RAD1419 Single Event Latch

SEL Characterization Report
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Single Event Latch-Up Characterization of the Radiation Assured Devices
RAD1419 14-Bit, 800ksps Sampling A/D Converter with Shutdown
Customer: Radiation Assured Devices
RAD Job Number: 10-xxx
Part Type Tested/SMD: Radiation Assured Devices RAD1419 14-Bit, 800ksps Sampling A/D Converter with
Shutdown
Traceability Information: Wafer Lot: W0945251-05, Wafer 3, Lot Date code: 1012; see Appendix A for a
photograph of a sample unit-under-test.
Referenced Test Standard(s): ASTM F1192, EIA/JESD57
Electrical Test Conditions: During the beam run, the units were biased with a static split 5.5V potential on
AVDD, DVDD and VSS. The memories were tested until a total fluence of 1E7ion/cm2 or until a latch-up event was
detected. The supply current was monitored and recorded during exposure. See Appendix B for the details of the
bias conditions.
Test Software / Hardware: ICC.XLS, See Appendix C, Table C.3 for a list of test equipment and calibration
dates.
Ion Energy and LET Ranges: 10MeV/n Xe and Kr beams with effective LETs from 43MeV-cm2/mg to
80MeV-cm2/mg. The 10MeV/n Xe beam had a minimum range of 50μm in silicon to the Bragg Peak.
Heavy Ion Flux and Maximum Fluence Levels: Flux of approximately 2ions/cm2–s to 5E5ions/cm2-s.
Minimum of 1E7ions/cm2 per unit tested or until a latch-up event was detected.
Facility and/or Radiation Source: Lawrence Berkeley National Laboratories (LBNL) Berkeley, CA (10MeV/n
beam).
Irradiation Temperature: 85°C case temperature as specified as the typical high-temperature use condition.
The units-under-test did not exhibit latch-up at any LETs of 55MeV-cm2/mg or
lower. SEL events were recorded and characterized using LETs from 58MeVcm2/mg to 83MeV-cm2/mg. The SEL events were non-destructive and have a
very low limiting cross-section of <3E-06cm2/device. Therefore the RAD1419
14-Bit ADC has a “worst-case” geosynchronous SEL rate of <8E-08
events/device-day or an MTBF of 12.5-million days. An equivalent failure in
time (FIT) rate is approximately 3 failures/billion device-hours
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1.0. Overview and Background
It is well known that heavy ion exposure can cause single event effects that can lead to temporary and/or
permanent damage in electronic devices. The events can occur through various mechanisms including
single event latch-up (SEL), single event burnout (SEB) and single event gate rupture (SEGR). An SEL
event occurs when a parasitic npnp feedback latch structure becomes biased into the on state due to a
dense track of electron-hole pairs created along the heavy ion path in silicon. This latch-up is selfsustaining since there is a positive feedback path created and requires a power cycle to reset. A single
event latch-up can non-destructive or destructive. A non-destructive SEL event occurs if the latch-up
event is “self-limiting” while a destructive SEL event occurs if the current draw from the SEL event is
sufficient to damage the junction and/or bond wire. The damage can become worse and/or becomes
evident with increasing linear energy transfer (LET) and fluence. The two test standards most
frequently used to govern this testing are ASTM F1192 and EIA/JESD57. Single event latch-up testing
is usually performed at the maximum datasheet voltage and temperature to a total fluence of not less
than 1E7ion/cm2.
2.0. Single Event Latch-Up Test Apparatus
The single event latch-up testing described in this final report was performed at the Lawrence Berkeley
National Laboratories (LBNL) using the 88-Inch Cyclotron. The 88-Inch Cyclotron is operated by the
University of California for the US Department of Energy (DOE) and is a K=140 sector-focused
cyclotron with both light- and heavy-ion capabilities. Protons and other light-ions are available at high
intensities (10-20pμA) up to maximum energies of 55 MeV (protons), 65 MeV (deuterons), 135 MeV
(3He) and 140 MeV (4He). Most heavy ions through uranium can be accelerated to maximum energies,
which vary with the mass and charge state.
For the SEL testing described in this final report the devices were placed in the Cave 4B vacuum
chamber aligned with the heavy ion beam line. The test platter in the vacuum chamber has full x and y
alignment capabilities along with 2-dimensional rotation, allowing for a variety of effective LETs for
each ion. For SEE testing Lawrence Berkeley Laboratories provides the dosimetry via a local control
computer running a Lab View based program. Each ion is calibrated just prior to use using five
photomultiplier tubes (PMTs). Four of the five PMTS are used during the test to provide the beam
statistics, while the center PMT is removed following calibration. Figure 2.1 shows an illustration of
the LBL facility; including the location of Cave 4B, where the heavy ion SEE testing took place.
