AN1756 - Intersil

Application Note 1756
Authors: Oscar Mansilla, Richard Hood, Lawrence Pearce, Eric Thomson and Nick Vanvonno
Single Event Effects Testing of the ISL70227SRH, Dual
36V Rad Hard Precision Operation Amplifiers
Introduction
SEE Test Objective
The intense heavy ion environment encountered in space
applications can cause a variety of transient and destructive
effects in analog circuits, including single-event latch-up (SEL),
single-event transients (SET) and single-event burnout (SEB).
These effects can lead to system-level failures including
disruption and permanent damage. For predictable and
reliable system operation, these components have to be
formally designed and fabricated for SEE hardness, followed
by a detailed SEE testing to validate the design. This report
discusses the results of SEE testing of Intersil’s ISL70227SRH.
The objectives of SEE testing on the ISL70227SRH were to
evaluate its susceptibility to single event latch-up and single
event burnout and determine its SET behavior.
Related Documents
SEE Test Facility
Testing was performed at the Texas A&M University (TAMU)
Cyclotron Institute heavy ion facility. This facility is coupled to a
K500 super-conducting cyclotron, which is capable of
generating a wide range of test particles with the various
energy, flux and fluence levels needed for advanced radiation
testing.
• ISL70227SRH Data Sheet, FN7925
SEE Test Procedure
Product Description
The part was tested for single event latch-up and burnout,
using Au ions (LET = 86.4MeV•cm2/mg) with a case
temperature of 125°C and single event transient
characterized using Ne, Ar, and Kr ions with a case
temperature of 25°C.
The ISL70227SRH is a low noise 10MHz BW high precision,
dual operational amplifier featuring very low input bias current
and low offset voltage with low temperature drift. A super-beta
NPN input stage with input bias current cancellation provides
low input bias current and low input offset voltage while a
complimentary bipolar output stage enables high capacitive
load drive without external compensation. These features plus
its radiation tolerance make the ISL70227SRH the ideal
choice for applications requiring both high DC accuracy and AC
performance.
The ISL70227SRH is implemented in an advanced bonded
wafer SOI process using deep trench isolation, resulting in a
fully isolated structure. This choice of process technology also
results in latch-up free performance, whether electrically or
single event induced (SEL).
This amplifier is designed to operate over a wide supply range
of 4.5V to 36V. Applications for these amplifiers include
precision active filters, low noise front ends, loop filters, data
acquisition and charge amplifiers.
The part is packaged in a 10 lead hermetic ceramic flat pack
and operates over the extended temperature range of -55°C to
+125°C. A summary of key full temperature range
specifications follows:
The device under test (DUT) was mounted in the beam line and
irradiated with heavy ions of the appropriate species. The parts
were assembled in 10 lead dual in-line packages with the
metal lid removed for beam exposure. The beam was directed
onto the exposed die and the beam flux, beam fluence and
errors in the device outputs were measured.
The tests were controlled remotely from the control room. All
input power was supplied from portable power supplies
connected via cable to the DUT. The supply currents were
monitored along with the device outputs. All currents were
measured with digital ammeters, while all the output
waveforms were monitored on a digital oscilloscope for ease
of identifying the different types of SEE, which the part
displayed. Events were captured by triggering on changes in
the output.
SEE Test Set-Up Diagrams
A schematic of the evaluation board is shown in Figure 1.
RF
+
• Input Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . 100µV, max.
• Offset Voltage Drift . . . . . . . . . . . . . . . . . . . . . . . 1µV/°C, max.
• Input Offset Current . . . . . . . . . . . . . . . . . . . . . . . . 12nA, max.
• Input Bias Current . . . . . . . . . . . . . . . . . . . . . . . . . . 12nA, max.
IN -
RIN-
IN-
-
IN+
+
IN10k
RIN+
IN+
IN +
VCM
VREF
10k
ISL70227SRH (1/2)
100k
VP
V+
V-
0
VOUT
VM
RREF+
100k
• Supply Current/Amplifier . . . . . . . . . . . . . . . . . . . 3.7mA, max.
• Gain Bandwidth Product . . . . . . . . . . . . . . . . . . . . 10MHz, typ.
VREF
GND
FIGURE 1. ISL70227SRH SEE TEST SCHEMATIC
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Application Note 1756
Each operational amplifier was set up in a non-inverting
operation with G = 10V/V. The IN- inputs were grounded and the
input signal was applied to the IN+ pin.
