UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for PACKAGE STYLE .230 6L FLG FEATURES: A .040x45° • • • Omnigold™ Metalization System B C 2XØ.130 4X .025 R .115 .430 D E .125 F G H MAXIMUM RATINGS I IC 9.0 A VCBO 50 V 26 V VCEO 50 V VCES 4.0 V VEBO PDISS J K O 190 W @ TC = 25 C O O -65 C to +200 C TJ O MAXIMUM DIM MINIMUM inches / mm inches / mm A .355 / 9.02 .365 / 9.27 B .115 / 2.92 .125 / 3.18 C .075 / 1.91 .085 / 2.16 D .225 / 5.72 .235 / 5.97 E .090 / 2.29 .110 / 2.79 F .720 / 18.29 .730 / 18.54 G .970 / 24.64 .980 / 24.89 H .355 / 9.02 .365 / 9.27 I .004 / 0.10 .006 / 0.15 J .120 / 3.05 .130 / 3.30 K .160 / 4.06 .180 / 4.57 L .230 / 5.84 .260 / 6.60 O TSTG -65 C to +150 C θ JC 0.9 OC/W CHARACTERISTICS SYMBOL L ORDER CODE: ASI10672 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 50 V BVCES IC = 50 mA 50 V BVCEO IC = 50 mA 26 V BVEBO IE = 10 mA 3.0 V ICES VCE = 20 V 10 mA ICBO VCB = 30 V 5 mA hFE VCE = 5.0 V 100 --- Cob VCB = 24 V 75 pF PG ηC VCE = 24 V IC = 1.0 A 20 f = 1.0 MHz POUT = 60 W f = 900 GHz 7.5 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. A 1/1