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Figure 2.1. Map of 88-Inch Cyclotron Facility showing the location of Cave 4B, where the SEE testing was
performed.
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3.0. Radiation Test Conditions
The RAD1419 14-Bit, 800ksps Sampling A/D Converter with Shutdown described in this final report
was irradiated using Kr and Xe with a split positive supply potential of 5.5V and at a maximum case
temperature of 85°C. See the Bias Table in Appendix B for the specific details of the bias conditions.
The 10MeV/n beam was used to provide sufficient range in silicon while meeting the maximum LET
requirements of the program. The other beams available at Berkeley are the 4.5MeV/n beam and the
16MeV/n beam. The 4.5MeV/n beam does not provide sufficient range for destructive SEE testing
while the 16MeV/n beam provides a much smaller selection of ions. Figure 3.1 shows the 10MeV/n
beam characteristics for Xe. As seen in the figure, the range to the Bragg Peak is approximately 60μm
while the surface LET is approximately 58MeV-cm2/mg. Note that the units were decapsulated prior to
testing and all exposures took place from the top surface providing a distance to the active layer in
Silicon of approximately 5 to 10μm. Figure 3.2 shows the characteristics for all the beams available at
Berkeley.
The devices were irradiated to a minimum fluence of 1E7ion/cm2 for each run or until a latch-up event
was detected. The flux varied somewhat during the testing, but was consistently targeted to
approximately to between 2E5ion/cm2-s and 5E5ion/cm2-s. As noted, the irradiation of the units-undertest continued until either the minimum fluence was reached or a latchup event was observed.
For the elevated temperature required for single event latch-up testing an aluminum plate heater fixed to
the back of the board and was used to heat the device-under-test (DUT) with an RTD used to monitor
the temperature. The case temperature of the DUT was calibrated prior to the testing to the RTD with a
thermocouple, allowing the RTD to provide feedback and maintain a calibrated 85°C case temperature
throughout the testing. The data monitored during the test (case temperature, supply voltage and supply
current) was routed to the control room (approximately 20-feet away) using shielded coaxial cable.
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80.0
86Kr
70.0
LET (MeV/mg/cm2)
60.0
136Xe
50.0
40.0
30.0
20.0
10.0
0.0
0
20
40
60
80
100
120
Depth in Si (micron)
Figure 3.1. Range of the 10MeV/n Kr and Xe beam into silicon. The range to the Bragg Peak is approximately
80μm and 60μm while the surface LET is approximately 32MeV-cm2/mg and 58MeV-cm2/mg for Kr and Xe,
respectively.
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Figure 3.2. Characteristics of all the beams available at Berkeley. For the testing discussed in this report the
10MeV/n beam was used exclusively, as discussed in the text.
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4.0. Tested Parameters
During heavy ion exposure, the supply current to the unit-under-test was measured and recorded in
approximately 1-second increments. A plot of supply current versus time/fluence for each of the heavy
ion exposures is included in this final report. In addition to recording the supply current, the gross
functionality of the device was monitored following the exposure and before power was cycled when the
units under test did not latch-up. A full parametric test was also performed on all four SEL test units
using the RAD1419 production test program approximately 3-days following the SEL testing.
In general the following two criteria must be met for a device to pass SEL testing: 1) SEL “immunity” to
a minimum specified LET. This test is characterized by a heavy ion exposure to the minimum LET
specified, typically 40MeV-cm2/mg to 80MeV-cm2/mg where the supply current must remain within the
unit’s pre-exposure supply specification limits without cycling power, the unit-under-test must remain
functional following the radiation exposure also without the need to cycle power. Finally, the SEL test
units under test must pass a parametric test at some point following the SEL exposure to ensure no
significant degradation occurred due to undetected events; or 2) SEL “characterization”. SEL
characterization establishes the LET threshold and limiting cross-section, determines if the SEL events
are destructive or non-destructive by verifying gross functionality immediately following a power cycle.
These units also must pass a parametric test at some point following the SEL exposure to ensure no
significant degradation occurred due to the detected or undetected SEL events. Once the
characterization is complete the SEL threshold and cross-section data is used with a space radiation
modeling code (such as CREME96) to determine if the SEL rate is acceptable for the mission
application. If any of these conditions are not satisfied following the heavy ion testing, then the units
(from the lot date code tested) could be logged as an SEL failure and may not be suitable for space flight
application. Note that during heavy ion testing a substantial amount of total dose can be absorbed by the
units-under-test. If a functional or parameter failure occurs during or following the SEL testing, it is
important to separate TID failures from destructive single event effects.
