<~5e.ml-Con.auctoi :.Pi.oa.u.c.t\, Line.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 1N2620, A, B (SILICON) thru iN2624, A, B Temperature-compensated zcncr reference diodes utilizing an oxide-passivated junction for long-term voltage stability. Construction consists of welded hermetically sealed metal and glass case. MAXIMUM RATINGS CASE 52 Junction Temperature: -55to+175°C (DO-13) Storage Temperature: -65 to H75°C © DC Power Dissipation: 750 rnW 5> TA - 25°C MECHANICAL CHARACTERISTICS CASE: Hermetically sealed, welded metal and glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable and weldable. POLARITY: Cathode to case WEIGHT: 1.5 Grams (approx) MOUNTING POSITION: Any ELECTRICAL CHARACTERISTICS tr A =-?5*c unless oiiwrwisc i>oi«o ,H;:DEC Type No. M:ixiii]titn V.ilUlne Chiin^c ^Vy (Vulls) Ambient Test Temperature "C ±1°C (N.ito 1) 'I'fMiipciMluri 1 Crn-Mit ii'iil ','/ C (Null- 1) Maximum Dyiuunii: IHI|)i>d.tlKC / / T (Ohms) (N.ite 2) V^ - D,3 V tS.O'i* i J I,.-. = 10 inA /J i 1N2G20 0,070 0.01 1N2021 0.035 0. 005 1N2G22 0. OM 1N2G23 0.007 0.001 1N2G2<! 0.003 0. 0005 1N2020A 0. t'l'l 1N2G21A 0.072 1N2G22A 0. 02'J 1N2023A 0. OH t). 001 1N2G2'1A 0.007 0.000!i 1N2IJ20B 0. 1»1 0.01 1N2621I3 0. 095 0. 005 1N2622H 0. 031) IN2G23U 0. 019 0.001 1N2G24D 0.010 0.0005 0, i25, ,75 15 0. 01 -.If), 0, i2S, i •TiiihliM'-tolcrance units .uMilalilr mi spot'i.il ri'i CAPACITANCE (C) - 75 to 200 pF M 90',' i>[ V z Quality Semi-Conductors 0.002 i15, .100 -55 0 i2T>, iTfi, i t O O , . I S O 0.005 0. 002 0. 002 15 15