HIGH-POWER GaAlAs IR EMITTERS GLASS DOME ANODE (CASE) .015 .183 .152 .186 .156 FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Medium emission angle for best coverage/power density .209 .220 .100 .041 .024 .043 .036 CATHODE .143 .150 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. 20 .017 13 1.00 MIN. OD-880L 45° PARAMETERS MB E ELECTRO-OPTICAL CHARACTERISTICS AT 25°C TEST CONDITIONS Total Power Output, Po IF = 100mA MIN TYP 18 20 mW 50 mW/sr 880 nm 80 nm CE Radiant Intensity, Ie R RoHS Peak Emission Wavelength, λP IF = 50mA Spectral Bandwidth at 50%, Δλ DE Half Intensity Beam Angle, θ IF = 100mA Forward Voltage, VF Reverse Breakdown Voltage, VR IR = 10μA 35 1.55 5 30 VR = 0V Capacitance, C FE Rise Time Fall Time MAX UNITS Deg 1.9 Volts Volts 17 pF 0.5 μsec 0.5 μsec Power Dissipation1 LI ABSOLUTE MAXIMUM RATINGS AT 25°C CASE 190mW Continuous Forward Current OF 100mA Peak Forward Current (10μs, 400Hz)2 3A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature -55°C TO 100°C 100°C Thermal Resistance, RTHJA1 400°C/W Typical Thermal Resistance, RTHJA2 135°C/W Typical 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 HIGH-POWER GaAlAs IR EMITTERS 10 PEAK FORWARD CURRENT, Ip (amps) POWER DISSIPATION (mW) INFINITE HEAT SINK 160 140 NO HEAT SINK 120 100 80 60 40 20 100 25 50 75 AMBIENT TEMPERATURE (°C) t = 10μs t = 500μs 100 Ip T 80 70 TCASE = 25°C NO PRE BURN-IN PERFORMED 104 RELATIVE POWER OUTPUT FE LI FORWARD CURRENT, IF (amps) 1 100 40 20 –40 –30 –20 –10 0 10 20 BEAM ANGLE, θ(deg) 30 40 50 POWER OUTPUT vs TEMPERATURE FORWARD I-V CHARACTERISTICS 2 10 60 0 –50 105 DE 103 STRESS TIME, (hrs) 80 CE IF = 100mA 50 3 1 DUTY CYCLE, D (%) MB E IF = 50mA 4 t T RADIATION PATTERN 90 102 0.1 100 IF = 20mA 101 D= t 0.1 DEGRADATION CURVE 60 t = 100μs 1 0.01 0.01 RELATIVE POWER OUTPUT (%) 0 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 180 MAXIMUM PEAK PULSE CURRENT 20 13 THERMAL DERATING CURVE R 200 OD-880L 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 OF 0.6 0.5 –50 0 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT SPECTRAL OUTPUT 1,000 EN D 100 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) –25 60 40 100 10 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 DC PULSE 10μs, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013