. <z~>£.mi-(-on.auctoi iJ-* redacts., One. *_/ TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF530 IRF531 IRF532 IRF533 N-C HAIMNEL ENHANCE VIENT-MODE SILICON GATE TWOS POWER FIEL D EFFECT TRANSISTOR The se TMOS Power FETs ar e designed for low voltage, high speed power switching applical ions such as switching regulators, conve rters, solenoid and relay drivers, • Silk on Gate for Fast Switch! ng Speeds • Rugged — SOA is Power Dis sipation Limited • Source-to-Drain Diode Chara cterized for Use With Inductive Loa ds Part Number IRF530 Vrjs 100V 'DSIon ) 0.18 f IRF531 IRF532 60V 100 V 0.18 n 0,25 fl 14 A IRF533 60 V 0.25 fl 12 A LD 14 A 12 A S TMOS B L I i MAXIMUM RATINGS rfl IRF Ruing Drain-Source Voltage Drain-Gate Voltage (HGS = 1.0 M(l) Gate-Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100'C Drain Current — Pulsed Total Power Dissipation @ TC - 25'C Derate above 25'C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temp, for Soldering Purposes, 1/8* from case for 5 seconds Symbol 530 531 532 633 Unit VDSS 10° 6° 10° 60 Vdc VDGR 100 eo 100 eo vdc f— /— F ^^ TT—r tr^» t ^_J »r •- ±20 L-M 14 14 12 12 Adc ID 9.0 9.0 8.0 8.0 Adc IDM 56 56 48 48 PD Tj.Tstg *— R — J - -. n SHUi. 75 0.6 W/°C -55 to 160 'C •c/w 1-67 TL 300 mi.GAH IBM tniM[ iOUM Adc Watts R«JC R0JA S Q— vdc ID |(— K ., VQS ~5D SS.T ^— —-H< LEAD Mf GUUMfS AXE AUOMDL DM SM the MTM12N10 Designer's Data Sheet for a complete set of design curves for this product. UN o IM 0 t4j iM _J096_ H 3Q JO _!1!0 it i n \tn awa H _g °C matt UAX UAX _i_ .!«U.B_JJB_ t« C fl? <« in ai« I 62'5 (iKUHETtW MM "T* u Ll IS en aim IB OW5 OOK OIJ4 flJM OKI OOM Si. _1S a.190 ;M^ _IM_ oieg, a:i3 a'n^ »» ~MJ~ ons oo t;> aaoa »a» uu ^_ Ifl* -.J_wd TO-220AB NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors ELECTRICAL CHARACTERISTICS (Tc - 25"C unless otherwise noted) Symbol Characteristic | Mln | Typ Unit Off CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = o, ID = 260 ^A) IRFBSO.BSZ VIBRJDSS - - - - 0.26 1.0 IGSSF — — 100 nAdc 'GSSR — — -100 nAdc VQS(th) 2.0 — 4.0 Vdc 14 12 - - - - 0.18 0.25 9FS 4.0 — — mhos PF IRF531.533 Zero Gate Voltage Drain Current <VGs = 0 V, VDS = Rated VDSs) (VQS = o v. VDS = O.B Ra'«d VDSS. Vdo 100 60 IDSS TC - wci Forward Gate-Body Leakage Current (VQS - 20 v, VDS - <M Reverse Gate-Body Leakage Current (vGs = -2ov, VDS •= 01 mAdc ON CHARACTERISTICS1 Gate Threshold Voltage (vDs = VGS. ID - 250 ^A) On-State Drain Current (VDS - 26 v, VQS - 1° v) iRFeso.Bsi 1RF532.533 Static Drain-Source On-Resistance (VGS = 1° V. 'D = 8.0 A) Adc 'Dion) Ohm rOS(on) IRF530,531 IRF 532,633 Forward Trensconductance (VDS - 15 v, ID = 8.0 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 v, VGS - o, f = 1.0 MHZ) Reverse Transfer Capacitance Ciss — — 800 GOSS — — 500 Crss - — 160 >d(on) — — 30 »r — — 76 'd(off) — — 40 'f - - 45 SWITCHING CHARACTERISTICS' |Tj = 100°C) Turn-On Delay Time VDD - 36 v, ID = e.o A Z0 = 15 n Rise Time Turn-Off Delay Time Fall Time ns SOURCE DRAIN DIODE CHARACTERISTICS' Characteristic Symbol Typ Unit VSD 2.3 Vdc Forward On-Voltage Forward Turn-On Time (Is = Rated ID, VQS = 0) Limited by stray Inductance ton Reverse Recovery Time trr 360 ns Unit INTERNAL PACKAGE INDUCTANCE (TO-220) Symbol Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25* from package to center of die) Ld Internal Source Inductance (Measured from the source lead 0.25" from package to source bond pad.) LS Mln Typ Max - 3.6 4.5 - — 7.6 — nH •Pults Test: Pulse Width a 300 ia, Duty Cycle s 2.0 %. FIGURE 1 — SWITCHING TEST CIRCUIT VDD FIGURE 2 — SWITCHING WAVEFORMS