VLB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB40-12S is a common Emitter transistor, designed for VHF FM amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD A .112x45° FEATURES: E C B E B • PG = 13 dB min. at 40 W/50 MHz • Omnigold™ Metalization System ØC MAXIMUM RATINGS D H I J IC 1.0 A VCBO 36 V VCEO 18 V G #8-32 UNC-2A F VCES VEBO PDISS E 36 V 4.0 V 70 W @ TC = 25 °C DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 MAXIMUM TJ -65 °C to +200 °C H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 TSTG -65 °C to +150 °C J θJC 2.5 °C/W CHARACTERISTICS SYMBOL .750 / 19.05 ORDER CODE: ASI10735 TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 18 V BVCES IC = 200 mA 36 V BVCBO IC = 200 mA 36 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 12.5 V GP ηC VCC = 12.5 V IC = 200 mA 5.0 f = 1.0 MHz POUT = 40 W f = 50 MHz 13 mA --- --- 100 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 % REV. C 1/1