Output Low Voltage
IOL = 8.0mA
VOL
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
0.4
UNITS NOTES
V
1
V
1
CONDITIONS
SYM
-12
-15
MAX
-20
-25
-35
Power Supply
Current: Operating
CE\ < VIL; VCC = MAX
Output Open
Icc
140
125
110
100
90
mA
Power Supply
Current: Standby
CE\ > VIH; VCC = MAX
f = 0 Hz
ISBT1
50
45
40
35
30
mA
CE\ > (VCC -0.2); VCC = MAX
All Other Inputs < 0.2V
or > (VCC - 0.2V), f = 0 Hz
ISBC2
25
25
25
25
25
mA
PARAMETER
UNITS NOTES
3
CAPACITANCE
DESCRIPTION
Input Capacitance
Output Capacitance
MT5C6405
Rev. 2.2 01/10
CONDITIONS
o
TA = 25 C, f = 1MHz
Vcc = 5V
SYM
MAX
UNITS
NOTES
CI
8
pF
4
CO
10
pF
4
Micross Components reserves the right to change products or specifications without notice.
3
SRAM
MT5C6405
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Chip Enable to power-up time
Chip disable to power-down time
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
MT5C6405
Rev. 2.2 01/10
-12
-15
-20
-25
-35
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
tRC
tAA
tACE
tOH
tLZCE
tHZCE
tPU
tPD
tAOE
tLZOE
tHZOE
12
tWC
tCW
tAW
tAS
tAH
tWP
tDS
tDH
12
10
10
0
0
10
7
0
2
0
tLZWE
tHZWE
15
12
12
2
2
20
15
15
2
2
7
0
2
2
8
0
12
6
0
6
7
20
15
15
0
0
15
10
0
2
0
8
15
0
0
35
15
8
10
25
20
20
0
0
20
12
0
2
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
15
25
10
8
15
2
2
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
35
35
12
20
8
7
15
12
12
0
0
12
8
0
2
0
2
2
0
0
35
25
25
10
15
7
6
25
20
20
10
35
25
25
0
0
25
15
0
2
0
7
6, 7
6
7
6, 7
Micross Components reserves the right to change products or specifications without notice.
4
SRAM
MT5C6405
AC TEST CONDITIONS
480
Input pulse levels ...................................... Vss to 3.0V
Input rise and fall times ......................................... 5ns
Input timing reference levels ................................ 1.5V
Output reference levels ....................................... 1.5V
Output load ................................. See Figures 1 and 2
Q
Q
5 pF
255
Fig. 1 Output Load
Equivalent
Fig. 2 Output Load
Equivalent
7.
At any given temperature and voltage condition,
tHZCE is less than tLZCE, and tHZWE is less than tLZWE.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
12. CE2 timing is the same as CE1\ timing. The waveform
is inverted.
NOTES
1.
2.
3.
All voltages referenced to VSS (GND).
-3V for pulse width < 20ns
ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
unloaded, and f =
1
Hz.
t
RC (MIN)
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6. tHZCE, tHZOE and tHZWE are specified with CL = 5pF
as in Fig. 2. Transition is measured ±200mV typical from
steady state voltage, allowing for actual tester RC time constant.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
CONDITIONS
DESCRIPTION
VCC for Retention Data
SYM
MIN
MAX
UNITS
NOTES
VDR
2
---
V
1
mA
---
ns
4
ns
4, 11
CE\ > (VCC - 0.2V)
Data Retention Current
VIN > (VCC - 0.2V)
or < 0.2V
VCC = 2V
Chip Deselect to Data
Retention Time
Operation Recovery Time
ICCDR
tCDR
0
tR
tRC
LOW Vcc DATA RETENTION WAVEFORM
VCC
4.5V
DATA RETENTION MODE
4.5V
V > 2V
DR
tCDR
CE\
VIH
VIL
tR
VDR
DON’T CARE
UNDEFINED
MT5C6405
Rev. 2.2 01/10
Micross Components reserves the right to change products or specifications without notice.
5
SRAM
MT5C6405
READ CYCLE NO. 1 8, 9
ttRC
RC
ADDRESS
VALID
ttAA
AA
tOH
tOH
DQ
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10
tRC
tRC
CE\
tAOE
tAOE
t
HZOE
tHZOE
tL-
tLZOE
OE\
tLZCE
tLZCE
DQ
HIGH-Z
t
tACE
tACE
HZCE
tHZCE
DATA VALID
ttPU
PU
tPD
tPD
Icc
DON’T CARE
UNDEFINED
MT5C6405
Rev. 2.2 01/10
Micross Components reserves the right to change products or specifications without notice.