5.0. Single Event Latch-Up Test Results
The RAD1419 14-Bit, 800ksps Sampling A/D Converter with Shutdown SEL test units-under-test did
not exhibit latch-up at any LETs of 55MeV-cm2/mg or lower. SEL events were recorded and
characterized using LETs from 58MeV-cm2/mg to 83MeV-cm2/mg. The SEL events were nondestructive and have a very low limiting cross-section of <3E-06cm2/device. The SEL events were
considered non-destructive by verifying gross functionality at the beam facility and then by running a
full parametric characterization approximately 3-days later.
Using CREME96 we can calculate SEL event rate for a “worst-case” geosynchronous orbit to determine
if these units are suitable for space flight applications. Based on the SEL characterization data shown in
this report and CREME96, the RAD1419 14-Bit ADC has a “worst-case” geosynchronous SEL rate of
<8E-08 events/device-day or an MTBF of 12.5-million days. An equivalent failure in time (FIT) rate is
approximately 3 failures/billion device-hours. See Appendix D for the output of the CREME96 run for
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the details of the orbit parameters used in the above calculations. Note that the overall reliability of
space flight electronics due to failure from random defects in the material is on the order of 10 to 100
FITs. Therefore the probability of an SEL event is much lower than the probability of a random failure
of the components in the system. Also note that the code was run for a geosynchronous orbit. Running
the code at lower orbit altitudes will cause the FIT rate to drop substantially.
Table 5.1 shows a summary of the single event latch-up data acquired. The table shows the run number,
the serial number of the part irradiated, the ion species, the effective LET of the irradiating particle, the
case temperature during testing, the number of SEL events observed during the run, the effective fluence
and the SEL cross-section. Figure 5.1 shows a plot of the SEL characterization data (solid diamonds)
and a Weibull fit to the data. As seen in this figure the units-under-test exhibit a relatively high LET
threshold and a very low SEL cross-section per device at the highest LET test of 80MeV-cm2/mg.
Figures 5.2 through 5.15 show the supply current data during the SEL runs. In these figures the supply
current is plotted as a function of time and the total fluence for each run can be found in Table 5.1. As
seen in these figure, when an SEL event occurs the supply current for each supply jumps to
approximately 300mA for each supply (+5V nominal supply and the –5V nominal supply). This current
is “self regulating”, that is there was no current limiting resistor inline with the power supply pins and
the power supply was set to a compliance of 1A. In all cases, the supply current and gross functionality
of the device were restored following a power cycle to the unit-under-test.
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Table 5.1. Summary of the SEL test runs for the RAD1419 14-Bit, 800ksps Sampling A/D Converter
with Shutdown. Note that no SEL events are detected with an LET of 55MeV-cm2/mg or less.
RUN
Number
Serial
Number
Part Type
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
1
2
3
4
1
2
3
4
1
2
1
2
1
2
3
3
4
2
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
RAD1419
Temp Ion Species/ Eff. Fluence
(°C)
Energy
(ion/cm2)
85
85
85
85
85
85
85
85
85
85
85
85
85
85
85
85
86
86
Xe 10MeV/n
Xe 10MeV/n
Xe 10MeV/n
Xe 10MeV/n
Xe 10MeV/n
Xe 10MeV/n
Xe 10MeV/n
Xe 10MeV/n
Kr 10MeV/n
Kr 10MeV/n
Kr 10MeV/n
Kr 10MeV/n
Kr 10MeV/n
Kr 10MeV/n
Kr 10MeV/n
Kr 10MeV/n
Kr 10MeV/n
Kr 10MeV/n
6.31E+05
1.17E+06
3.54E+05
3.85E+05
1.29E+06
5.92E+05
3.54E+06
7.19E+05
1.00E+07
1.00E+07
1.00E+07
1.00E+07
1.00E+07
1.01E+06
1.01E+06
6.37E+05
5.10E+05
4.34E+05
Effective LET
SEL
Effective LET Cross-Section
2
(MeV-cm2/mg) Events (MeV-cm2/mg)
(cm )
83.0
83.0
83.0
83.0
58.8
58.8
58.8
58.8
43.6
43.6
50.1
50.1
55.2
58.8
58.8
67.9
67.9
83.1
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1
1
1
1
1
1
1
1
0
0
0
0
0
1
1
1
1
1
83.0
83.0
83.0
83.0
58.8
58.8
58.8
58.8
43.6
43.6
50.1
50.1
55.2
58.8
58.8
67.9
67.9
83.1
1.58E-06
8.55E-07
2.82E-06
2.60E-06
7.75E-07
1.69E-06
2.82E-07
1.39E-06
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
9.90E-07
9.90E-07
1.57E-06
1.96E-06
2.30E-06
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SEL Cross Section (cm2/device)
1.00E-04
1.00E-05
1.00E-06
1.00E-07
1.00E-08
0
10
20
30
40
50
60
70
80
90
LET (MeV-cm2/mg)
Figure 5.1. SEL cross-section (cm2/device) versus LET for the RAD1419 ADC tested at 85°C and at the worstcase supply potential of ±5.5V. As seen in this figure the units are susceptible to SEL events with a relatively
high onset LET of greater than 55MeV-cm2/mg and a very low SEL cross-section per device of approximately
3E-6cm2/device at the maximum tested LET of approximately 80MeV-cm2/mg. Note that this is not the limiting
or saturated cross-section since the cross-section may not have fully saturated with increasing LET.
