PT9732 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9732 is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L FLG FEATURES: • PG = 12 dB min. • POUT = 10 W • 28 V, 175 MHz • Omnigold™ Metalization System B .112 x 45° A E C Ø.125 NOM. FULL R J .125 E B C D E F MAXIMUM RATINGS I GH IC 1.25 A VCES 65 V DIM MINIMUM inches / mm inches / mm 35 V A .220 / 5.59 .230 / 5.84 B .785 / 19.94 VEBO 4.0 V C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 PDISS 20 W @ TC = 25 °C VCEO .385 / 9.78 E -65 °C to +200 °C TJ F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 -65 °C to +150 °C θJC 8.0 °C/W CHARACTERISTICS .240 / 6.10 J .255 / 6.48 TC = 25 °C NONETEST CONDITIONS SYMBOL .180 / 4.57 .280 / 7.11 I TSTG MAXIMUM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 35 V BVCES IC = 50 mA 60 V BVEBO IE = 1.0 mA 4.0 V ICES VCE = 25 V hFE VCE = 10 V COB VCB = 28 V GP η PSAT VCE = 28 V IC = 500 mA 20 f = 1.0 MHz PIN = 1.0 W f = 150 MHz 12 1.0 mA 150 --- 18 pF --- dB 60 % 10 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1