PHOTODIODE 0.0008 mm2 AXUVHS6 FEATURES • • • • SMA connector Ideal for electron detection 100% internal QE Ultra high speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R TEST CONDITIONS MIN TYP (see graphs on next page) 55 IR = 1µA Capacitance, C VR = 50V 1 VR = 52V, RL = 50Ω 50 VR = 52V 0.5 Dark Current UNITS mm2 0.0008 0.029mm x 0.029mm Reverse Breakdown Voltage, VR Rise Time MAX Volts 3 pF psec 10 nA THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient2 Nitrogen or Vacuum Maximum Junction Temperature -10° TO 40°C1 -20°C TO 80°C 70°C 1 0.08" from case for 10 seconds. Temperatures exceeding these parameters may create Oxide growth on the active area. Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised. 2 Tighten to maximum torque of 5 inch/pounds. Permament damage will result if higher torque values are used and warranty is voided. 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision June 23, 2013 PHOTODIODE 0.0008 mm2 RESPONSIVITY (A/W) 0.30 AXUVHS6 ELECTRON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) RESPONSIVITY (A/W) 0.30 EUV-UV PHOTON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 0 RESPONSIVITY (A/W) 0.5 50 100 150 WAVELENGTH (nm) 200 250 UV-VIS-NIR PHOTON RESPONSIVITY 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision June 23, 2013