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RAD1419 SN 1, T=85C, Runs 14-18
80mA
Supply Current
60mA
40mA
+5V
20mA
-5V
Beam
On
LET
44
44
50
50
55
0mA
0
20
40
60
80
100
120
140
Time (Seconds)
Figure 5.2. Supply current versus time for the RAD1419 14-Bit ADC serial numbers 1 and 2. The units were
tested with ±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device
can be found in Table 5.1 and was 1E7ions/cm2 for all the runs shown in this figure since no SEL was observed.
The data in this figure shows that the units-under-test are SEL “immune” at an effective LET of 55MeV-cm2/mg
and lower when tested to a total fluence of 1E7ions/cm2. As noted in the text of this report the units remained
functional following each run without cycling power and a verification of full parametric performance was
performed approximately 3-days following the SEL testing, with all parts passing.
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RAD1419 SN 1, T=85C, LET=59, Run 10
300mA
Supply Current
+5V
-5V
200mA
Beam
On
100mA
Latch-Up
0mA
0
5
10
15
Time (Seconds)
Figure 5.3. Supply current versus time for the RAD1419 14-Bit ADC serial number 1. The unit was tested with
±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the onset
of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to SEL
at an effective LET of approximately 59MeV-cm2/mg. The current is “self limiting to approximately 300mA
and, as noted in the text of this report the units remained functional following each run after cycling power.
Further a verification of full parametric performance was performed approximately 3-days following the SEL
testing, with all parts passing.
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RAD1419 SN 1, T=85C, LET=59, Run 11
300mA
Supply Current
+5V
-5V
200mA
Beam
On
100mA
Latch-Up
0mA
0
5
10
Time (Seconds)
Figure 5.4. Supply current versus time for the RAD1419 14-Bit ADC serial number 2. The unit was tested with
±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the onset
of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to SEL
at an effective LET of approximately 59MeV-cm2/mg. The current is “self limiting to approximately 300mA
and, as noted in the text of this report the units remained functional following each run after cycling power.
Further a verification of full parametric performance was performed approximately 3-days following the SEL
testing, with all parts passing.
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RAD1419 SN 1, T=85C, LET=59, Run 12
300mA
Supply Current
+5V
-5V
200mA
Beam
On
100mA
Latch-Up
0mA
0
5
10
15
20
25
30
Time (Seconds)
Figure 5.5. Supply current versus time for the RAD1419 14-Bit ADC serial number 3. The unit was tested with
±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the onset
of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to SEL
at an effective LET of approximately 59MeV-cm2/mg. The current is “self limiting to approximately 300mA
and, as noted in the text of this report the units remained functional following each run after cycling power.
Further a verification of full parametric performance was performed approximately 3-days following the SEL
testing, with all parts passing.
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RAD1419 SN 1, T=85C, LET=59, Run 13
300mA
Supply Current
+5V
-5V
200mA
Beam
On
100mA
Latch-Up
0mA
0
5
10
Time (Seconds)
Figure 5.6. Supply current versus time for the RAD1419 14-Bit ADC serial number 4. The unit was tested with
±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the onset
of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to SEL
at an effective LET of approximately 59MeV-cm2/mg. The current is “self limiting to approximately 300mA
and, as noted in the text of this report the units remained functional following each run after cycling power.
Further a verification of full parametric performance was performed approximately 3-days following the SEL
testing, with all parts passing.
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RAD1419 SN 2, T=85C, LET=59, Run 19
+5V
-5V
Supply Current
300mA
200mA
Beam
On
100mA
Latch-Up
0mA
0
5
10
15
20
Time (Seconds)
Figure 5.7. Supply current versus time for the RAD1419 14-Bit ADC serial number 2. The unit was tested with
±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the onset
of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to SEL
at an effective LET of approximately 59MeV-cm2/mg. The current is “self limiting to approximately 300mA
and, as noted in the text of this report the units remained functional following each run after cycling power.
