PHOTODIODE 20 ELEMENT AXUV20ELG Dimensions are in inch [metric] units. FEATURES • 22 pin dual in-line package • Ideal for electron detection • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (Per Element) PARAMETERS TEST CONDITIONS Active Area MIN 0.75mm x 4.1mm Responsivity, R TYP MAX UNITS mm2 3 A/W (see graphs on next page) Reverse Breakdown Voltage, VR IR = 1µA Capacitance, C VR = 0V 40 pF Rise Time VR = 0V 200 nsec Shunt Resistance (per element) Vf = ±10mV Volts 25 100 MOhms THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient1 -10° TO 40°C1 Nitrogen or Vacuum -20°C TO 80°C 70°C Maximum Junction Temperature Lead Soldering Temperature 2 260°C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised. 2 0.080" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 PHOTODIODE 20 ELEMENT RESPONSIVITY (A/W) 0.30 AXUV20ELG ELECTRON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) RESPONSIVITY (A/W) 0.30 EUV-UV PHOTON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 0 RESPONSIVITY (A/W) 0.5 50 100 150 WAVELENGTH (nm) 200 250 UV-VIS-NIR PHOTON RESPONSIVITY 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013