ASI PT9732

PT9732
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9732 is a common
Emitter transistor, designed for
broadband amplifier operations in
military, commercial and amateur
communication equipment.
PACKAGE STYLE .380 4L FLG
FEATURES:
• PG = 12 dB min.
• POUT = 10 W
• 28 V, 175 MHz
• Omnigold™ Metalization System
B
.112 x 45°
A
E
C
Ø.125 NOM.
FULL R
J
.125
E
B
C
D
E
F
MAXIMUM RATINGS
I
GH
IC
1.25 A
VCES
65 V
DIM
MINIMUM
inches / mm
inches / mm
35 V
A
.220 / 5.59
.230 / 5.84
B
.785 / 19.94
VEBO
4.0 V
C
.720 / 18.29
.730 / 18.54
D
.970 / 24.64
.980 / 24.89
PDISS
20 W @ TC = 25 °C
VCEO
.385 / 9.78
E
-65 °C to +200 °C
TJ
F
.004 / 0.10
.006 / 0.15
G
.085 / 2.16
.105 / 2.67
H
.160 / 4.06
-65 °C to +150 °C
θJC
8.0 °C/W
CHARACTERISTICS
.240 / 6.10
J
.255 / 6.48
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.180 / 4.57
.280 / 7.11
I
TSTG
MAXIMUM
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 25 mA
35
V
BVCES
IC = 50 mA
60
V
BVEBO
IE = 1.0 mA
4.0
V
ICES
VCE = 25 V
hFE
VCE = 10 V
COB
VCB = 28 V
GP
η
PSAT
VCE = 28 V
IC = 500 mA
20
f = 1.0 MHz
PIN = 1.0 W
f = 150 MHz
12
1.0
mA
150
---
18
pF
---
dB
60
%
10
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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