Further a verification of full parametric performance was performed approximately 3-days following the SEL
testing, with all parts passing.
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RAD1419 SN 2, T=85C, LET=59, Run 20
+5V
-5V
Supply Current
300mA
200mA
Beam
On
100mA
Latch-Up
0mA
0
5
10
15
20
Time (Seconds)
Figure 5.8. Supply current versus time for the RAD1419 14-Bit ADC serial number 3. The unit was tested with
±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the onset
of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to SEL
at an effective LET of approximately 59MeV-cm2/mg. The current is “self limiting to approximately 300mA
and, as noted in the text of this report the units remained functional following each run after cycling power.
Further a verification of full parametric performance was performed approximately 3-days following the SEL
testing, with all parts passing.
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RAD1419 SN 2, T=85C, LET=68, Run 21
+5V
-5V
Supply Current
300mA
200mA
Beam
On
100mA
Latch-Up
0mA
0
5
10
Time (Seconds)
Figure 5.9. Supply current versus time for the RAD1419 14-Bit ADC serial number 3. The unit was tested with
±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the onset
of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to SEL
at an effective LET of approximately 68MeV-cm2/mg. The current is “self limiting to approximately 300mA
and, as noted in the text of this report the units remained functional following each run after cycling power.
Further a verification of full parametric performance was performed approximately 3-days following the SEL
testing, with all parts passing.
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RAD1419 SN 2, T=85C, LET=68, Run 22
+5V
-5V
Supply Current
300mA
Beam
On
200mA
100mA
Latch-Up
0mA
0
5
10
15
20
Time (Seconds)
Figure 5.10. Supply current versus time for the RAD1419 14-Bit ADC serial number 4. The unit was tested
with ±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the
onset of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to
SEL at an effective LET of approximately 68MeV-cm2/mg. The current is “self limiting to approximately
300mA and, as noted in the text of this report the units remained functional following each run after cycling
power. Further a verification of full parametric performance was performed approximately 3-days following the
SEL testing, with all parts passing.
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RAD1419 SN 1, T=85C, LET=83, Run 6
300mA
Supply Current
+5V
-5V
200mA
Beam
On
Latch-Up
100mA
0mA
0
5
10
15
20
Time (Seconds)
Figure 5.11. Supply current versus time for the RAD1419 14-Bit ADC serial number 1. The unit was tested
with ±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the
onset of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to
SEL at an effective LET of approximately 83MeV-cm2/mg. The current is “self limiting to approximately
300mA and, as noted in the text of this report the units remained functional following each run after cycling
power. Further a verification of full parametric performance was performed approximately 3-days following the
SEL testing, with all parts passing.
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RAD1419 SN 1, T=85C, LET=83, Run 7
300mA
Supply Current
+5V
-5V
200mA
Beam
On
Latch-Up
100mA
0mA
0
5
10
15
20
25
Time (Seconds)
Figure 5.12. Supply current versus time for the RAD1419 14-Bit ADC serial number 2. The unit was tested
with ±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the
onset of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to
SEL at an effective LET of approximately 83MeV-cm2/mg. The current is “self limiting to approximately
300mA and, as noted in the text of this report the units remained functional following each run after cycling
power. Further a verification of full parametric performance was performed approximately 3-days following the
SEL testing, with all parts passing.
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RAD1419 SN 1, T=85C, LET=83, Run 8
300mA
Supply Current
+5V
-5V
200mA
Beam
On
100mA
Latch-Up
0mA
0
5
10
15
20
25
Time (Seconds)
Figure 5.13. Supply current versus time for the RAD1419 14-Bit ADC serial number 3. The unit was tested
with ±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the
onset of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to
SEL at an effective LET of approximately 83MeV-cm2/mg. The current is “self limiting to approximately
300mA and, as noted in the text of this report the units remained functional following each run after cycling
power. Further a verification of full parametric performance was performed approximately 3-days following the
SEL testing, with all parts passing.
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RAD1419 SN 1, T=85C, LET=83, Run 9
300mA
Supply Current
+5V
-5V
200mA
Beam
On
100mA
Latch-Up
0mA
0
5
10
Time (Seconds)
Figure 5.14. Supply current versus time for the RAD1419 14-Bit ADC serial number 4. The unit was tested
with ±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the
onset of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to
SEL at an effective LET of approximately 83MeV-cm2/mg. The current is “self limiting to approximately
300mA and, as noted in the text of this report the units remained functional following each run after cycling
power. Further a verification of full parametric performance was performed approximately 3-days following the
SEL testing, with all parts passing.