Cross-section Calculation
Cross sections (CS) are calculated as shown by Equation 1:
(EQ. 1)
CS (LET) = N/F
where:
• CS is the SET cross section (cm²), expressed as a function of
the heavy ion LET
• LET is the linear energy transfer in MeV · cm²/mg, corrected
according to the incident angle, if any
Single Event Transient Testing
Test Method
Biasing used for SET test runs was VS = ±4.5V and ± 18V. Similar
to SEL/B testing, a DC voltage of 200mV was applied to the
non-inverting inputs of the amplifiers. Signals from the switch
board in the control room were connected to two LECROY
oscilloscopes: one set to capture transients due to the output of
channel A and the other to capture transients on the output of
channel B.
SET events are recorded when movement on output during beam
exposure exceeds the set window trigger of ±100mV. Summary
of the scope settings are:
a. Scope 1 is set to trigger on Channel 1 to a OUTA window of
±100mV. Measurements on Scope 1 are:
CH1 = OUTA 200mV/div, CH2 = OUTB 500mV/div,
CH3 = OUT 200mV/div, CH4 = OUT5 500mV/div.
• N is the total number of SET events
• F is fluence in particles/cm², corrected according to the
incident angle, if any
b. Scope 2 is set to trigger on Channel 3 to a OUTB window of
±80mV. Measurements on Scope 1 are:
CH1 = OUTA 200mV/div, CH2 = OUTA 500mV/div,
CH3 = OUTB 200mV/div, CH4 = OUT5 500mV/div.
A value of 1/F is the assumed cross section when no event is
observed.
Single Event Latch-up and Burnout
Results
The first testing sequence looked at destructive effects due to
burnout or latch-up. A burnout condition is indicated by a
permanent change in the device supply current after application
of the beam. If the increased current is reset by cycling power, it
is termed a latch-up. No burnout or latch-up was observed using
Au ions (LET = 86.4MeV · cm2/mg) at 0° incidence from the
perpendicular. Testing was performed on four parts at +125°C
(case temperature) and up to the maximum voltage,
VS = ±18.2V. The first three parts (part ID 1, 2 & 3) commenced
testing with VS = ±15V and on subsequent tests VS voltage was
increased to ±17.5V and then ±18.2V. The last parts were tested
with a VS of ±17.5V and ±18.2V. All test runs were run to a
fluence of 2x106/cm2. A power supply applied a DC voltage of
200mV to the non-inverting inputs of the amplifiers during the
test. Functionality of all outputs was verified after exposure. IDD
and IEE were recorded pre and post exposure, with 5% resolution.
Results are shown in Table 1 for the 36.4V total supply voltage.
The switch board at the end of the 20-ft cabling was found to
require terminations of 10nF to keep the noise on the waveforms
to a minimum.
Cross Section Results
Compared to other Intersil radiation tolerant circuits, the
ISL70227SRH was not designed for single event transient
mitigation. The best approach to characterize the single event
transient response is to represent the data on a LET threshold
plot.
Figure 2 shows the cross section of the IC versus the LET level, at
VS = ±4.5V and ± 18V. It can be seen that for an LET < 5.4 MeV·
cm2/mg, the cross section is nearly the same independent of
supply voltage. As the linear energy transfer increases, there is
noticeable increase in cross section area with a lower supply
voltage. Data from Figure 2 is represented in Table 2.
Figures 3 through 6 show the cross section of each channel
independently at VS = ±4.5V and ± 18V with confidence interval
bars for a 90% confidence level.
