MOSFETs ) ) t (A s hm i) s(S ) nC e( d kra Aeroflex Part Number n ) n O rg rre (m ow ial (V u ha d C N k nt C O n a i S te Bre Pote Dra Ga RD RAD7110-NCx 100 220 3.5 15 100 Au, Xe 1 Bare Die Prototype, EM, Space RAD7130-NCx 100 TBD TBD 50 100 Au, Xe 3 Bare Die Prototype, EM, Space RAD7160-NCx 100 10 60 150 100 Au, Xe 6 Bare Die Prototype, EM, Space RAD7114-NCx 150 600 2.2 15 100 Au, Xe 1 Bare Die Prototype, EM, Space RAD7134-NCx 150 TBD TBD 50 100 Au, Xe 3 Bare Die Prototype, EM, Space RAD7164-NCx 150 24 35 150 100 Au, Xe 6 Bare Die Prototype, EM, Space RAD7210-NCx 200 700 2.0 15 100 Au, Xe 1 Bare Die Prototype, EM, Space RAD7230-NCx 200 TBD TBD 50 100 Au, Xe 3 Bare Die Prototype, EM, Space RAD7260-NCx 200 34 30 150 100 Au, Xe 6 Bare Die Prototype, EM, Space RAD7214-NCx 250 1200 1.5 15 100 Au, Xe 1 Bare Die Prototype, EM, Space RAD7234-NCx 250 200 9.0 50 100 Au, Xe 3 Bare Die Prototype, EM, Space RAD7264-NCx 250 51 28 150 100 Au, Xe 6 Bare Die Prototype, EM, Space e os D tal * EE To S g nin ge ize ka ac S Die e cre S P *SEE (Single Event Effects) Units exhibit immunity to SEGR and SEB at listed ion when tested at full rated drain potential and in the off-state. The following ion characteristics were used: Xe, 10MeV/n Berkeley beam. Initial LET of approximately 60MeV-cm2/mg. Au, 1.7MeV/n Brookhaven beam. Initial LET of approximately 84MeV-cm2/mg. See SEB/SEGR reports full details. x = P for prototypes, E for engineering samples, S for Class S. Aeroflex MOSFET Numbering RAD 7 1 1 0 N C x TID Level Breakdown Die Size Breakdown Adder Channel Type Package Technology 7 - 100 krads(Si) 1 - 100V 2 - 200V 1 - Size 1 3 - Size 3 6 - Size 6 0 - None 3 - 30V 4 - 50V N - N Type C - Bare Die Reserved - 7725 N. Orange Blossom Trail • Orlando, FL 32810 • P: 407.298.7100 • F: 407.290.0164 • [email protected] • www.micross.com