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RAD1419 SN 2, T=85C, LET=83, Run 23
+5V
-5V
Supply Current
300mA
200mA
Beam
On
100mA
Latch-Up
0mA
0
5
10
Time (Seconds)
Figure 5.15. Supply current versus time for the RAD1419 14-Bit ADC serial number 2. The unit was tested
with ±5.5V on the VS+ and VS- lines and at a case temperature of 85°C. The total fluence to the device at the
onset of SEL can be found in Table 5.1. The data in this figure shows that the units-under-test are susceptible to
SEL at an effective LET of approximately 83MeV-cm2/mg. The current is “self limiting to approximately
300mA and, as noted in the text of this report the units remained functional following each run after cycling
power. Further a verification of full parametric performance was performed approximately 3-days following the
SEL testing, with all parts passing.
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6.0. Summary/Conclusions
The single event latch-up testing described in this final report was performed at the Lawrence Berkeley
National Laboratories (LBNL) using the 88-Inch Cyclotron. The 88-Inch Cyclotron is operated by the
University of California for the US Department of Energy (DOE) and is a K=140 sector-focused
cyclotron with both light- and heavy-ion capabilities. Protons and other light-ions are available at high
intensities (10-20pμA) up to maximum energies of 55 MeV (protons), 65 MeV (deuterons), 135 MeV
(3He) and 140 MeV (4He). Most heavy ions through uranium can be accelerated to maximum energies,
which vary with the mass and charge state.
The RAD1419 14-Bit, 800ksps Sampling A/D Converter with Shutdown described in this final report
was irradiated using Kr and Xe with a split positive supply potential of 5.5V and at a maximum case
temperature of 85°C. The 10MeV/n beam was used to provide sufficient range in silicon while meeting
the maximum LET requirements of the program. The devices were irradiated to a minimum fluence of
1E7ion/cm2 for each run or until a latch-up event was detected. The flux varied somewhat during the
testing, but was consistently targeted to between 2E5ion/cm2-s and 5E5ion/cm2-s.
The RAD1419 14-Bit, 800ksps Sampling A/D Converter SEL test units-under-test did not exhibit latchup at any LETs of 55MeV-cm2/mg or lower. SEL events were recorded and characterized using LETs
from 58MeV-cm2/mg to 83MeV-cm2/mg. The SEL events were non-destructive and have a very low
limiting cross-section of <3E-06cm2/device. The SEL events were considered non-destructive by
verifying gross functionality at the beam facility and then by running a full parametric characterization
approximately 3-days later.
Using CREME96 we can calculate the SEL event rate for a “worst-case” geosynchronous orbit to
determine if these units are suitable for space flight applications. Based on the SEL characterization
data shown in this report and CREME96, the RAD1419 14-Bit ADC has a “worst-case” geosynchronous
SEL rate of <8E-08 events/device-day or an MTBF of 12.5-million days. An equivalent failure in time
(FIT) rate is approximately 3 failures/billion device-hours. Note that the overall reliability of space
flight electronics due to failure from random defects in the material is on the order of 10 to 100 FITs.
Therefore the probability of an SEL event is much lower than the probability of a random failure of the
components in the system. Also note that the code was run for a geosynchronous orbit. Running the
code at lower orbit altitudes will cause the FIT rate to drop substantially.
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Appendix A: Photograph of Sample Unit-Under-Test to Show Device Traceability
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Appendix B: SEL Bias Connections
Biased Samples:
FUNCTION
PIN NUMBER
BIAS CONNECTIONS DURING IRRADIATION
+AIN
-AIN
VREF
REFCOMP
AGND
D13 (MSB)
D12
D11
D10
D9
D8
D7
D6
DGND
D5
D4
D3
D2
D1
D0
SHDN/
RD/
CONVST/
CS/
BUSY/
VSS
DVDD
AVDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
+2.5V, 1000pF Ceramic to -AIN
GND
10μF Ceramic to GND
10μF Ceramic to GND
GND
Open
Open
Open
Open
Open
Open
Open
Open
GND
Open
Open
Open
Open
Open
Open
+5.5 V ± 0.15 V
GND
500 kHz Square Wave @ 5 % Duty Cycle
GND
Open
-5.5 V ± 0.15 V, 10μF Ceramic to GND
Pin 28
+5.5 V ± 0.15 V, 10μF Ceramic to GND
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Figure B.1. RAD1419 28-Pin Flat pack package drawing (for reference only).