TABLE 1. ISL70227SRH DETAILS OF SEB/L TESTS FOR VS = ±18.2V and LET = 86.4MeV · cm2/mg
TEMP
(°C)
+125
+125
+125
+125
LET
(MeV•cm2/mg)
86
86
86
86
SUPPLY
CURRENT
PREEXPOSURE
(mA)
10.6
10.8
11.0
10.7
SUPPLY
CURRENT
POSTEXPOSURE
(mA)
LATCH EVENTS
CUMULATIVE
FLUENCE
(PARTICLES/cm2)
CUMULATIVE
CROSS
SECTION
(cm2)
DEVICE ID
SEB/L
0
2.0 x 106
5.0 x 10-7
1
PASS
0
2.0 x 106
5.0 x 10-7
2
PASS
0
2.0 x 106
5.0 x 10-7
3
PASS
10.7
0
2.0 x 106
5.0 x 10-7
4
PASS
TOTAL EVENTS
0
10.6
10.8
11.0
OVERALL FLUENCE
8.0 x 106
OVERALL CS
1.25 x 10-7
TOTAL UNITS
2
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Application Note 1756
1.8x 10-3
1.6 x 10-3
VS = ±4.5V
SET CROSS SECTION (cm2)
1.4 x 10-3
1.2 x 10-3
1.0 x 10-4
8.0 x 10-4
6.0 x 10-4
VS = ±18.5V
4.0 x 10-4
2.0 x 10-4
0
0
10
20
30
40
50
60
LET (MeV · cm2/mg)
FIGURE 2. SET CROSS SECTION vs. LINEAR ENERGY TRANSFER vs. SUPPLY VOLTAGE
TABLE 2. DETAILS OF THE SET CROSS SECTION OF THE ISL70227SRH vs LET vs SUPPLY VOLTAGE
SUPPLY
VOLTAGE (V)
ION
ANGLE
(°)
EFF LET
(MeV·cm2/mg)
FLUENCE PER RUN
(PARTICLES/cm2)
NUMBER OF RUNS
TOTAL SET
EVENT CS cm2
±4.5V
Ne
0
2.7
2.0 x 106
4
18
2.25 x 10-6
±4.5V
Ar
0
8
2.0 x 106
3
1146
1.91 x 10-4
4
6514
8.14 x 10-4
±4.5V
Ar
60
17
2.0 x 106
±4.5V
Kr
0
28
2.0 x 106
4
5968
1.49 x 10-3
±4.5V
Kr
60
56
2.0 x 106
4
6276
1.57 x 10-3
±18V
Ne
0
2.7
2.0 x 106
4
111
1.39 x 10-6
±18V
Ne
60
5.4
2.0 x 106
4
362
4.53 x 10-6
±18V
Ar
0
8
2.0 x 106
4
614
7.68 x 10-6
±18V
Ar
60
17
2.0 x 106
4
1478
1.85 x 10-5
4
2695
3.37 x 10-4
4
3260
4.08 x 10-4
±18V
Kr
0
28
2.0 x 106
±18V
Kr
60
56
2.0 x 106
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9.0E-4
9.0E-4
8.0E-4
8.0E-4
7.0E-4
7.0E-4
CROSS SECTION (cm2)
CROSS SECTION (cm2)
Application Note 1756
6.0E-4
5.0E-4
4.0E-4
3.0E-4
2.0E-4
6.0E-4
5.0E-4
4.0E-4
3.0E-4
2.0E-4
CHANNEL B
CHANNEL A
1.0E-4
1.0E-4
0.0E-4
0
10
20
30
40
50
0.0E-4
60
0
10
20
30
40
50
60
LET (MeV. cm2/mg)
LET (MeV. cm2/mg)
FIGURE 3. CHANNEL A SET CROSS SECTION vs. LET FOR VS = ±4.5V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
FIGURE 4. CHANNEL B SET CROSS SECTION vs. LET FOR VS = ±4.5V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
2.0E-4
2.5E-4
1.8E-4
1.6E-4
CROSS SECTION (cm2)
CROSS SECTION (cm2)
2.0E-4
1.5E-4
1.0E-4
1.2E-4
1.0E-4
8.0E-5
6.0E-5
4.0E-5
5.0E-5
CHANNEL A
0.0E-5
1.4E-4
0
10
20
30
40
50
60
LET (MeV. cm2/mg)
FIGURE 5. CHANNEL A SET CROSS SECTION vs. LET FOR VS = ±18V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
CHANNEL B
2.0E-5
0.0E-5
0
10
20
30
40
50
60
LET (MeV. cm2/mg)
FIGURE 6. CHANNEL B SET CROSS SECTION vs. LET FOR VS = ±18V
WITH 90% CONFIDENCE LEVEL INTERVAL BARS
Single Event Transient Response
The ISL70227SRH exhibited large single event transients
compared to the ISL70218SRH [1]. Surprisingly, the duration of
all the transients were less than 100µs, with the majority of the
transients lasting less than 50µs. Figures 7 though 28 represent
output waveforms of each channel of the amplifier under test at
various bias conditions and LET values. The plots are composites
of the first 50 transients captured on the scope. This information
is useful in quantifying the excursion of the output as a result of
SEE induced transients.
