MPSU56 pdf - New Jersey Semiconductor

<StmL-Conductor £A\oauc£i, Unc.
TELEPHONE: (201) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (201) 376-8960
MPS-U55 (SILICON)
MPS-U56
PNP SILICON
AMPLIFIER TRANSISTORS
PNP SILICON ANNULAR
AMPLIFIER TRANSISTORS
. . . designed for general-purpose, high-voltage ampl fier and driver
applications.
•
•
•
High Collector-Emitter Breakdown Voltage BVCEO = 60 Vdc <Min) @ lc = 1 .0 mAdc - MPS-U55
80 Vdc (Mini @ Ic = 1,0 mAdc - MPS-U56
High Power Dissipation - Prj = 1 0 W @ TC = 25°C
Complements to NPN MPS-U05 and MPS-U06
MAXIMUM RATINGS
Symbol
MPS-U55
MPS-U56
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TA - 25°C
Derate above 25°C
Rating
VCEO
VCB
60
80
60
SO
Vdc
Vdc
VEB
ic
PD
4.0
Vdc
2.0
Adc
1.0
8.0
Watt
mW/°C
Total Device Dissipation 9 TC • 25°C
Derate above. 25°C
PD
10
80
Watts
mW/°C
Tj.Tstg
-55 to 1 150
°C
Operating and Storage Junction
Temperature Range
0360
~ 0.375
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
"JC
12.5
Thermal Resistance, Junction to Ambient
«JA
125
°c/w
°c/w
Characteristic
1
— - 0.190
T
rail
Collector Connected
Quality S<=imi-Conrh.)rtor$
<Se.mi-C.onauck.oi iJ-ioducti, One,
TELEPHONE: (201) 376-2922
(212)227-6005
FAX; (201) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MPS-U55, MPS-U56 (continued)
ELECTRICAL CHARACTERISTICS <TA - 25°C unless otherwise noted)
Characteristic
Symbol
Unit
Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc- I.OmAdc, IB -01
Vdc
BVcEO
MPS-U55
MPS-U56
Emitter-Base Breakdown Voltage
(IE- 100»iAde, lc-0)
60
80
-
—
-
4.0
-
-
-
—
-
-
100
100
80
50
-
160
130
80
-
-
0.22
0.1S
0.5
-
vBE(on)
-
0.78
1.2
Vdc
«T
SO
100
-
MHz
Cob
"
10
15
pF
8VEBO
Collector Cutoff Current
(V CB -40Vdc, le -0)
(V C B -60Vdc, IE -01
Vdc
nAdc
ICBO
MPS-U5S
MPS-U56
ON CHARACTERISTICS
DC Current Gain ( 1 )
dc " 50 mAdc, VCE • '-0 Vdc)
Uc • 250 mAdc, VCE • 1-0 Vdc)
( 1 C • 500 mAdc, VCE " 1 -0 Vdc)
-
"FE
Collector-Emitter Saturation Voltage! 1)
(1C * 250 mAdc, IB - 10 mAdc)
dC " 250 mAdc, IB - 25 mAdc)
Vdc
VcE(sat)
Base-Emitter On Voltage 11)
(1C • 250 mAdc, VCE " 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain— Bandwidth Product
dC - 200 mAdc. VCE " 5.0 Vdc, f - 100 MHz)
Output Capacitance
<VCB • 10 vdc- IE • ". * • 100 kHz)
(l)Pulu Test: Pulu Width £300 I". Duty Cycle
FIGURE 1 - DC CURRENT GAIN
-•v c
FIGURE 2 - "ON" VOLTAGES
11
j • li' e"
•
"S N
"
\
10
10
2.0
50
1C. COLLECTOR CURRENT (mA)
20
10
20
SO
100
200
50
5QO
LC, COLLECTOR CURRENT (mA)
FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT
FIGURE 3 - DC SAFE OPERATING AREA
ss
B
1.0
fc
:
I OS
^r
Tj -
01
n-
-
cond Bfiikdown imnttf
80ndirwjWwt Limn id
ThKirnl Limitmon 9 Tc • 25'C
AHifilmbli To BVCE0
001
• 10
20
1
SO
10
20
q
s- ^5"
SO
\
*?
V
MP
MPSU5
V
i* 100
\s
HH-T-H
J
X
I
s
1M"C
02
"•• \
S
1(00
s
vr f S O V d c
S
.
>
7
JM5°C
t
5
0
ID
1 <)
S0
00
2
»
so
Vet, COLLECTOR EMITTER VOLTAGE (VOLTS)
There ere two limitation! on the power handling ability of a
transinor: junction temperature and secondary breakdown. Safe
operating area curves indicate Ic - VCE limits of the tramittor that
must be observed for reliable operation: i.e.. the transistor must
not be subjected to greater dissipation than the curves indicate.
Ouaiitv S
The data of Figure 3 is bawd on Tj(p|(| - 150°C. TC is variable
depending on conditions. At high caw temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations impend by secondary breakdown
100
20