SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES ANODE (CASE) .157 .169 .100 .018 .324 .246 .332 .254 • • • • • .357 .362 .200 .031 Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches 20 13 GLASS .012 HIGH MAX OD-50W All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. CATHODE .025 .040 45° .500 PARAMETERS MB E ELECTRO-OPTICAL CHARACTERISTICS AT 25°C TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA Total Power Output, Po Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Forward Voltage, VF IF = 50mA DE Half Intensity Beam Angle, θ MIN 60 CE Radiant Intensity, Ie R RoHS Capacitance, C IR = 10μA 5 FE Fall Time UNITS mW 60 mW/sr nm 80 nm 110 Deg 30 VR = 0V Rise Time MAX 880 1.65 IF = 500mA Reverse Breakdown Voltage, VR TYP 75 1000 2 Volts Volts 90 pF 0.7 μsec 0.7 μsec Power Dissipation1 LI ABSOLUTE MAXIMUM RATINGS AT 25°C CASE 1000mW Continuous Forward Current OF 500mA Peak Forward Current (10μs, 400Hz)2 10A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -55°C to 100°C Maximum Junction Temperature 100°C Thermal Resistance, RTHJA1 145°C/W Typical Thermal Resistance, RTHJA2 75°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 SUPER HIGH-POWER GaAlAs IR EMITTERS 100 INFINITE HEAT SINK 700 600 500 NO HEAT SINK 400 300 100 0 100 25 50 75 AMBIENT TEMPERATURE (°C) t = 100μs 1 t D= T 0.1 1 DUTY CYCLE, D (%) IF = 150mA 80 IF = 250mA 70 IF = 450mA 103 STRESS TIME, (hrs) 104 60 40 20 0 –100 –80 105 DE 102 FE 8 RELATIVE POWER OUTPUT FORWARD I-V CHARACTERISTICS 10 LI 6 4 2 100 80 CE TCASE = 25°C NO PRE BURN-IN PERFORMED 101 10 RADIATION PATTERN 100 60 t T Ip DEGRADATION CURVE 50 FORWARD CURRENT, IF (amps) t = 50μs 0.1 0.01 100 90 12 t = 10μs 10 MB ER POWER DISSIPATION (mW) 800 200 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 900 13 PEAK FORWARD CURRENT, Ip (amps) 1,000 MAXIMUM PEAK PULSE CURRENT 20 THERMAL DERATING CURVE RELATIVE POWER OUTPUT (%) 1,100 OD-50W –60 –40 –20 0 20 40 BEAM ANGLE, θ(deg) 60 80 100 POWER OUTPUT vs TEMPERATURE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 OF 0.6 0.5 –50 0 0 2 4 6 FORWARD VOLTAGE, VF (volts) 8 10 SPECTRAL OUTPUT 75 100 POWER OUTPUT vs FORWARD CURRENT D 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) 0 25 50 AMBIENT TEMPERATURE (°C) 1,000 100 EN –25 60 40 100 10 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 DC PULSE 10μs, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013