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Appendix C: Post-SEL Electrical Test Parameters and Conditions
All electrical tests for this device are performed on one of Radiation Assured Device’s LTS2020 Test
Systems. The LTS2020 Test System is a programmable parametric tester that provides parameter
measurements for a variety of digital, analog and mixed signal products including voltage regulators,
voltage comparators, D to A and A to D converters. The LTS2020 Test System achieves accuracy and
sensitivity through the use of software self-calibration and an internal relay matrix with separate family
boards and custom personality adapter boards. The tester uses this relay matrix to connect the required
test circuits, select the appropriate voltage / current sources and establish the needed measurement loops
for all the tests performed. The measured parameters and test conditions are shown in Table C.1.
A listing of the measurement precision/resolution for each parameter is shown in Table C.2. The
precision/resolution values were obtained either from test data or from the DAC resolution of the LTS2020. To generate the precision/resolution shown in Table C.2, one of the units-under-test was tested
repetitively (a total of 10-times with re-insertion between tests) to obtain the average test value and
standard deviation. Using this test data MIL-HDBK-814 90/90 KTL statistics were applied to the
measured standard deviation to generate the final measurement range. This value encompasses the
precision/resolution of all aspects of the test system, including the LTS2020 mainframe, family board,
socket assembly and DUT board as well as insertion error. In some cases, the measurement resolution is
limited by the internal DACs, which results in a measured standard deviation of zero. In these instances
the precision/resolution will be reported back as the LSB of the DAC.
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Table C.1. Measured post-SEL parameters and test conditions for the RAD1419.
Parameter
Test Condition
Power Supply Current
Power Supply Current, Nap Mode
Power Supply Current, Sleep Mode
Power Supply Current
Power Supply Current, Nap Mode
Power Supply Current, Sleep Mode
VREF
VOL D0-D13
VOH D0-D13
VOH0p2MA_BUSY
IOZH D0-D13
IOZLVO D0-13
IIL CS
IIL RD
IIL SHDN
IIL CONVST
IIH CS
IIH RD
IIH SHDN
IIH CONVST
+Analog Input Leakage Current
-Analog Input Leakage Current
Bipolar Offset
Bipolar Gain (Full Scale) Error
Integral Linearity Error-Positive
Integral Linearity Error-Negative
Differential Linearity Error-Long
Differential Linearity Error-Short
SFDR
THD
SINAD
SHDN=VCC, CS=0
SHDN=0 CS=0
SHDN=0 CS=1
SHDN=1 CS=0
SHDN=0 CS=0
SHDN=0 CS=1
IOUT = 0
IOUT = 1.6mA
IOUT = –200μA
IOUT = –200μA
VOUT=5V, CS/ = High
VOUT=0V, CS/ = High
VIN=0V
VIN=0V
VIN=0V
VIN=0V
VIN=5V
VIN=5V
VIN=5V
VIN=5V
VIN=2.5V
VIN=-2.5V
VDD = 5V, VSS = – 5V
VDD = 5V, VSS = – 5V
VDD = 5V, VSS = – 5V
VDD = 5V, VSS = – 5V
VDD = 5V, VSS = – 5V
VDD = 5V, VSS = – 5V
100kHz Input Signal
100kHz Input Signal, First 5 Harmonics
100kHz Input Signal
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Table C.2. Measured post-SEL parameters, pre-irradiation specifications and measurement
resolution/precision for the RAD1419.
Parameter
Spec Min Spec Max
ICCSHDN=1CS=0
ICCSHDN=0CS=0
ICCSHDN=0CS=1
