BLW87 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW87 is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° • Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalization System A E C Ø.125 NOM. FULL R J .125 E B C D MAXIMUM RATINGS E F IC 4.0 A VCBO 36 V VCEO 18 V VEBO 4.0 V I GH PDISS 65 W @ TC = 25 °C TJ -65 °C to +200 °C MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 .385 / 9.78 E .280 / 7.11 I TSTG -65 °C to +150 °C θJC 3.5 °C/W CHARACTERISTICS J TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 18 V BVCES IC = 15 mA 36 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCE = 12.5 V IC = 250 mA 20 f = 1.0 MHz POUT = 25 W f = 175 MHz 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA --- --- 110 pF dB % REV. A 1/2 BLW87 ERROR! REFERENCE SOURCE NOT FOUND. IMPEDANCE DATA FREQ 160 MHz ZIN (Ω) 1.0 + j0.4 ZCL (Ω) 2.3 + j0.1 PIN = 3.0 W VCE = 12.5 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 2/2