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Application Note 1756
Typical SET Captures
FIGURE 7. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL A,
LET = 2.7MeV*cm2/mg, RUN 445
FIGURE 8. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL B,
LET = 2.7MeV*cm2/mg, RUN 441
FIGURE 9. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 2.7MeV*cm2/mg, RUN 442
FIGURE 10. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 2.7MeV*cm2/mg, RUN 433
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Application Note 1756
Typical SET Captures (Continued)
FIGURE 11. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 5.4MeV*cm2/mg, RUN 452
FIGURE 12. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 5.4MeV*cm2/mg, RUN 446
FIGURE 13. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL A,
LET = 8.5MeV*cm2/mg, RUN 419
FIGURE 14. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL B,
LET = 8.5MeV*cm2/mg, RUN 419
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Application Note 1756
Typical SET Captures (Continued)
FIGURE 15. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 8.5MeV*cm2/mg2, RUN 420
FIGURE 16. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 8.5MeV*cm2/mg, RUN 420
FIGURE 17. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL A,
LET = 17MeV*cm2/mg, RUN 425
FIGURE 18. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL B,
LET = 17MeV*cm2/mg, RUN 425
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Application Note 1756
Typical SET Captures (Continued)
FIGURE 19. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 17MeV*cm2/mg, RUN 426
FIGURE 20. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 17MeV*cm2/mg, RUN 404
FIGURE 21. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL A,
LET = 28MeV*cm2/mg, RUN 521
FIGURE 22. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL B,
LET = 28MeV*cm2/mg, RUN 521
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Application Note 1756
Typical SET Captures (Continued)
FIGURE 23. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 28MeV*cm2/mg, RUN 522
FIGURE 24. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 28MeV*cm2/mg, RUN 512
FIGURE 25. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL A,
LET = 56MeV*cm2/mg, RUN 535
FIGURE 26. TYPICAL CAPTURE AT VS = ±4.5V, CHANNEL B,
LET = 56MeV*cm2/mg, RUN 535
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Application Note 1756
Typical SET Captures (Continued)
FIGURE 27. TYPICAL CAPTURE AT VS = ±18V, CHANNEL A,
LET = 56MeV*cm2/mg, RUN 536
Summary
FIGURE 28. TYPICAL CAPTURE AT VS = ±18V, CHANNEL B,
LET = 56MeV*cm2/mg, RUN 536
References
Single Event Burnout/Latch-up
No single event burnout (SEB) was observed for the device up to
an LET of 86.4MeV · cm2/mg (+125°C) and voltage supply of
VS = ± 18.2V. No single event latch-up (SEL) was observed for the
device up to an LET of 86.4MeV · cm2/mg (+125°C) and voltage
supply of VS = ± 18.2V. SEL and SEB were tested and passed at a
supply voltage greater than that absolute maximum supply
voltage of ± 18V.
Single Event Transient
Based on the results presented, the ISL70227SRH op amp offers
advantages over competitor’s parts with respect to the duration
of the SET output voltage excursion and a lower SET cross section
at a gain of 10 [2], [3]. For devices with VS = ±4.5V the worst
case output voltage transient expected was 1V. This was not a
surprise since the output voltage headroom is 1.5V maximum;
with VS = ±4.5V the maximum output voltage expected is 3V.
Figure 14 shows the output driven to 3V and into saturation; the
recovery time is less than 100µs. Figure 13 shows the same
phenomenon in a negative direction. For amplifiers supplied with
a VS = ±18V, the transient excursions were much larger, however
they did not extend to the expected VOH or VOL levels of ±16.5V.
All the transients observed were 6V deviations or less and
recovery time of the transients were less than 100µs. Compared
to the ISL70218SRH, this part does not experience the long
recovery time during a single event transient. This may be
explained by the higher drive capability of the ISL70227SRH and
its ability to drive highly capacitive loads compared to the
ISL70218SRH.
10
[1] Oscar Mansilla, Richard Hood, Lawrence Pearce, Eric
Thomson and Nick Vanvonno, Application Note AN1677,
“Single Event Effects Testing of the ISL70218SRH, Dual 36V
Rad Hard Low Power Operation Amplifiers”, Intersil
Corporation.
[2] S. Larsson and S. Mattsson, “Heavy Ion Transients in
Operational Amplifier of Type LM124, RH1014 and OP27”,
https://escies.org/download/webDocumentFile?id=837
[3] Ray Ladbury and Stephen Buchner, “SEE Testing of the
RH1013 Dual Precision Operational Amplifier”,
http://radhome.gsfc.nasa.gov/radhome/papers/T121805
_RH1013.pdf
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Application Note 1756
FIGURE 29. ISL70227SRH SEE TEST BOARD SCHEMATIC
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Application Note 1756
FIGURE 30. ISL70227SRH SEE TEST BOARD TOP VIEW
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the Application Note or Technical Brief is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
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