6
SRAM
MT5C6405
WRITE CYCLE NO. 1 12
(Chip Enabled Controlled)
t
WC
tWC
ADDRESS
t
AW
tAW
tAS
t
AH
tAH
tCW
tAS
tCW
CE\
t
WP
tWP1
WE\
t
tDS
DH
tDH
tDS
DQ
D
DATA VAILD
QQ
HIGH-Z
HIGH Z
WRITE CYCLE NO. 2 7, 12, 13
(Write Enabled Controlled)
tWC
tWC
ADDRESS
tAW
tAW
tAH
tAH
tCW
tCW
CE\
tAS
tAS
tWP
tWP1
WE\
tDS
DQ
D
Q
Q
tDH
tDH
DATA VALID
HIGH-Z
HIGH-Z
DON’T CARE
UNDEFINED
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C6405
Rev. 2.2 01/10
Micross Components reserves the right to change products or specifications without notice.
7
SRAM
MT5C6405
MECHANICAL DEFINITIONS*
Micross Case #106 (Package Designator C)
SMD 5962-86859, Case Outline L
D
A
Q
L
E
S1
b2
e
b
eA
c
NOTE: These dimensions are per the SMD. Micross’ package dimensional limits
may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6405
Rev. 2.2 01/10
Micross Components reserves the right to change products or specifications without notice.
8
SRAM
MT5C6405
MECHANICAL DEFINITIONS*
Micross Case #204 (Package Designator EC)
SMD 5962-86859, Case Outline U
D1
B2
D2
L2
e
E3
E
E1
E2
h x 45o
D
L
hx45o
B1
D3
A
A1
NOTE: These dimensions are per the SMD. Micross’ package dimensional limits
may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6405
Rev. 2.2 01/10
Micross Components reserves the right to change products or specifications without notice.
9
SRAM
MT5C6405
ORDERING INFORMATION
EXAMPLE: MT5C6405C-25L/XT
Device Number
EXAMPLE: MT5C6405EC-15L/IT
Package Speed
Options** Process
Type
ns
MT5C6405
C
MT5C6405
MT5C6405
Device Number
MT5C6405
Package Speed
Options** Process
Type
ns
-12
L
/*
C
-15
L
/*
MT5C6405
C
-20
L
/*
MT5C6405
MT5C6405
C
-25
L
/*
MT5C6405
EC
-25
L
/*
MT5C6405
C
-35
L
/*
MT5C6405
EC
-35
L
/*
MT5C6405
C
-45
L
/*
MT5C6405
EC
-45
L
/*
MT5C6405
C
-55
L
/*
MT5C6405
EC
-55
L
/*
MT5C6405
C
-70
L
/*
MT5C6405
EC
-70
L
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
EC
-12
L
/*
EC
-15
L
/*
EC
-20
L
/*
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
** OPTIONS
L = 2V Data Retention/Low Power
MT5C6405
Rev. 2.2 01/10
Micross Components reserves the right to change products or specifications without notice.
10
SRAM
MT5C6405
MICROSS TO DSCC PART NUMBER
CROSS REFERENCE*
Micross Package Designator C
MicrossPackage Designator EC
Micross Part #
MT5C6805C-35/883C
MT5C6805C-35L/883C
MT5C6805C-45/883C
MT5C6805C-45L/883C
MT5C6805C-55/883C
MT5C6805C-55L/883C
MT5C6805C-70/883C
MT5C6805C-70L/883C
Micross Part #
MT5C6805EC-35/883C
MT5C6805EC-35L/883C
MT5C6805EC-45/883C
MT5C6805EC-45L/883C
MT5C6805EC-55/883C
MT5C6805EC-55L/883C
MT5C6805EC-70/883C
MT5C6805EC-70L/883C
SMD Part#
5962-8685918LA
5962-8685917LA
5962-8685916LA
5962-8685915LA
5962-8685914LA
5962-8685913LA
5962-8685912LA
5962-8685911LA
SMD Part #
5962-8685918UA
5962-8685917UA
5962-8685916UA
5962-8685915UA
5962-8685914UA
5962-8685913UA
5962-8685912UA
5962-8685911UA
* Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C6405
Rev. 2.2 01/10
Micross Components reserves the right to change products or specifications without notice.
11