PHOTODIODE 63 mm2 AXUV63HS1-CH

PHOTODIODE 63 mm2
AXUV63HS1-CH
FEATURES
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Circular active area
Ideal for electron detection
100% internal QE
High speed
Hole in center of detector
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
Responsivity, R
TEST CONDITIONS
MIN
TYP
MAX
mm2
63
Ø9mm
UNITS
A/W
(see graphs on next page)
160
Reverse Breakdown Voltage, VR
IR = 1µA
Capacitance, C
VR = 0V
10
nF
VR = 150V, RL = 50Ω
2
nsec
VR = 150V
100
nA
Rise Time
Dark Current
Volts
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient2
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature1
-10° TO 40°C
-20°C TO 80°C
70°C
260°C
1
0.08" from case for 10 seconds.
Temperatures exceeding these parameters may create Oxide growth on the active area.
Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised.
2
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision June 23, 2013
PHOTODIODE 63 mm2
RESPONSIVITY (A/W)
0.30
AXUV63HS1-CH
ELECTRON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
100
1000
10,000
100,000
ENERGY (ev)
RESPONSIVITY (A/W)
0.30
EUV-UV PHOTON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
0
RESPONSIVITY (A/W)
0.5
50
100
150
WAVELENGTH (nm)
200
250
UV-VIS-NIR PHOTON RESPONSIVITY
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision June 23, 2013