IEESHDN=1CS=0
IEESHDN=0CS=0
IEESHDN=0CS=1
VREF
VOL1p6MA_D0
VOL1p6MA_D1
VOL1p6MA_D2
VOL1p6MA_D3
VOL1p6MA_D4
VOL1p6MA_D5
VOL1p6MA_D6
VOL1p6MA_D7
VOL1p6MA_D8
VOL1p6MA_D9
VOL1p6MA_D10
VOL1p6MA_D11
VOL1p6MA_D12
VOL1p6MA_D13
VOH0p2MA_D0
VOH0p2MA_D1
VOH0p2MA_D2
VOH0p2MA_D3
VOH0p2MA_D4
VOH0p2MA_D5
VOH0p2MA_D6
VOH0p2MA_D7
VOH0p2MA_D8
VOH0p2MA_D9
VOH0p2MA_D10
VOH0p2MA_D11
VOH0p2MA_D12
VOH0p2MA_BUSY
2.00E-02
3.00E-03
3.00E-03
-3.00E-02
-5.00E-04
-1.00E-04
2.48E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
4.00E+00
2.52E+00
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
Precision
(stdev*2.065)
±6.14E-05
±8.71E-06
±1.07E-05
±5.40E-05
±8.26E-06
±1.81E-07
±9.67E-16
±1.63E-03
±1.46E-03
±1.75E-03
±1.63E-03
±1.17E-03
±1.63E-03
±1.39E-03
±1.52E-03
±1.17E-03
±1.52E-03
±1.52E-03
±1.31E-03
±1.17E-03
±1.52E-03
±4.27E-03
±3.99E-03
±4.35E-03
±3.99E-03
±3.99E-03
±3.48E-03
±4.27E-03
±3.48E-03
±3.48E-03
±4.27E-03
±2.61E-03
±1.00E-03
±1.00E-03
±1.00E-03
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VOH0p2MA_D13
IOZHVO=5V_D0
IOZHVO=5V_D1
IOZHVO=5V_D2
IOZHVO=5V_D3
IOZHVO=5V_D4
IOZHVO=5V_D5
IOZHVO=5V_D6
IOZHVO=5V_D7
IOZHVO=5V_D8
IOZHVO=5V_D9
IOZHVO=5V_D10
IOZHVO=5V_D11
IOZHVO=5V_D12
IOZHVO=5V_D13
IOZLVO=0V_D0
IOZLVO=0V_D1
IOZLVO=0V_D2
IOZLVO=0V_D3
IOZLVO=0V_D4
IOZLVO=0V_D5
IOZLVO=0V_D6
IOZLVO=0V_D7
IOZLVO=0V_D8
IOZLVO=0V_D9
IOZLVO=0V_D10
IOZLVO=0V_D11
IOZLVO=0V_D12
IOZLVO=0V_D13
IIL0V_CS
IIL0V_RD
IIL0V_SHDN
IIL0V_CONVST
IIH5V_CS
IIH5V_RD
IIH5V_SHDN
IIH5V_CONVST
IINp2p5VAIN
IINm2p5VAIN
BIPOLAROFFSET
BIPOLARGAINERROR
INT(p)NONmLIN
INT(m)NONmLIN
4.00E+00
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-05
-1.00E-06
-1.00E-06
-2.00E+01
-6.00E+01
-2.00E+00
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-05
1.00E-06
1.00E-06
2.00E+01
6.00E+01
2.00E+00
±3.48E-03
±2.95E-09
±5.22E-09
±3.54E-09
±3.52E-09
±3.92E-09
±4.89E-09
±4.87E-09
±5.08E-09
±6.06E-09
±5.78E-09
±3.65E-09
±5.06E-09
±4.27E-09
±4.91E-09
±3.48E-09
±4.89E-09
±3.89E-09
±3.43E-09
±4.27E-09
±3.26E-09
±3.57E-09
±2.27E-09
±2.58E-09
±3.43E-09
±3.40E-09
±2.39E-09
±2.83E-09
±3.65E-09
±3.48E-09
±2.76E-09
±3.38E-09
±1.63E-09
±1.63E-09
±2.93E-09
±1.44E-09
±3.62E-09
±4.65E-08
±4.15E-08
±1.65E-01
±2.43E-01
±1.79E-01
±1.34E-01
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CODEWIDTH(DNL)LONG
CODEWIDTH(DNL)SHORT
SFDR
THD
SINAD
1.00E+00
-5.00E+00
8.60E+01
2.50E+00
1.00E+00
-8.60E+01
7.80E+01
±2.04E-01
±9.99E-02
±3.96E+00
±4.10E-01
±1.14E-01
Appendix D: CREME96 Orbit Definition Output File
Created by CREME96:HI_UPSET_DRIVER Version 200 on 01-May-10 at 20:37:01
Input Integral LET Spectrum File: GEOSYNC.LET
Created by CREME96:LETSPEC_DRIVER Version 200 on 18-Dec-07 at 22:15:43
ZMIN = 1 ZMAX = 92 LETMIN = 1.00E+00 LETMAX = 1.10E+05 MeV-cm2/g LBINS = 1002
EMINCUT = 1.00E-01 MeV/nuc
TARGET MATERIAL = SILICON
Input File to LETSPEC_DRIVER: GEOSYNC.TFX
Created by CREME96:TRANSPORT_DRIVER Version 200 on 18-Dec-07 at 22:15:41
ZMIN = 1 ZMAX = 92 EMIN = 1.0000E-01 EMAX = 1.0000E+05 MeV/nuc MBINS = 1002
Thickness = 100.0000 mils ALUMINUM
Input File to TRANSPORT_DRIVER: GEOSYNC.FLX
Created by CREME96:FLUX_DRIVER Version 200 on 18-Dec-07 at 22:15:39
ZMIN = 1 ZMAX = 92
IMODE = 0 SOLAR-QUIET MODE: YEAR = 1977.0000
ITRANS = 0 GEOSYNCH/NEAR-EARTH INTERPLANETARY FLUXES
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